Abstract:
A skid steer machine includes an operator cage supported on a skid steer machine frame. A pair of lift arms are pivotably attached to the skid steer machine frame behind the operator cage and extend longitudinally on both sides of the operator cage. A cooling package includes a first heat exchanger and a second heat exchanger, and a blower fan configured to blow air in parallel through the first heat exchanger and the second heat exchanger. The cooling package is pivotably mounted to the skid steer machine frame using at least one pivotable mounting assembly and is pivotable between an operational position and a maintenance position. At least one non-metallic vibration isolator is positioned between the cooling package and the skid steer machine frame.
Abstract:
A skid steer machine includes an operator cage supported on a skid steer machine frame, a pair of lift arms pivotably attached to the skid steer machine frame behind the operator cage and extending longitudinally on both sides of the operator cage, and a rear mounted engine compartment supported on the skid steer machine frame. The rear mounted engine compartment includes an internal combustion engine, a diesel particulate filter fluidly connected to the internal combustion engine and positioned between the internal combustion engine and the operator cage, and a cooling package having a predominantly horizontal orientation. The cooling package is at a higher location within the rear mounted engine compartment than the diesel particulate filter.
Abstract:
In a method for making a low-defect single-crystal GaN film, an epitaxial nitride layer is deposited on a substrate. A first GaN layer is grown on the epitaxial nitride layer by HVPE under a growth condition that promotes the formation of pits, wherein after growing the first GaN layer the GaN film surface morphology is rough and pitted. A second GaN layer is grown on the first GaN layer to form a GaN film on the substrate. The second GaN layer is grown by HVPE under a growth condition that promotes filling of the pits, and after growing the second GaN layer the GaN film surface morphology is essentially pit-free. A GaN film having a characteristic dimension of about 2 inches or greater, and a thickness normal ranging from approximately 10 to approximately 250 microns, includes a pit-free surface, the threading dislocation density being less than 1×108 cm−2.
Abstract translation:在制造低缺陷单晶GaN膜的方法中,在衬底上沉积外延氮化物层。 在促进凹坑形成的生长条件下,通过HVPE在外延氮化物层上生长第一GaN层,其中在生长第一GaN层之后,GaN膜表面形貌粗糙和凹陷。 在第一GaN层上生长第二GaN层,以在衬底上形成GaN膜。 第二GaN层通过HVPE在促进凹坑填充的生长条件下生长,并且在生长第二GaN层之后,GaN膜表面形态基本上是无凹坑的。 具有约2英寸或更大的特征尺寸和约10至约250微米的厚度法线的GaN膜包括无凹坑表面,穿透位错密度小于1×10 8 cm -2。
Abstract:
A machine includes an internal combustion engine disposed within an engine compartment and supported on a machine frame. An exhaust stack has an inlet fluidly connected to an exhaust manifold of the internal combustion engine and an outlet in fluid communication with ambient air. A diesel particulate filter is disposed along the exhaust stack. A cooling package includes at least one heat exchanger and a blower fan. The blower fan is configured to blow cooling air from the engine compartment sequentially through the at least one heat exchanger and an outlet of the cooling package. Exhaust gas exiting the exhaust stack outlet is mixed with the cooling air exiting the cooling package outlet in a high temperature zone surrounding the exhaust stack outlet to form a fluid mixture, and a temperature of the fluid mixture at a perimeter of the high temperature zone is below 200 degrees Celsius.
Abstract:
A machine includes an internal combustion engine disposed within an engine compartment and supported on a machine frame. An exhaust stack has an inlet fluidly connected to an exhaust manifold of the internal combustion engine and an outlet in fluid communication with ambient air. A diesel particulate filter is disposed along the exhaust stack, and the machine includes an active regeneration system for regenerating the diesel particulate filter. A cooling package including at least one heat exchanger and a blower fan. The blower fan is configured to blow cooling air from the engine compartment sequentially through the at least one heat exchanger and an outlet of the cooling package. Exhaust gas exiting the exhaust stack outlet is mixed with the cooling air exiting the cooling package outlet in a high temperature zone surrounding the exhaust stack outlet to form a fluid mixture. An electronic control module is in control communication with the active regeneration system and includes a regeneration control algorithm operable to detect a speed of the blower fan.
Abstract:
A machine includes an internal combustion engine disposed within an engine compartment and supported on a machine frame. An exhaust stack has an inlet fluidly connected to an exhaust manifold of the internal combustion engine and an outlet in fluid communication with ambient air. A diesel particulate filter is disposed along the exhaust stack, and the machine includes an active regeneration system for regenerating the diesel particulate filter. A cooling package including at least one heat exchanger and a blower fan. The blower fan is configured to blow cooling air from the engine compartment sequentially through the at least one heat exchanger and an outlet of the cooling package. Exhaust gas exiting the exhaust stack outlet is mixed with the cooling air exiting the cooling package outlet in a high temperature zone surrounding the exhaust stack outlet to form a fluid mixture. An electronic control module is in control communication with the active regeneration system and includes a regeneration control algorithm operable to detect a speed of the blower fan.
Abstract:
A skid steer machine includes an operator cage supported on a skid steer machine frame, a pair of lift arms pivotably attached to the skid steer machine frame behind the operator cage and extending longitudinally on both sides of the operator cage, and a rear mounted engine compartment supported on the skid steer machine frame. The rear mounted engine compartment includes an internal combustion engine, a diesel particulate filter fluidly connected to the internal combustion engine and positioned between the internal combustion engine and the operator cage, and a cooling package having a predominantly horizontal orientation. The cooling package is at a higher location within the rear mounted engine compartment than the diesel particulate filter.
Abstract:
A machine includes an internal combustion engine disposed within an engine compartment and supported on a machine frame. An exhaust stack has an inlet fluidly connected to an exhaust manifold of the internal combustion engine and an outlet in fluid communication with ambient air. A diesel particulate filter is disposed along the exhaust stack. A cooling package includes at least one heat exchanger and a blower fan. The blower fan is configured to blow cooling air from the engine compartment sequentially through the at least one heat exchanger and an outlet of the cooling package. Exhaust gas exiting the exhaust stack outlet is mixed with the cooling air exiting the cooling package outlet in a high temperature zone surrounding the exhaust stack outlet to form a fluid mixture, and a temperature of the fluid mixture at a perimeter of the high temperature zone is below 200 degrees Celsius.
Abstract:
In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.