公开(公告)号：US20070243708A1

公开(公告)日：2007-10-18

申请号：US11402675

申请日：2006-04-12

Applicant: Jens Hahn ,  Tom Richter ,  Detlef Weber ,  Chung-Hsin Lin

Inventor： Jens Hahn ,  Tom Richter ,  Detlef Weber ,  Chung-Hsin Lin

IPC: H01L21/4763 ,  H01L21/44

CPC classification number: C23C14/046 ,  H01L21/2855 ,  H01L21/76882

Abstract: The present invention provides a manufacturing method for an integrated semiconductor contact structure having an improved Aluminum fill comprising the steps of: forming contact holes in an insulation layer provided on a wafer, said contact holes having a respective bottom and respective sidewalls, said bottoms including a respective conductive area; introducing said wafer into a first PVD deposition chamber, said first PVD deposition chamber including a wafer bias means; and cold depositing a first Aluminum layer on the wafer in said first PVD deposition chamber, said first Aluminum layer covering said bottoms and said sidewalls of said contact holes and forming a seed layer; wherein during said step of cold depositing said first Aluminum layer on the wafer in said first PVD deposition chamber said wafer bias means is set to a bias in the range between 20 W and 700 W or −50 V to −800 V.

Abstract translation: 本发明提供一种具有改进的铝填充物的集成半导体接触结构的制造方法，包括以下步骤：在设置在晶片上的绝缘层中形成接触孔，所述接触孔具有相应的底部和相应的侧壁，所述底部包括 各导电面积; 将所述晶片引入第一PVD沉积室，所述第一PVD沉积室包括晶片偏置装置; 并且在所述第一PVD沉积室中在所述晶片上冷沉积第一铝层，所述第一铝层覆盖所述底部和所述接触孔的所述侧壁并形成种子层; 其中在所述第一PVD沉积室中将所述第一铝层冷沉积在所述晶片上的步骤期间，所述晶片偏置装置被设置为在20W和700W之间或-50V至-800V的范围内的偏压。

公开(公告)号：US20060108324A1

公开(公告)日：2006-05-25

申请号：US10995025

申请日：2004-11-22

Applicant: Ronald Gottzein ,  Jens Bachmann ,  Dirk Efferenn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Wen-Bin Lin ,  Lee Donohue

Inventor： Ronald Gottzein ,  Jens Bachmann ,  Dirk Efferenn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Wen-Bin Lin ,  Lee Donohue

IPC: C23G1/00 ,  H01L21/302 ,  B44C1/22

CPC classification number: G03F7/427 ,  C23G5/00 ,  H01J37/32192 ,  H01J2237/3342 ,  H01L21/02071

Abstract: The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps of: (a) heating up the substrate with the metal structure in the presence of molecular nitrogen gas (N2); (b) a stabilization step in the presence of pure molecular nitrogen gas (N2); (c) a passivation step employing a plasma containing at least one of the group of water, nitrogen and oxygen; and (d) a stripping step containing oxygen to remove the residue, comprising resist.

Abstract translation: 本发明涉及从半导体衬底上的金属结构去除包含聚合物抗蚀剂和金属氧化物的残余物的方法，该方法包括以下步骤：（a）在分子氮存在下用金属结构加热衬底 气体（N 2/2）; （b）在纯分子氮气（N 2 O 2）存在下的稳定步骤; （c）使用包含一组水，氮和氧中的至少一种的等离子体的钝化步骤; 和（d）包含氧以除去残留物的剥离步骤，包括抗蚀剂。

公开(公告)号：US20120305959A1

公开(公告)日：2012-12-06

申请号：US13241667

申请日：2011-09-23

Applicant: Kuo-Hui Yu ,  Chang-Hsin Chu ,  Chi-Lung Wu ,  Shin-Jia Chiou ,  Chung-Hsin Lin ,  Jui-Chun Chang

Inventor： Kuo-Hui Yu ,  Chang-Hsin Chu ,  Chi-Lung Wu ,  Shin-Jia Chiou ,  Chung-Hsin Lin ,  Jui-Chun Chang

IPC: H01L33/58 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0756 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2924/0002 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, a first electrical type conductive branch, a first electrical type electrode layer, an insulating layer, filled in the first and the second grooves, and a second electrical type electrode layer, electrically connected to the second electrical type semiconductor layer.

Abstract translation: 发光二极管（LED）装置包括具有第一和第二表面的基板，设置在第一表面上的第一结合层，第一外延结构，具有第三和第四表面，并且包括第一和第二表面 第二沟槽，其中所述第一外延结构包括依次层叠在所述第一接合层上的第二电型半导体层，有源层和第一电型半导体层，并且所述第一沟槽从所述第四表面延伸到所述第一电型半导体 层，所述第二凹槽从所述第四表面延伸到所述第三表面，填充在所述第一和第二凹槽中的第一电气型导电分支，第一电气型电极层，绝缘层，以及第二电气 电连接到第二电气型半导体层。

公开(公告)号：US07157381B2

公开(公告)日：2007-01-02

申请号：US10868309

申请日：2004-06-15

Applicant: Dirk Efferenn ,  Jens Hahn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Jens Bachmann ,  Wen-Bin Lin ,  Grit Bonsdorf

Inventor： Dirk Efferenn ,  Jens Hahn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Jens Bachmann ,  Wen-Bin Lin ,  Grit Bonsdorf

IPC: H01L21/302

CPC classification number: H01L21/32134 ,  H01L21/76838 ,  H01L21/76849

Abstract: A method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits includes the following steps: providing a substrate; providing a whisker-containing layer made of aluminum metal or an aluminum alloy on the substrate; back-etching and/or resputtering the whisker-containing layer such that the whiskers are essentially removed; and structuring the whisker-free layer into the lines.

Abstract translation: 一种在集成电路中提供无晶须的铝金属线或铝合金线的方法包括以下步骤：提供基板; 在基板上提供由铝金属或铝合金制成的含晶须层; 背面蚀刻和/或重新溅射含晶须层，使得晶须基本上被除去; 并将不含晶须的层结构化成线。

公开(公告)号：US20050277300A1

公开(公告)日：2005-12-15

申请号：US10868309

申请日：2004-06-15

Applicant: Dirk Efferenn ,  Jens Hahn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Jens Bachmann ,  Wen-Bin Lin ,  Grit Bonsdorf

Inventor： Dirk Efferenn ,  Jens Hahn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Jens Bachmann ,  Wen-Bin Lin ,  Grit Bonsdorf

IPC: H01L21/302 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/32134 ,  H01L21/76838 ,  H01L21/76849

Abstract: A method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits includes the following steps: providing a substrate; providing a whisker-containing layer made of aluminum metal or an aluminum alloy on the substrate; back-etching and/or resputtering the whisker-containing layer such that the whiskers are essentially removed; and structuring the whisker-free layer into the lines.

Abstract translation: 一种在集成电路中提供无晶须的铝金属线或铝合金线的方法包括以下步骤：提供基板; 在基板上提供由铝金属或铝合金制成的含晶须层; 背面蚀刻和/或重新溅射含晶须层，使得晶须基本上被除去; 并将不含晶须的层结构化成线。

公开(公告)号：US20130092955A1

公开(公告)日：2013-04-18

申请号：US13403734

申请日：2012-02-23

Applicant: Shin-Jia Chiou ,  Chung Hsin Lin ,  Chi-Lung Wu ,  Jui-Chun Chang

Inventor： Shin-Jia Chiou ,  Chung Hsin Lin ,  Chi-Lung Wu ,  Jui-Chun Chang

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/34 ,  H01L33/10

CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/40

Abstract: A light-emitting diode (LED) and fabricating method thereof. The method includes: providing a first substrate and forming an epitaxial portion on the first substrate; forming at least one reflection layer on the epitaxial portion; forming a metal barrier portion on the reflection layer; etching the epitaxial portion and the barrier portion by a first etching process, so as to form a plurality of epitaxial layers and a plurality of metal barrier layers, an etch channel is formed between adjacent epitaxial layers, and each metal barrier layer enwraps a corresponding reflection layer and covers all of a surface of a corresponding epitaxial layer; forming a first bonding layer on the metal barrier layer; and forming a second substrate on the first bonding layer and removing the first substrate.

Abstract translation: 发光二极管（LED）及其制造方法。 该方法包括：提供第一衬底并在第一衬底上形成外延部分; 在所述外延部分上形成至少一个反射层; 在反射层上形成金属阻挡部分; 通过第一蚀刻工艺蚀刻外延部分和势垒部分，以便形成多个外延层和多个金属阻挡层，在相邻的外延层之间形成蚀刻通道，并且每个金属阻挡层包含相应的反射 并覆盖相应外延层的所有表面; 在所述金属阻挡层上形成第一结合层; 以及在所述第一接合层上形成第二衬底并移除所述第一衬底。

公开(公告)号：US07413993B2

公开(公告)日：2008-08-19

申请号：US10995025

申请日：2004-11-22

Applicant: Ronald Gottzein ,  Jens Bachmann ,  Dirk Efferenn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Wen-Bin Lin ,  Lee Donohue

Inventor： Ronald Gottzein ,  Jens Bachmann ,  Dirk Efferenn ,  Uwe Kahler ,  Chung-Hsin Lin ,  Wen-Bin Lin ,  Lee Donohue

IPC: H01L21/302

CPC classification number: G03F7/427 ,  C23G5/00 ,  H01J37/32192 ,  H01J2237/3342 ,  H01L21/02071

Abstract: The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps of: (a) heating up the substrate with the metal structure in the presence of molecular nitrogen gas (N2); (b) a stabilization step in the presence of pure molecular nitrogen gas (N2); (c) a passivation step employing a plasma containing at least one of the group of water, nitrogen and oxygen; and (d) a stripping step containing oxygen to remove the residue, comprising resist.

Abstract translation: 本发明涉及从半导体衬底上的金属结构去除包含聚合物抗蚀剂和金属氧化物的残余物的方法，该方法包括以下步骤：（a）在分子氮存在下用金属结构加热衬底 气体（N 2/2）; （b）在纯分子氮气（N 2 O 2）存在下的稳定步骤; （c）使用包含一组水，氮和氧中的至少一种的等离子体的钝化步骤; 和（d）包含氧以除去残留物的剥离步骤，包括抗蚀剂。