公开(公告)号：US20070096171A1

公开(公告)日：2007-05-03

申请号：US11261484

申请日：2005-10-31

Applicant: Ching-Fuh Lin ,  Chu-Ting Huang ,  Shu-Chia Hsu ,  Kung-An Lin ,  Eih-Zhe Liang

Inventor： Ching-Fuh Lin ,  Chu-Ting Huang ,  Shu-Chia Hsu ,  Kung-An Lin ,  Eih-Zhe Liang

IPC: H01S5/00 ,  H01L29/76 ,  H01L21/8234

CPC classification number: H01S5/30 ,  H01S5/3009 ,  H01S5/3031

Abstract: A semiconductor laser device that has the effect of phonon-assisted light amplification and a method for manufacturing the same are proposed. A conductive layer is formed on a semiconductor silicon substrate. A current flow is used to accomplish electro-luminescence of silicon. A silicon dioxide nanometer particle layer is sandwiched between the conductive layer and the semiconductor silicon substrate to form a MOS junction for carrier confinement. The phonon-assisted light emission mechanism can thus be strengthened to enhance the electro-luminescence efficiency of silicon so as to accomplish the lasing effect.

Abstract translation: 提出了具有声子辅助光放大效果的半导体激光器件及其制造方法。 导电层形成在半导体硅衬底上。 电流用于实现硅的电致发光。 二氧化硅纳米颗粒层夹在导电层和半导体硅衬底之间以形成用于载流子限制的MOS结。 因此可以加强声子辅助发光机制，以提高硅的电致发光效率，从而实现激光效应。