公开(公告)号：US06560136B1

公开(公告)日：2003-05-06

申请号：US09806395

申请日：2001-06-12

Applicant: Jain Raj Kumar

Inventor： Jain Raj Kumar

IPC: G11C1700

CPC classification number: G11C11/4023 ,  G11C11/404

Abstract: A single-port memory cell arrangement includes a multiplicity of single-port memory cells, each having a selection transistor and a memory transistor. The selection transistor has a control terminal connected to a word line, and a load-path connected to a data line. The memory transistor has a control terminal connected to a supply potential, and a load-path connected to the second end of the selection-transistor's load-path. The memory transistor is configured to switch, in response to a signal on the data line, between first and second potentials corresponding to two memory states. These potentials and the supply potential are selected such that first and second ends of the memory-transistor-load-path are at the same potential. The memory cell also includes a controllable switch having a first terminal connected to a supply line, and a second terminal connected to the second end of the memory-transistor-load-path. A single charging device assigned to the single-port memory cells provides providing a precharging potential. From time to time, the charging device recharges a selected memory transistor through the supply line and a selected controllable switch corresponding to that memory transistor.

Abstract translation: 单端口存储单元布置包括多个单端口存储单元，每个具有选择晶体管和存储晶体管。 选择晶体管具有连接到字线的控制端子和连接到数据线的负载路径。 存储晶体管具有连接到电源电位的控制端子和连接到选择晶体管的负载路径的第二端的负载路径。 存储晶体管被配置为响应于数据线上的信号在对应于两个存储器状态的第一和第二电位之间切换。 选择这些电位和电源电位使得存储晶体管负载路径的第一和第二端处于相同的电位。 存储单元还包括具有连接到电源线的第一端子和连接到存储器 - 晶体管负载路径的第二端的第二端子的可控开关。 分配给单端口存储单元的单个充电装置提供预充电潜力。 有时，充电装置通过供电线路和对应于该存储晶体管的选择的可控开关对选定的存储晶体管充电。