公开(公告)号：US20160035784A9

公开(公告)日：2016-02-04

申请号：US14660570

申请日：2015-03-17

Applicant: Yong-Chan KIM ,  Seung-Sik KIM ,  Eun-Sub SHIM ,  Moo-Sup LIM

Inventor： Yong-Chan KIM ,  Seung-Sik KIM ,  Eun-Sub SHIM ,  Moo-Sup LIM

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14683 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/3559

Abstract: Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.

公开(公告)号：US20160013227A1

公开(公告)日：2016-01-14

申请号：US14792862

申请日：2015-07-07

Applicant: Seung-Sik KIM ,  Young-Chan KIM ,  Eun-Sub Shim ,  Min-Seok OH ,  Ji-Won LEE ,  Moo-Sup LIM ,  Tae-Han KIM ,  Dong-Joo YANG

Inventor： Seung-Sik KIM ,  Young-Chan KIM ,  Eun-Sub Shim ,  Min-Seok OH ,  Ji-Won LEE ,  Moo-Sup LIM ,  Tae-Han KIM ,  Dong-Joo YANG

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14641

Abstract: Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.

Abstract translation: 提供了包括与第一像素相邻的第一像素和第二像素的图像传感器的像素阵列。 第一像素可以包括第一光电转换装置，第一电荷存储装置，第一浮动扩散节点和第一传输门。 第二像素可以包括第二光电转换装置，第二电荷存储装置，第二浮动扩散节点和第二传输门。 像素阵列还可以包括在第一电荷存储装置和第二电荷存储装置两者上的存储栅极。 存储门可以具有整体结构。

公开(公告)号：US20120050600A1

公开(公告)日：2012-03-01

申请号：US13218550

申请日：2011-08-26

Applicant: Jung-Chak AHN ,  Bum-Suk Kim ,  Kyung-Ho Lee ,  Eun-Sub Shim

Inventor： Jung-Chak AHN ,  Bum-Suk Kim ,  Kyung-Ho Lee ,  Eun-Sub Shim

IPC: H04N9/07 ,  H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

Abstract: A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of unit pixels, an interlayer insulating layer disposed on a front side of the semiconductor substrate, a plurality of color filters disposed on a back side of the semiconductor substrate, a plurality of light path converters, each of the light path converters being disposed adjacent to at least one color filter and having a pair of slanted side edges extending from opposing ends of a horizontal bottom edge, and a plurality of micro lenses disposed on the color filters.

Abstract translation: 图像传感器的单位像素阵列包括具有多个单位像素的半导体衬底，设置在半导体衬底的前侧的层间绝缘层，设置在半导体衬底背面的多个滤色器，多个 每个光路转换器设置成与至少一个滤色器相邻，并且具有从水平底部边缘的相对端延伸的一对倾斜侧边缘和设置在滤色器上的多个微透镜。

公开(公告)号：US20150372038A1

公开(公告)日：2015-12-24

申请号：US14741740

申请日：2015-06-17

Applicant: Ji Won LEE ,  Seung Sik KIM ,  Young Chan KIM ,  Tae Han KIM ,  Eun Sub SHIM ,  Dong Joo YANG ,  Min Seok OH ,  Moo Sup LIM

Inventor： Ji Won LEE ,  Seung Sik KIM ,  Young Chan KIM ,  Tae Han KIM ,  Eun Sub SHIM ,  Dong Joo YANG ,  Min Seok OH ,  Moo Sup LIM

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14609 ,  H01L27/14643 ,  H04N5/3592 ,  H04N5/3696 ,  H04N5/378

Abstract: An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.

Abstract translation: 提供能够提高浮动扩散节点的电压的图像传感器。 图像传感器包括位于半导体衬底中的浮动扩散节点和存储元件。 图像传感器包括形成在浮动扩散节点上的第一遮光材料和形成在存储二极管上的第二遮光材料。 第二遮光材料与第一遮光材料分离。 图像传感器还包括被配置为向第一遮光材料施加第一电压的第一电压供给线和被配置为将低于第一电压的第二电压施加到第二遮光材料的第二电压供给线。

公开(公告)号：US08508013B2

公开(公告)日：2013-08-13

申请号：US13252560

申请日：2011-10-04

Applicant: Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

Inventor： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

IPC: H01L21/00

CPC classification number: H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract translation: 提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。 背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离 通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层， 一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。

公开(公告)号：US20130062500A1

公开(公告)日：2013-03-14

申请号：US13612904

申请日：2012-09-13

Applicant: Min-Seok Oh ,  Moo-Sup LIM ,  Jung-Chak AHN ,  Eun-Sub SHIM

Inventor： Min-Seok Oh ,  Moo-Sup LIM ,  Jung-Chak AHN ,  Eun-Sub SHIM

IPC: H01L31/0232 ,  H01L27/146 ,  H01L27/148 ,  H01L31/02

CPC classification number: G01S17/89 ,  G01S7/4816 ,  G01S7/4865 ,  H04N5/341 ,  H04N5/361 ,  H04N5/3745

Abstract: A unit pixel for an image sensor includes an accumulation circuit configured to generate an accumulated dark current by accumulating a charge corresponding to a dark current during a time of flight (TOF), the accumulation circuit being optically shaded to generate the dark current, an output voltage generation circuit configured to generate and output an output voltage corresponding to the TOF based on a charge corresponding to the accumulated dark current, a control circuit configured to control an operation of the output voltage generation circuit based on a light signal that is input to the unit pixel after being reflected by an object, the light signal being emitted by a light source, and an initialization circuit configured to initialize the accumulation circuit at a predetermined cycle.

Abstract translation: 图像传感器的单位像素包括积累电路，其被配置为通过在飞行时间（TOF）期间累积与暗电流相对应的电荷来产生累积的暗电流，所述累积电路被光学遮蔽以产生暗电流，输出 电压产生电路，被配置为基于与累积暗电流相对应的电荷来产生和输出与TOF对应的输出电压;控制电路，被配置为基于输入到所述暗电流的光信号来控制所述输出电压产生电路的操作 被物体反射后的单位像素，光信号由光源发射，以及初始化电路，被配置为以预定周期初始化累积电路。

公开(公告)号：US10136082B2

公开(公告)日：2018-11-20

申请号：US14616368

申请日：2015-02-06

Applicant: Min-Seok Oh ,  Young-Chan Kim ,  Eun-Sub Shim ,  Moo-Sup Lim

Inventor： Min-Seok Oh ,  Young-Chan Kim ,  Eun-Sub Shim ,  Moo-Sup Lim

IPC: H04N5/225 ,  H04N5/357 ,  H04N5/361 ,  H04N5/3745

Abstract: An image sensor includes a pixel array including at least one unit pixel configured to generate accumulated charges, a correlated double sampler configured to perform a correlated double sampling operation to extract an effective signal component based on a signal component and a reset component from the unit pixel for at least first and second read-out periods, the correlated double sampler configured to read out an image signal during the first read-out period and to read out a light noise signal during the second read-out period, an analog-digital converter configured to convert the image signal into a first digital signal and to convert the light noise signal into a second digital signal and an image compensator configured to generate a compensated image signal based on the second digital signal and the first digital signal.

公开(公告)号：US09653503B2

公开(公告)日：2017-05-16

申请号：US14741740

申请日：2015-06-17

Applicant: Ji Won Lee ,  Seung Sik Kim ,  Young Chan Kim ,  Tae Han Kim ,  Eun Sub Shim ,  Dong Joo Yang ,  Min Seok Oh ,  Moo Sup Lim

Inventor： Ji Won Lee ,  Seung Sik Kim ,  Young Chan Kim ,  Tae Han Kim ,  Eun Sub Shim ,  Dong Joo Yang ,  Min Seok Oh ,  Moo Sup Lim

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/335 ,  H04N5/355 ,  H04N5/359 ,  H04N5/369

CPC classification number: H01L27/14623 ,  H01L27/14609 ,  H01L27/14643 ,  H04N5/3592 ,  H04N5/3696 ,  H04N5/378

Abstract: An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.

公开(公告)号：US09024245B2

公开(公告)日：2015-05-05

申请号：US13612904

申请日：2012-09-13

Applicant: Min-Seok Oh ,  Moo-Sup Lim ,  Jung-Chak Ahn ,  Eun-Sub Shim

Inventor： Min-Seok Oh ,  Moo-Sup Lim ,  Jung-Chak Ahn ,  Eun-Sub Shim

IPC: G01S17/89 ,  G01S7/481 ,  G01S7/486 ,  H04N5/341 ,  H04N5/361 ,  H04N5/3745

CPC classification number: G01S17/89 ,  G01S7/4816 ,  G01S7/4865 ,  H04N5/341 ,  H04N5/361 ,  H04N5/3745

Abstract: A unit pixel for an image sensor includes an accumulation circuit configured to generate an accumulated dark current by accumulating a charge corresponding to a dark current during a time of flight (TOF), the accumulation circuit being optically shaded to generate the dark current, an output voltage generation circuit configured to generate and output an output voltage corresponding to the TOF based on a charge corresponding to the accumulated dark current, a control circuit configured to control an operation of the output voltage generation circuit based on a light signal that is input to the unit pixel after being reflected by an object, the light signal being emitted by a light source, and an initialization circuit configured to initialize the accumulation circuit at a predetermined cycle.

Abstract translation: 图像传感器的单位像素包括积累电路，其被配置为通过在飞行时间（TOF）期间累积与暗电流相对应的电荷来产生累积的暗电流，所述累积电路被光学遮蔽以产生暗电流，输出 电压产生电路，被配置为基于与累积暗电流相对应的电荷来产生和输出与TOF对应的输出电压;控制电路，被配置为基于输入到所述暗电流的光信号来控制所述输出电压产生电路的操作 被物体反射后的单位像素，光信号由光源发射，以及初始化电路，被配置为以预定周期初始化累积电路。

公开(公告)号：US08629486B2

公开(公告)日：2014-01-14

申请号：US13171946

申请日：2011-06-29

Applicant: Jung-chak Ahn ,  Eun-sub Shim ,  Bum-suk Kim ,  Kyung-ho Lee

Inventor： Jung-chak Ahn ,  Eun-sub Shim ,  Bum-suk Kim ,  Kyung-ho Lee

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/1868 ,  Y02E10/50

Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor, including a wiring layer, a photodiode stacked with the wiring layer, a micro-lens stacked on the photodiode, an anti-reflection layer stacked on the photodiode. An anti-absorption layer may be provided between the photodiode and the anti-reflection layer. The photodiode may include a first portion and a second portion. Light may be focused on the first portion by the micro-lens and the second portion may at least partially surround the first portion. A material of the first portion may have a refractive index higher than a refractive index of a material of the second portion. The anti-absorption layer may include a compound semiconductor having an energy band gap greater than an energy band gap of a semiconductor included in the photodiode.

Abstract translation: 包括布线层的互补金属氧化物半导体（CMOS）图像传感器，堆叠有布线层的光电二极管，堆叠在光电二极管上的微透镜，堆叠在光电二极管上的抗反射层。 可以在光电二极管和抗反射层之间设置抗吸收层。 光电二极管可以包括第一部分和第二部分。 光可以通过微透镜聚焦在第一部分上，并且第二部分可以至少部分地围绕第一部分。 第一部分的材料可以具有比第二部分的材料的折射率高的折射率。 抗吸收层可以包括具有比包含在光电二极管中的半导体的能带隙大的能带隙的化合物半导体。