Semiconductor devices
    1.
    发明授权

    公开(公告)号:US11676888B2

    公开(公告)日:2023-06-13

    申请号:US16900646

    申请日:2020-06-12

    CPC classification number: H01L23/49822 H01L23/528 H01L23/5226

    Abstract: A device including a stack of layers defining a first conductor pattern at a first level of the stack and one or more semiconductor channels in respective regions, connecting a pair of parts of the first conductor pattern, and capacitively coupled via a dielectric to a coupling conductor of a second conductor pattern at a second level of the stack. The stack includes at least two insulator patterns over which the first level or second level conductor patterns is formed. A first insulator pattern occupies one or more semiconductor channel regions to provide the dielectric. The second insulator pattern defines one or more windows in the one or more semiconductor channel regions through which the second conductor pattern contacts the first insulator pattern other than via the second insulator pattern. The second insulator pattern overlaps the first insulator pattern outside the one or more semiconductor channel regions.

    Curved display and sensor devices

    公开(公告)号:US11448912B2

    公开(公告)日:2022-09-20

    申请号:US16757059

    申请日:2018-10-18

    Abstract: A manufacturing process for forming a flexible assembly suitable for a curved sensor or display including a stack of layers defining electrical control circuitry is presented. The flexible assembly has a curved configuration and comprises at least first and second components (4, 8) laminated together in a stressed configuration due to their curvature. While the assembly is in said curved configuration at least the first and second components (4, 8) are cut to obtain one or more edges which are aligned to each other.

    AIR SPECIES BARRIERS IN LIQUID CRYSTAL DISPLAY DEVICES

    公开(公告)号:US20210181562A1

    公开(公告)日:2021-06-17

    申请号:US16758954

    申请日:2018-10-22

    Inventor: Barry Wild

    Abstract: A device, comprising: a liquid crystal cell comprising liquid crystal material; a stack of layers, including one or more organic polymer semiconductor layers, for electrically controlling one or more optical properties of the liquid crystal material; first and second air species barriers between which both said liquid crystal material and said one or more organic polymer semiconductor layers are located; and a third air species barrier between said liquid crystal material and said one or more organic polymer semiconductor layers; wherein the first and second air species barriers exhibit substantially different transmission rates under the same conditions for at least one air species.

    THIN-FILM TRANSISTOR (TFT) ARCHITECTURE FOR LIQUID CRYSTAL DISPLAYS

    公开(公告)号:US20210157206A1

    公开(公告)日:2021-05-27

    申请号:US16632814

    申请日:2018-07-20

    Inventor: James Harding

    Abstract: A device having a stack of layers defining source and pixel conductors at a first level, gate and common conductors at a second level, semiconductor channels between the source and pixel conductors and gate dielectric capacitively coupling the semiconductor channels to the gate conductors. The pixel and common conductors are configured such that, in use, a change in potential difference between the pixel and common conductors in a pixel region induces a change in one or more optical properties of a liquid crystal material in the pixel region.

    SEMICONDUCTOR PATTERNING
    8.
    发明申请

    公开(公告)号:US20210118912A1

    公开(公告)日:2021-04-22

    申请号:US16463670

    申请日:2017-11-28

    Abstract: A technique of producing a stack defining a plurality of TFTs including at least source/drain electrodes and addressing lines at a source/drain level, wherein the method comprises: forming a patterned source/drain level stack comprising at least a first layer over the support substrate and a second layer over the first layer, to define at least said source/drain electrodes and said addressing lines; depositing semiconductor channel material over at least said source/drain electrodes and said addressing lines; and patterning the layer of semiconductor channel material by a patterning process; wherein the material of the first layer is more resistant to removal by said patterning process than the material of said second layer.

    STACK PATTERNING
    9.
    发明申请

    公开(公告)号:US20210036247A1

    公开(公告)日:2021-02-04

    申请号:US16941749

    申请日:2020-07-29

    Abstract: A technique of forming a stack of layers defining electrical circuitry and comprising a plurality of inorganic conductor levels, wherein the method comprises: forming a conductor for at least one of the conductor levels in stages before and after a step of patterning an underlying organic layer.

    PATTERNING SEMICONDUCTOR FOR TFT DEVICE
    10.
    发明申请

    公开(公告)号:US20200313103A1

    公开(公告)日:2020-10-01

    申请号:US16651626

    申请日:2018-09-26

    Abstract: A technique, comprising: forming, over a substrate (2) comprising at least source and drain conductors (4, 6) for one or more transistor devices, at least a first, semiconductor layer (8) providing one or more semiconductor channels for the one or more transistor devices; forming, over the first layer, a second layer (10) that defines at least part of a gate dielectric for the one or more transistor devices; creating a pattern in the second layer, without depositing any temporary material onto the second layer; and using the pattern in the second layer to pattern the first layer.

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