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公开(公告)号:US11676888B2
公开(公告)日:2023-06-13
申请号:US16900646
申请日:2020-06-12
Applicant: Flexenable Limited
Inventor: Jan Jongman , Joffrey Dury
IPC: H01L23/48 , H01L23/498 , H01L23/522 , H01L23/528
CPC classification number: H01L23/49822 , H01L23/528 , H01L23/5226
Abstract: A device including a stack of layers defining a first conductor pattern at a first level of the stack and one or more semiconductor channels in respective regions, connecting a pair of parts of the first conductor pattern, and capacitively coupled via a dielectric to a coupling conductor of a second conductor pattern at a second level of the stack. The stack includes at least two insulator patterns over which the first level or second level conductor patterns is formed. A first insulator pattern occupies one or more semiconductor channel regions to provide the dielectric. The second insulator pattern defines one or more windows in the one or more semiconductor channel regions through which the second conductor pattern contacts the first insulator pattern other than via the second insulator pattern. The second insulator pattern overlaps the first insulator pattern outside the one or more semiconductor channel regions.
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公开(公告)号:US20230136653A1
公开(公告)日:2023-05-04
申请号:US17913413
申请日:2021-03-24
Applicant: Flexenable Limited
Inventor: Jan Jongman , Shane Norval
IPC: G02F1/1333 , G02F1/00 , G02F1/1335 , G02F1/1337 , G02F1/1339
Abstract: A device comprising a liquid crystal cell, wherein the liquid crystal cell comprises LC material contained between opposing surfaces of two components; wherein the opposing surfaces intermesh in at least one or more regions of the LC cell.
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公开(公告)号:US11448912B2
公开(公告)日:2022-09-20
申请号:US16757059
申请日:2018-10-18
Applicant: Flexenable Limited
Inventor: William Henry Reeves
IPC: G02F1/1333 , G02F1/1335
Abstract: A manufacturing process for forming a flexible assembly suitable for a curved sensor or display including a stack of layers defining electrical control circuitry is presented. The flexible assembly has a curved configuration and comprises at least first and second components (4, 8) laminated together in a stressed configuration due to their curvature. While the assembly is in said curved configuration at least the first and second components (4, 8) are cut to obtain one or more edges which are aligned to each other.
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公开(公告)号:US20220263036A1
公开(公告)日:2022-08-18
申请号:US17622470
申请日:2020-06-24
Applicant: FLEXENABLE LIMITED
Inventor: Rashmi Sachin BHINTADE , Tomas BACKLUND
Abstract: The disclosed subject matter relates to a dielectric stack that includes a dielectric layer formed from a dielectric material that includes one or more constituent components each having a Tg value of 70° C. or lower and that is annealed at a temperature exceeding the highest Tg value of the one or more constituent components.
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公开(公告)号:US11215868B2
公开(公告)日:2022-01-04
申请号:US17066805
申请日:2020-10-09
Applicant: Flexenable Limited
Inventor: William Reeves , Barry Wild , James Harding
IPC: G02F1/1335 , G02F1/133 , G02F1/1343 , H01L51/05 , G02F1/1368
Abstract: A technique, comprising: removing a protective film from one side of a polarisation filter component to expose a dichroic doped polymer active film or a layer formed in situ on the dichroic doped polymer active film; and thereafter forming in situ on the side of the polarisation filter component one or more functional layers of a liquid crystal device.
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公开(公告)号:US20210181562A1
公开(公告)日:2021-06-17
申请号:US16758954
申请日:2018-10-22
Applicant: Flexenable Limited
Inventor: Barry Wild
IPC: G02F1/1368 , H01L27/28
Abstract: A device, comprising: a liquid crystal cell comprising liquid crystal material; a stack of layers, including one or more organic polymer semiconductor layers, for electrically controlling one or more optical properties of the liquid crystal material; first and second air species barriers between which both said liquid crystal material and said one or more organic polymer semiconductor layers are located; and a third air species barrier between said liquid crystal material and said one or more organic polymer semiconductor layers; wherein the first and second air species barriers exhibit substantially different transmission rates under the same conditions for at least one air species.
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公开(公告)号:US20210157206A1
公开(公告)日:2021-05-27
申请号:US16632814
申请日:2018-07-20
Applicant: Flexenable Limited
Inventor: James Harding
IPC: G02F1/1343 , G02F1/1368
Abstract: A device having a stack of layers defining source and pixel conductors at a first level, gate and common conductors at a second level, semiconductor channels between the source and pixel conductors and gate dielectric capacitively coupling the semiconductor channels to the gate conductors. The pixel and common conductors are configured such that, in use, a change in potential difference between the pixel and common conductors in a pixel region induces a change in one or more optical properties of a liquid crystal material in the pixel region.
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公开(公告)号:US20210118912A1
公开(公告)日:2021-04-22
申请号:US16463670
申请日:2017-11-28
Applicant: FLEXENABLE LIMITED
Inventor: Jan JONGMAN , Brian ASPLIN
Abstract: A technique of producing a stack defining a plurality of TFTs including at least source/drain electrodes and addressing lines at a source/drain level, wherein the method comprises: forming a patterned source/drain level stack comprising at least a first layer over the support substrate and a second layer over the first layer, to define at least said source/drain electrodes and said addressing lines; depositing semiconductor channel material over at least said source/drain electrodes and said addressing lines; and patterning the layer of semiconductor channel material by a patterning process; wherein the material of the first layer is more resistant to removal by said patterning process than the material of said second layer.
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公开(公告)号:US20210036247A1
公开(公告)日:2021-02-04
申请号:US16941749
申请日:2020-07-29
Applicant: Flexenable Limited
Inventor: Josephine Socratous , Neil Murton , Herve Vandekerckhove
IPC: H01L51/05
Abstract: A technique of forming a stack of layers defining electrical circuitry and comprising a plurality of inorganic conductor levels, wherein the method comprises: forming a conductor for at least one of the conductor levels in stages before and after a step of patterning an underlying organic layer.
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公开(公告)号:US20200313103A1
公开(公告)日:2020-10-01
申请号:US16651626
申请日:2018-09-26
Applicant: Flexenable Limited
Inventor: Herve VANDEKERCKHOVE , Joffrey DURY
Abstract: A technique, comprising: forming, over a substrate (2) comprising at least source and drain conductors (4, 6) for one or more transistor devices, at least a first, semiconductor layer (8) providing one or more semiconductor channels for the one or more transistor devices; forming, over the first layer, a second layer (10) that defines at least part of a gate dielectric for the one or more transistor devices; creating a pattern in the second layer, without depositing any temporary material onto the second layer; and using the pattern in the second layer to pattern the first layer.
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