公开(公告)号：US20050145489A1

公开(公告)日：2005-07-07

申请号：US11054053

申请日：2005-02-08

Applicant: Bulent Basol ,  Cyprian Uzoh ,  Halit Yakupoglu ,  Homayoun Talieh

Inventor： Bulent Basol ,  Cyprian Uzoh ,  Halit Yakupoglu ,  Homayoun Talieh

IPC: B23H5/08 ,  C25F3/14 ,  H01L21/288 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  C25B9/00 ,  C25D17/00

CPC classification number: H01L21/32115 ,  B23H5/08 ,  C25F3/14 ,  H01L21/2885 ,  H01L21/32134 ,  H01L21/7684

Abstract: A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.

公开(公告)号：US20050029123A1

公开(公告)日：2005-02-10

申请号：US10637731

申请日：2003-08-08

Applicant: Cyprian Uzoh ,  Homayoun Talieh ,  Bulent Basol ,  Halit Yakupoglu

Inventor： Cyprian Uzoh ,  Homayoun Talieh ,  Bulent Basol ,  Halit Yakupoglu

IPC: H01L21/321 ,  B29C71/02 ,  B05D5/12

CPC classification number: H01L21/32125

Abstract: The methods and systems described provide for radiation assisted material deposition, removal, and planarization at a surface, edge, and/or bevel of a workpiece such as a semiconductor wafer. Exemplary processes performed on a workpiece surface having topographical features include radiation assisted electrochemical material deposition, which produces an adsorbate layer outside of the features to suppress deposition outside of the features and to encourage, through charge conservation, deposition into the features to achieve, for example, a planar surface profile. A further exemplary process is radiation assisted electrochemical removal of material, which produces an adsorbate layer in the features to suppress removal of material from the features and to encourage, through charge conservation, removal of material outside of the features so that, for example, a planar surface profile is achieved.

Abstract translation: 所描述的方法和系统提供了诸如半导体晶片的工件的表面，边缘和/或斜面处的辐射辅助材料沉积，去除和平坦化。 在具有形貌特征的工件表面上执行的示例性工艺包括辐射辅助电化学材料沉积，其在特征之外产生吸附物层以抑制特征外的沉积，并且通过电荷保存沉积到特征中以实现例如 ，平面表面轮廓。 进一步的示例性方法是材料的辐射辅助电化学去除，其在特征中产生吸附物层以抑制材料从特征中的去除并且通过电荷保持除去特征外的材料，从而例如， 实现了平面表面轮廓。