公开(公告)号：US20090291548A1

公开(公告)日：2009-11-26

申请号：US12124101

申请日：2008-05-20

Applicant: YUAN MING CHANG ,  CHENG DA WU ,  DA YU CHUANG ,  YEN TA CHEN

Inventor： YUAN MING CHANG ,  CHENG DA WU ,  DA YU CHUANG ,  YEN TA CHEN

IPC: H01L21/28

CPC classification number: H01L21/28017 ,  H01L21/32155 ,  H01L21/324

Abstract: A method for preparing a P-type polysilicon gate structure comprises the steps of forming a gate oxide layer on a substrate, forming an N-type polysilicon layer on the gate oxide layer, performing a first implanting process to convert the N-type polysilicon layer into a P-type polysilicon layer, performing a second implanting process to implant P-type dopants into a portion of the P-type polysilicon layer near the interface between the gate oxide layer and the P-type polysilicon layer, and performing a thermal treating process at a predetermined temperature for a predetermined period to complete the P-type polysilicon gate structure.

Abstract translation: 一种制备P型多晶硅栅结构的方法，包括以下步骤：在衬底上形成栅极氧化层，在栅极氧化层上形成N型多晶硅层，进行第一注入工艺以将N型多晶硅层 进入P型多晶硅层，进行第二注入工序，将P型掺杂剂注入到栅极氧化层和P型多晶硅层之间的界面附近的P型多晶硅层的一部分中，进行热处理 在预定温度下处理预定时间以完成P型多晶硅栅极结构。

公开(公告)号：US07638442B2

公开(公告)日：2009-12-29

申请号：US12149906

申请日：2008-05-09

Applicant: Cheng-Ta Wu ,  Da-Yu Chuang ,  Yen-Da Chen ,  Lihan Lin

Inventor： Cheng-Ta Wu ,  Da-Yu Chuang ,  Yen-Da Chen ,  Lihan Lin

IPC: H01L21/00

CPC classification number: H01L21/28202 ,  H01L21/28185

Abstract: A process for forming a silicon nitride layer on a gate oxide film as part of formation of a gate structure in a semiconductor device includes: forming a layer of silicon nitride on top of a gate oxide film on a semiconductor substrate by a nitridation process, heating the semiconductor substrate in an annealing chamber, exposing the semiconductor substrate to N2 in the annealing chamber, and exposing the semiconductor substrate to a mixture of N2 and N2O in the annealing chamber.

Abstract translation: 在半导体器件中形成栅极结构的一部分，在栅极氧化膜上形成氮化硅层的工艺包括：通过氮化工艺在半导体衬底上的栅极氧化膜的顶部上形成氮化硅层，加热 在退火室中的半导体衬底，将半导体衬底暴露于退火室中的N2，并将半导体衬底暴露于退火室中的N 2和N 2 O的混合物。

公开(公告)号：US20090298284A1

公开(公告)日：2009-12-03

申请号：US12128434

申请日：2008-05-28

Applicant: TZU LUN CHENG ,  CHENG DA WU ,  DA YU CHUANG ,  WEI HENG LEE

Inventor： TZU LUN CHENG ,  CHENG DA WU ,  DA YU CHUANG ,  WEI HENG LEE

IPC: H01L21/44

CPC classification number: H01L21/28518

Abstract: A method for preparing an integrated circuit structure performs a deposition process to form a precursor layer on a substrate, and the precursor layer has a phase transition property in a transition temperature region. Subsequently, a first thermal treating process is performed at a first temperature to transform the precursor layer into a polymorphous layer possessing a predetermined crystalline phase, and the first temperature is higher than an upper limit of the temperature of the transition temperature region.

Abstract translation: 制备集成电路结构的方法执行沉积工艺以在衬底上形成前体层，并且前体层在转变温度区域中具有相变特性。 随后，在第一温度下进行第一热处理工艺，以将前体层转变为具有预定结晶相的多晶层，第一温度高于转变温度区域的温度的上限。

公开(公告)号：US20090280654A1

公开(公告)日：2009-11-12

申请号：US12149906

申请日：2008-05-09

Applicant: Cheng-Ta Wu ,  Da-Yu Chuang ,  Yen-Da Chen ,  Lihan Lin

Inventor： Cheng-Ta Wu ,  Da-Yu Chuang ,  Yen-Da Chen ,  Lihan Lin

IPC: H01L21/31

CPC classification number: H01L21/28202 ,  H01L21/28185

Abstract: A process for forming a silicon nitride layer on a gate oxide film as part of formation of a gate structure in a semiconductor device includes: forming a layer of silicon nitride on top of a gate oxide film on a semiconductor substrate by a nitridation process, heating the semiconductor substrate in an annealing chamber, exposing the semiconductor substrate to N2 in the annealing chamber, and exposing the semiconductor substrate to a mixture of N2 and N2O in the annealing chamber.

Abstract translation: 在半导体器件中形成栅极结构的一部分，在栅极氧化膜上形成氮化硅层的工艺包括：通过氮化工艺在半导体衬底上的栅极氧化膜的顶部上形成氮化硅层，加热 在退火室中的半导体衬底，将半导体衬底暴露于退火室中的N2，并将半导体衬底暴露于退火室中的N 2和N 2 O的混合物。