公开(公告)号：US07903322B2

公开(公告)日：2011-03-08

申请号：US12551544

申请日：2009-08-31

Applicant: Wei-Chia Fang ,  Chun-Hung Chu ,  Chih-Jen Hu

Inventor： Wei-Chia Fang ,  Chun-Hung Chu ,  Chih-Jen Hu

IPC: G02B26/00 ,  G02F1/1339

CPC classification number: G02F1/167 ,  G02F1/1341 ,  G02F2001/1672

Abstract: An electro-phoretic display film includes a conductive layer, a dielectric layer disposed on the conductive layer, a plurality of electro-phoretic display media, and a sealing material. The dielectric layer has a plurality of micro-cups arranged in an array and a trench surrounding the micro-cups. The electro-phoretic display media are exclusively disposed within the micro-cups, and the sealing material is exclusively disposed within the trench.

Abstract translation: 电泳显示膜包括导电层，设置在导电层上的电介质层，多个电泳显示介质和密封材料。 电介质层具有排列成阵列的多个微杯和围绕微杯的沟槽。 电泳显示介质专门设置在微型杯内，密封材料专门设置在沟槽内。

公开(公告)号：US06800510B2

公开(公告)日：2004-10-05

申请号：US10289470

申请日：2002-11-06

Applicant: Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

Inventor： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

IPC: H01L2100

CPC classification number: H01L27/1248 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/42384

Abstract: A method of controlling the capacitance of the TFT-LCD storage capacitor is provided. The gate dielectric layer of the TFT is composed of a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when a doped and an undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled; thereby the capacitance of the storage capacitor can be controlled.

Abstract translation: 提供了一种控制TFT-LCD存储电容器的电容的方法。 TFT的栅介质层由氮化硅层，电介质层和氮化硅层组成，非晶硅层在电介质层上的蚀刻选择性不小于约5.0。 因此，当蚀刻掺杂的和未掺杂的非晶硅层以形成源极/漏极堆叠层时或者蚀刻导电层以在栅极介电层上形成栅极时，介电层可以是蚀刻停止层。 因此，可以控制介电层厚度; 从而可以控制存储电容器的电容。

公开(公告)号：US20110285617A1

公开(公告)日：2011-11-24

申请号：US12904472

申请日：2010-10-14

Applicant: Sheng-Wen Huang ,  Chun-Hung Chu ,  Chih-Jen Hu

Inventor： Sheng-Wen Huang ,  Chun-Hung Chu ,  Chih-Jen Hu

IPC: G09G3/34

CPC classification number: G02F1/167 ,  G02F1/13624

Abstract: A pixel structure is formed in a pixel area and coupled to a scan line and a data line. The pixel structure includes a first transistor, a second transistor and a pixel electrode. The first transistor is formed in the pixel area and coupled to the scan line and the data line. The second transistor is formed in the pixel area and coupled to the first transistor. The pixel electrode is formed in the pixel area and coupled to the second transistor. The pixel electrode includes a main portion and a first branch portion. The first branch portion is disposed between the first transistor and the second transistor. An electrophoretic display including the pixel structure is also disclosed herein.

Abstract translation: 像素结构形成在像素区域中并耦合到扫描线和数据线。 像素结构包括第一晶体管，第二晶体管和像素电极。 第一晶体管形成在像素区域中并耦合到扫描线和数据线。 第二晶体管形成在像素区域中并耦合到第一晶体管。 像素电极形成在像素区域中并耦合到第二晶体管。 像素电极包括主要部分和第一分支部分。 第一分支部分设置在第一晶体管和第二晶体管之间。 本文还公开了包括像素结构的电泳显示器。

公开(公告)号：US07631983B2

公开(公告)日：2009-12-15

申请号：US11437355

申请日：2006-05-19

Applicant: Chun-Hung Chu ,  Wei-Chueh Liao ,  Hui-Yun Hsu ,  Chia-Hsiang Chiu

Inventor： Chun-Hung Chu ,  Wei-Chueh Liao ,  Hui-Yun Hsu ,  Chia-Hsiang Chiu

IPC: F21V33/00

CPC classification number: H01R13/72 ,  A45C11/00 ,  H01R31/065 ,  Y10S362/80

Abstract: An all-in-one adapter container. The all-in-one adapter container comprises a space, a cover covering the space, at least one power line, a printed circuit board (PCB) and at least one line-arranging mechanism. The line-arranging mechanism provides arrangement for the power line. The printed circuit board is electrically connected to the power line.

Abstract translation: 一体式适配器容器。 一体式适配器容器包括空间，覆盖空间的盖，至少一个电力线，印刷电路板（PCB）和至少一个线排列机构。 线路排列机构提供电力线路的布置。 印刷电路板电连接到电源线。

公开(公告)号：US07087469B2

公开(公告)日：2006-08-08

申请号：US10934242

申请日：2004-09-03

Applicant: Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

Inventor： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

IPC: H01L21/00

CPC classification number: H01L27/1248 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/42384

Abstract: A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming a silicon island and a bottom electrode on the transparent substrate, the silicon island having an undoped region located on the central portion, and two doped regions respectively located on both sides, ii) forming a first silicon nitride layer on the transparent substrate, and iii) forming a stacked layer comprising a second silicon nitride layer and a conductive layer on the undoped region of the silicon island, and the first conductive layer of the stacked layer serving as a gate of a thin film transistor, wherein an etching selectivity ratio of the conductive layer over the dielectric layer is not less than about 5.0.

Abstract translation: 公开了一种控制薄膜晶体管液晶显示器（TFT-LCD）存储电容器的电容的方法。 在某些实施例中，该方法包括：i）在透明基底上形成硅岛和底部电极，硅岛具有位于中心部分上的未掺杂区域，以及分别位于两侧的两个掺杂区域，ii）形成第一 氮化硅层，以及iii）在所述硅岛的未掺杂区域上形成包括第二氮化硅层和导电层的堆叠层，并且所述层叠层的第一导电层用作薄的栅极 薄膜晶体管，其中导电层在电介质层上的蚀刻选择率不小于约5.0。

公开(公告)号：US07681827B2

公开(公告)日：2010-03-23

申请号：US11437347

申请日：2006-05-19

Applicant: Chia-Hsiang Chiu ,  Wei-Chueh Liao ,  Chun-Hung Chu ,  Fu-Ping Lin

Inventor： Chia-Hsiang Chiu ,  Wei-Chueh Liao ,  Chun-Hung Chu ,  Fu-Ping Lin

IPC: B65H27/00

CPC classification number: B65H75/406 ,  B65H75/4402

Abstract: An arranging-line mechanism comprises a cam, an axle connecting to the cam, a sliding element and a transmitting mechanism to drive the cam and the axle. The cam comprises an inclined surface and the sliding element to slide thereon. When the axle revolves, the transmitting mechanism drives the cam to revolve. A power line is wound regularly via the sliding element to slide on the inclined surface.

Abstract translation: 布置线机构包括凸轮，连接到凸轮的轴，滑动元件和用于驱动凸轮和轴的传动机构。 凸轮包括倾斜表面和滑动元件以在其上滑动。 当轴旋转时，传动机构驱动凸轮旋转。 电力线通过滑动元件规则地卷绕，以在倾斜表面上滑动。

公开(公告)号：US06953715B2

公开(公告)日：2005-10-11

申请号：US10934014

申请日：2004-09-03

Applicant: Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

Inventor： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

IPC: G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/423 ,  H01L21/00

CPC classification number: H01L27/1248 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/42384

Abstract: A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming an undoped amorphous silicon layer on a silicon nitride layer, ii) forming an etching mask on the undoped amorphous silicon layer, and iii) forming two doped amorphous silicon layers on portion of the undoped amorphous silicon layer and the etching mask, the two doped amorphous silicon layers being spaced apart and located on either side of the gate, wherein an etching selectivity ratio of the undpoed and doped amorphous silicon layers over the dielectric layer being not less than about 5.0.

公开(公告)号：US20110013257A1

公开(公告)日：2011-01-20

申请号：US12551544

申请日：2009-08-31

Applicant: Wei-Chia Fang ,  Chun-Hung Chu ,  Chih-Jen Hu

Inventor： Wei-Chia Fang ,  Chun-Hung Chu ,  Chih-Jen Hu

IPC: G02F1/167 ,  H01J9/20

CPC classification number: G02F1/167 ,  G02F1/1341 ,  G02F2001/1672

Abstract: An electro-phoretic display film includes a conductive layer, a dielectric layer disposed on the conductive layer, a plurality of electro-phoretic display media, and a sealing material. The dielectric layer has a plurality of micro-cups arranged in an array and a trench surrounding the micro-cups. The electro-phoretic display media are exclusively disposed within the micro-cups, and the sealing material is exclusively disposed within the trench.

Abstract translation: 电泳显示膜包括导电层，设置在导电层上的电介质层，多个电泳显示介质和密封材料。 电介质层具有排列成阵列的多个微杯和围绕微杯的沟槽。 电泳显示介质专门设置在微型杯内，密封材料专门设置在沟槽内。

公开(公告)号：US20090124911A1

公开(公告)日：2009-05-14

申请号：US12007501

申请日：2008-01-11

Applicant: Chia Chien Lin ,  Chun-Hung Chu ,  Su-Chen Cheng

Inventor： Chia Chien Lin ,  Chun-Hung Chu ,  Su-Chen Cheng

IPC: A61B5/022

CPC classification number: A61B5/022 ,  A61B5/681 ,  A61B5/742

Abstract: A sphygmomanometer capable of adjusting a viewing angle of a display screen includes a housing, and the housing includes a lower casing and an upper casing. The lower casing includes a pivotal axle and a position limit mechanism. The upper casing has a containing space for containing a rotating body, and a display screen installed on a side of the rotating body, and a shaft protruded from another side of the rotating body which faces the lower casing. The shaft is sheathed onto the pivotal axle for the use of the sphygmomanometer. When the sphygmomanometer is worn onto a user's wrist or arm, the pivotal axle and the shaft are operated to turn the display screen on the rotating body to an appropriate position, so as to facilitate the user or medical professionals to view the reading of the measurement on the display screen.

Abstract translation: 能够调节显示屏的视角的血压计包括壳体，并且壳体包括下壳体和上壳体。 下壳体包括枢转轴和位置限制机构。 上壳体具有用于容纳旋转体的容纳空间和安装在旋转体侧的显示屏以及从旋转体的面向下壳体的另一侧突出的轴。 轴被套在枢轴上用于血压计。 当血压计佩戴在用户的手腕或手臂上时，枢轴和轴被操作以将旋转体上的显示屏转动到适当的位置，以便于用户或医疗专业人员观察测量的读数 在显示屏上。

公开(公告)号：US07145172B2

公开(公告)日：2006-12-05

申请号：US10932828

申请日：2004-09-02

Applicant: Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

Inventor： Chih-Yu Peng ,  Wei-Chuan Lin ,  Chian-Chih Hsiao ,  Ta-Ko Chuang ,  Chun-Hung Chu ,  Chih-Lung Lin ,  Chin-Mao Lin

IPC: H01L31/0376 ,  H01L21/00

CPC classification number: H01L27/1248 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/42384

Abstract: A thin film transistor array substrate of a thin film transistor liquid crystal display (TFT-LCD) is provided. The gate dielectric layer of the TFT includes a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when doped and undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled, and thereby the capacitance of the storage capacitor can be controlled.

Abstract translation: 提供薄膜晶体管液晶显示器（TFT-LCD）的薄膜晶体管阵列基板。 TFT的栅介质层包括氮化硅层，电介质层和氮化硅层，并且非晶硅层在电介质层上的蚀刻选择性不小于约5.0。 因此，当掺杂和非掺杂非晶硅层被蚀刻以形成源极/漏极堆叠层时，介电层可以是蚀刻停止层，或蚀刻导电层以在栅极介电层上形成栅极。 因此，可以控制介电层厚度，从而可以控制存储电容器的电容。