公开(公告)号：US08895942B2

公开(公告)日：2014-11-25

申请号：US12211640

申请日：2008-09-16

Applicant: Junjun Liu ,  Jacques Faguet ,  Eric M. Lee ,  Dorel I. Toma ,  Hongyu Yue

Inventor： Junjun Liu ,  Jacques Faguet ,  Eric M. Lee ,  Dorel I. Toma ,  Hongyu Yue

IPC: H01L21/67 ,  B23K26/08 ,  B23K26/12 ,  C23C16/56

CPC classification number: H01L21/67115 ,  B23K26/082 ,  B23K26/12 ,  B23K26/127 ,  C23C16/56

Abstract: A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.

Abstract translation: 描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置 用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

公开(公告)号：US08039049B2

公开(公告)日：2011-10-18

申请号：US11239294

申请日：2005-09-30

Applicant: Eric M. Lee ,  Dorel I. Toma

Inventor： Eric M. Lee ,  Dorel I. Toma

IPC: C23C16/00

CPC classification number: H01L21/3105 ,  H01L21/02063 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828

Abstract: A method and system for treating a dielectric film in a batch processing system includes exposing at least one surface of the dielectric film to a treating compound including a CxHy containing compound, where x and y represent integers greater than or equal to unity. The plurality of wafers are heated when the treating compound is introduced. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing.

Abstract translation: 用于处理间歇处理系统中的电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于包含含C x H y的化合物的处理化合物，其中x和y表示大于或等于1的整数。 当处理化合物被引入时，多个晶片被加热。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。

公开(公告)号：US07901743B2

公开(公告)日：2011-03-08

申请号：US11239306

申请日：2005-09-30

Applicant: Eric M. Lee ,  Dorel I. Toma

Inventor： Eric M. Lee ,  Dorel I. Toma

IPC: H05H1/24

CPC classification number: H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method and system for treating a dielectric film on a plurality of substrates includes disposing the plurality of substrates in a batch processing system, the dielectric film on the plurality of substrates having a dielectric constant value less than the dielectric constant of SiO2. The plurality of substrates are heated, and a treating compound comprising a CxHy containing compound, wherein x and y represent integers greater than or equal to unity is introduced to the process system. A plasma is formed and at least one surface of the dielectric film on said plurality of substrates is exposed to the plasma.

Abstract translation: 用于处理多个基板上的电介质膜的方法和系统包括将多个基板设置在间歇处理系统中，多个基板上的电介质膜的介电常数值小于SiO 2的介电常数。 将多个基板加热，并且将包含含C x H y的化合物的处理化合物引入到工艺系统中，其中x和y表示大于或等于1的整数。 形成等离子体，并且将所述多个基板上的电介质膜的至少一个表面暴露于等离子体。

公开(公告)号：US07855123B2

公开(公告)日：2010-12-21

申请号：US12415022

申请日：2009-03-31

Applicant: Eric M. Lee ,  Junjun Liu ,  Dorel I. Toma

Inventor： Eric M. Lee ,  Junjun Liu ,  Dorel I. Toma

IPC: H01L21/76

CPC classification number: H01L21/7682 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02271 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming an air gap structure on a substrate is described. The method comprises depositing a sacrificial layer on a substrate, forming an adhesion-promoting layer between the sacrificial layer and the substrate, and depositing a capping layer over the sacrificial layer. The sacrificial layer and the capping layer are patterned and metalized. Thereafter, the sacrificial layer is decomposed and removed through the capping layer.

公开(公告)号：US07199046B2

公开(公告)日：2007-04-03

申请号：US10706968

申请日：2003-11-14

Applicant: Jeffrey T. Wetzel ,  David C. Wang ,  Eric M. Lee ,  Dorel Ioan Toma

Inventor： Jeffrey T. Wetzel ,  David C. Wang ,  Eric M. Lee ,  Dorel Ioan Toma

IPC: H01L21/4763 ,  H01L21/311 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76811 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76813

Abstract: An interconnect structure in back end of line (BEOL) applications comprising a tunable etch resistant anti-reflective (TERA) coating is described. The TERA coating can, for example, be incorporated within a single damascene structure, or a dual damascene structure. The TERA coating can serve as part of a lithographic mask for forming the interconnect structure, or it may serve as a hard mask, a chemical mechanical polishing (CMP) stop layer, or a sacrificial layer during CMP.

Abstract translation: 描述了后端行（BEOL）应用中的互连结构，其包括可调蚀抗蚀抗反射（TERA）涂层。 例如，TERA涂层可以结合在单个镶嵌结构内或双镶嵌结构中。 TERA涂层可用作用于形成互连结构的光刻掩模的一部分，或者可以在CMP期间用作硬掩模，化学机械抛光（CMP）停止层或牺牲层。

公开(公告)号：US09139910B2

公开(公告)日：2015-09-22

申请号：US12814301

申请日：2010-06-11

Applicant: Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

Inventor： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/52 ,  C23C16/44 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/463

Abstract: A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.

Abstract translation: 描述了在沉积系统中在衬底上沉积薄膜的方法。 该方法包括在沉积系统中设置包括多个加热元件区域的气体加热装置，并且独立地控制多个加热元件区域中的每一个的温度，其中多个加热元件区域中的每一个具有一个或多个电阻加热 元素。 另外，该方法包括在沉积系统中的衬底保持器上设置衬底，其中衬底保持器具有一个或多个温度控制区。 该方法还包括向耦合到沉积系统的气体加热装置提供成膜组合物，使用气体加热装置热解成膜组合物的一种或多种组分，并将成膜组合物引入到沉积系统中的基底上 在基板上沉积薄膜。

公开(公告)号：US08956457B2

公开(公告)日：2015-02-17

申请号：US11517358

申请日：2006-09-08

Applicant: Eric M. Lee ,  Junjun Liu ,  Dorel I. Toma

Inventor： Eric M. Lee ,  Junjun Liu ,  Dorel I. Toma

IPC: C23C16/00 ,  B05B5/00 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/316

CPC classification number: H01L21/67115 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31612 ,  H01L21/31695

Abstract: A thermal processing system and method for curing a dielectric film. The thermal processing system is configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film. The thermal processing system can include an array if IR and UV light-emitting devices (LEDs) configured to irradiate a substrate having a low dielectric constant (low-k) film. The method dries the dielectric film to remove contaminants from the film and exposes the dielectric film at a single stage to ultraviolet radiation and IR radiation.

Abstract translation: 一种用于固化电介质膜的热处理系统和方法。 热处理系统被配置为用紫外（UV）辐射和红外（IR）辐射来处理电介质膜，以便固化电介质膜。 如果IR和UV发光器件（LED）被配置为照射具有低介电常数（低k）膜的衬底，则热处理系统可以包括阵列。 该方法干燥电介质膜以从膜中去除污染物并将介电膜在单一阶段暴露于紫外线和IR辐射。

公开(公告)号：US20110126762A1

公开(公告)日：2011-06-02

申请号：US13025133

申请日：2011-02-10

Applicant: Jacques Faguet ,  Eric M. Lee

Inventor： Jacques Faguet ,  Eric M. Lee

IPC: C23C16/503 ,  C23C16/50

CPC classification number: C23C16/452 ,  B05D1/60 ,  C23C16/44 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/487 ,  C23C16/50

Abstract: A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate, a non-ionizing heat source separate from the substrate holder that is configured to receive a flow of the film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated, and one or more power sources coupled to the heating element array and configured to provide an electrical signal to the at least one heating element zone. The deposition system further includes a remote source coupled to the process chamber and configured to supply a reactive composition to the process chamber to chemically interact with the substrate, wherein the remote source comprises a remote plasma generator, a remote radical generator, a remote ozone generator, or a water vapor generator, or a combination of two or more thereof.

Abstract translation: 描述了使用气相沉积工艺在衬底上沉积薄膜的系统。 沉积系统包括具有真空泵送系统的处理室，该真空泵送系统被构造成抽空处理室;衬底保持器，其耦合到处理室并且被配置为支撑衬底;气体分配系统，其耦合到处理室并被配置成引入成膜 组合物到基板表面附近的处理空间，与基板保持器分离的非电离热源，其构造成接收成膜组合物的流动并引起一个或多个成分的热分解 加热时的成膜组合物，以及耦合到加热元件阵列并被配置为向至少一个加热元件区域提供电信号的一个或多个电源。 沉积系统还包括耦合到处理室并被配置为将反应性组合物供应到处理室以与衬底化学相互作用的远程源，其中远程源包括远程等离子体发生器，远程自发发生器，远程臭氧发生器 ，或水蒸汽发生器，或其两个或更多个的组合。

公开(公告)号：US20100248443A1

公开(公告)日：2010-09-30

申请号：US12415022

申请日：2009-03-31

Applicant: Eric M. LEE ,  Junjun LIU ,  Dorel I. TOMA

Inventor： Eric M. LEE ,  Junjun LIU ,  Dorel I. TOMA

IPC: H01L21/764

CPC classification number: H01L21/7682 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02271 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming an air gap structure on a substrate is described. The method comprises depositing a sacrificial layer on a substrate, forming an adhesion-promoting layer between the sacrificial layer and the substrate, and depositing a capping layer over the sacrificial layer. The sacrificial layer and the capping layer are patterned and metalized. Thereafter, the sacrificial layer is decomposed and removed through the capping layer.

Abstract translation: 描述了在基板上形成气隙结构的方法。 该方法包括在衬底上沉积牺牲层，在牺牲层和衬底之间形成粘合促进层，以及在牺牲层上沉积覆盖层。 牺牲层和覆盖层被图案化和金属化。 此后，牺牲层通过封盖层分解和去除。

公开(公告)号：US20090227119A1

公开(公告)日：2009-09-10

申请号：US12043772

申请日：2008-03-06

Applicant: Junjun Liu ,  Dorel I. Toma ,  Eric M. Lee

Inventor： Junjun Liu ,  Dorel I. Toma ,  Eric M. Lee

IPC: H01L21/3105 ,  H01L21/268

CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/268 ,  H01L21/31695

Abstract: A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.

Abstract translation: 描述了在基底上固化低介电常数（低k）电介质膜的方法，其中低k电介质膜的介电常数小于约4的值。该方法包括使低k电介质 膜对红外（IR）辐射和紫外线（UV）辐射。