公开(公告)号：US07556550B2

公开(公告)日：2009-07-07

申请号：US11292408

申请日：2005-11-30

Applicant: Emmett M. Howard ,  Kenneth A. Dean ,  Dirk C. Jordan

Inventor： Emmett M. Howard ,  Kenneth A. Dean ,  Dirk C. Jordan

IPC: H01J9/00

CPC classification number: H01J9/025 ,  H01J3/021 ,  H01J9/148 ,  H01J29/481

Abstract: A method is provided for preventing electron emission from a sidewall (34) of a gate electrode (20) and the edge (28) of the gate electrode stack of a field emission device (10), the gate electrode (20) having a surface (24) distally disposed from an anode (40) and a side (26) proximate to emission electrodes (38). The method comprises growing dielectric material (22) over the surface (24) and side (26) of the gate electrode (20), and performing an anisotropic etch (32) normal to the surface (24) to remove the dielectric material (22) from the surface (24) and leaving at least a portion of the dielectric material (22) on the side (26) of the gate electrode (20) and edge (28) of the gate electrode stack.

Abstract translation: 提供了一种防止来自栅极电极（20）的侧壁（34）和场致发射器件（10）的栅极电极堆叠的边缘（28）的电子发射的方法，栅电极（20）具有表面 （40）和靠近发射电极（38）的侧面（26）远离地设置的（24）。 该方法包括在栅电极（20）的表面（24）和侧面（26）上方生长电介质材料（22），并且执行垂直于表面（24）的各向异性蚀刻（32）以移除电介质材料 ），并且在栅电极（20）的侧面（26）和栅极电极叠层的边缘（28）上留下介电材料（22）的至少一部分。

公开(公告)号：US06745717B2

公开(公告)日：2004-06-08

申请号：US09887777

申请日：2001-06-22

Applicant: R. Bruce Doak ,  Christopher T. Burns ,  Dirk C. Jordan

Inventor： R. Bruce Doak ,  Christopher T. Burns ,  Dirk C. Jordan

IPC: C23C1600

CPC classification number: C23C16/513 ,  C23C16/303 ,  C23C16/308 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631

Abstract: Semiconductor nitride layers are produced using a corona discharge supersonic free-jet source producing an activated nitrogen molecule beam impacting a semiconductor substrate in the presence of a group III metal or impacting an oxide layer on a semiconductor substrate. The activated nitrogen molecules are of the form N2A3&Sgr;u+. Apparatus for producing the nitride layer on the substrate includes the corona discharge free-jet source, a skimmer to collimate the N2 beam and succeeding stages interconnected by collimators and evacuated to draw off background gases.

Abstract translation: 使用电晕放电超音速自由射流源产生半导体氮化物层，其产生在III族金属存在下冲击半导体衬底的活性氮分子束或冲击半导体衬底上的氧化物层。 活化的氮分子是N2A 3 Sigmau +的形式。 用于在衬底上生产氮化物层的设备包括电晕放电自由射流源，用于准直N2光束的分离器和通过准直器互连并抽真空以抽出背景气体的后续级。

公开(公告)号：US06693033B2

公开(公告)日：2004-02-17

申请号：US09983854

申请日：2001-10-26

Applicant: John L. Edwards, Jr. ,  Yi Wei ,  Dirk C. Jordan ,  Xiaoming Hu ,  James Bradley Craigo ,  Ravindranath Droopad ,  Zhiyi Yu ,  Alexander A. Demkov

Inventor： John L. Edwards, Jr. ,  Yi Wei ,  Dirk C. Jordan ,  Xiaoming Hu ,  James Bradley Craigo ,  Ravindranath Droopad ,  Zhiyi Yu ,  Alexander A. Demkov

IPC: H01L2120

CPC classification number: C30B25/18 ,  C30B33/00 ,  H01L21/02197 ,  H01L21/02299 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31111 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30

Abstract: A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.

Abstract translation: 提供了从单晶衬底的表面去除非晶氧化物的方法。 该方法包括沉积覆盖无定形氧化物的钝化材料。 然后加热单晶衬底，使得无定形氧化物层分解成从表面释放出的至少一种挥发性物质。