公开(公告)号：US20150357418A1

公开(公告)日：2015-12-10

申请号：US14760989

申请日：2014-01-03

Applicant: Kye-Jin LEE ,  Ho-Jun LEE ,  Young-Jae CHOI ,  Jung-Hyun EUM ,  Chung-Hyun LEE ,  LG SILTRON INC.

Inventor： Kye-Jin LEE ,  Ho-Jun LEE ,  Young-Jae CHOI ,  Jung-Hyun EUM ,  Chung-Hyun LEE

IPC: H01L29/205 ,  H01L29/20

CPC classification number: H01L29/36 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/205

Abstract: Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes a plurality of step regions and at least one heterogeneous region. The plurality of step regions includes the same nitride semiconductor material. The heterogeneous region includes a different nitride semiconductor material from the step regions.

Abstract translation: 本发明提供一种半导体衬底，其包括设置在衬底上的种子层，设置在籽晶层上的缓冲层，设置在缓冲层上的多个氮化物半导体层以及多个氮化物半导体层之间的至少一个应力控制层。 缓冲层包括多个步骤区域和至少一个异质区域。 多个台阶区域包括相同的氮化物半导体材料。 异质区域包括与步骤区域不同的氮化物半导体材料。

公开(公告)号：US08879320B2

公开(公告)日：2014-11-04

申请号：US13611598

申请日：2012-09-12

Applicant: Chung-Hyun Lee ,  Ki-Hwan Choi

Inventor： Chung-Hyun Lee ,  Ki-Hwan Choi

IPC: G11C11/34

CPC classification number: G11C11/5628 ,  G11C16/0483 ,  G11C16/3436

Abstract: A method of programming a multi-level cells (MLC) commonly coupled to a word line in a non-volatile memory device includes shadow-programming first MLC to a first shadow state, shadow-programming second MLC to a second shadow state less than the first shadow state, and then main-programming the first MLC from the first shadow state to a first final state and main-programming the second MLC from the second shadow state to the second final state less than the first final state.

Abstract translation: 通常耦合到非易失性存储器设备中的字线的多电平单元（MLC）的编程方法包括将第一MLC的影子编程为第一影像状态，将第二影像编程第二MLC设置为小于 第一阴影状态，然后将第一MLC从第一阴影状态主编程为第一最终状态，并将第二MLC从第二阴影状态主编程为小于第一最终状态的第二最终状态。

公开(公告)号：US20130135929A1

公开(公告)日：2013-05-30

申请号：US13611598

申请日：2012-09-12

Applicant: CHUNG-HYUN LEE ,  KI-HWAN CHOI

Inventor： CHUNG-HYUN LEE ,  KI-HWAN CHOI

IPC: G11C16/04

CPC classification number: G11C11/5628 ,  G11C16/0483 ,  G11C16/3436

Abstract: A method of programming a multi-level cells (MLC) commonly coupled to a word line in a non-volatile memory device includes shadow-programming first MLC to a first shadow state, shadow-programming second MLC to a second shadow state less than the first shadow state, and then main-programming the first MLC from the first shadow state to a first final state and main-programming the second MLC from the second shadow state to the second final state less than the first final state.

Abstract translation: 通常耦合到非易失性存储器设备中的字线的多电平单元（MLC）的编程方法包括将第一MLC的影子编程为第一影像状态，将第二影像编程第二MLC设置为小于 第一阴影状态，然后将第一MLC从第一阴影状态主编程为第一最终状态，并将第二MLC从第二阴影状态主编程为小于第一最终状态的第二最终状态。