公开(公告)号：US20090068066A1

公开(公告)日：2009-03-12

申请号：US12111646

申请日：2008-04-29

Applicant: John Hoffman ,  James A. Benjamin ,  Janet M. Newman ,  John Andrew Moulds ,  David W. Jewell ,  John A. Adams ,  Thomas E. Vomdran ,  Brian L. Ganz

Inventor： John Hoffman ,  James A. Benjamin ,  Janet M. Newman ,  John Andrew Moulds ,  David W. Jewell ,  John A. Adams ,  Thomas E. Vomdran ,  Brian L. Ganz

IPC: B01L3/02

CPC classification number: B01L3/0293 ,  B01L2200/16 ,  B01L2400/0457 ,  G01N35/0099 ,  G01N35/1002 ,  G01N35/109 ,  Y10T436/2575

Abstract: A liquid dispensing device. The liquid dispensing device has a tray for holding a liquid at a relatively constant level. A syringe is used for drawing fluid from the tray. A liquid container containing a liquid is positioned upside-down in the tray. Atmospheric pressure on the liquid in the tray and a vacuum inside the liquid container prevents liquid from draining from the container except when the liquid level in the tray drops to a level sufficient to allow air into the liquid container and to allow fluid to flow from the liquid container into the tray. The fluid flows from the liquid container into the tray until the level of liquid in the tray returns to the relatively constant level. The positioning of the syringe for drawing fluid is simplified in that the level of fluid in the tray is maintained at an approximately constant level despite withdrawal of quantities of fluid from the tray.

Abstract translation: 液体分配装置。 液体分配装置具有用于将液体保持在相对恒定水平的托盘。 注射器用于从托盘吸取流体。 容纳液体的液体容器被倒置在托盘中。 托盘中的液体上的大气压力和液体容器内的真空防止液体从容器中排出，除非当托盘中的液面下降到足以允许空气进入液体容器并允许流体从 液体容器进入托盘。 流体从液体容器流入托盘，直到托盘中的液体水平恢复到相对恒定的水平。 简化了用于拉伸流体的注射器的定位，即尽管从托盘中取出了大量的流体，但托盘中的流体水平保持在大致恒定的水平。

公开(公告)号：US06415140B1

公开(公告)日：2002-07-02

申请号：US09561421

申请日：2000-04-28

Applicant: James A. Benjamin ,  Joseph F. Camerlin ,  David M. Cooper

Inventor： James A. Benjamin ,  Joseph F. Camerlin ,  David M. Cooper

IPC: H04B1702

CPC classification number: H01Q3/24 ,  H01Q21/29

Abstract: A space diversity antenna system provided with dither circuitry in the signal path to one of the antennas to switch a circuit element in and out of the signal path at a high rate. The circuit element can be an amplitude attenuator or a phase changer. This switching results in the substantial elimination of nulling between the two antennas.

Abstract translation: 一种空间分集天线系统，其在到天线之一的信号路径中设置有抖动电路，以高速率将电路元件输入和移出信号路径。 电路元件可以是幅度衰减器或相位变换器。 这种切换导致基本上消除了两个天线之间的归零。

公开(公告)号：US4675980A

公开(公告)日：1987-06-30

申请号：US863312

申请日：1986-05-15

Applicant: Robert W. Lade ,  James A. Benjamin ,  Herman P. Schutten

Inventor： Robert W. Lade ,  James A. Benjamin ,  Herman P. Schutten

IPC: H01L49/02 ,  H01L21/33 ,  H01L29/70 ,  H01L31/10 ,  H01L45/00 ,  H01L21/467 ,  H01L21/475 ,  H01L27/14

CPC classification number: H01L45/00 ,  Y10S438/957 ,  Y10T29/413

Abstract: MOMOM structural geometry and fabrication techniques are is disclosed. First and second metal layer strips (6 and 10) are supported on an insulating substrate (4) and have vertically overlapped portions sandwiched between insulating layers (8, 12). A generally vertical side (18) is defined through the layers to the substrate to expose vertical edges (20, 24) of the metal layers which are oxidized (32, 34) and covered by a third metal layer (44) extending therebetween. In the preferred embodiment, the middle insulating layer (8) is undercut (28), oxidized (36, 40), and filled with metallization (50), to provide a vertical rectilinear conduction path.

Abstract translation: 公开了MOMOM结构几何形状和制造技术。 第一和第二金属层条（6和10）被支撑在绝缘基板（4）上并且具有夹在绝缘层（8,12）之间的垂直重叠部分。 大体上垂直的侧面（18）被限定穿过衬底到衬底，以暴露金属层的垂直边缘（20,24），这些金属层被氧化（32,34）并被在其间延伸的第三金属层（44）覆盖。 在优选实施例中，中间绝缘层（8）是底切（28），被氧化（36,40）并填充有金属化（50），以提供垂直的直线导电路径。

公开(公告)号：US4633281A

公开(公告)日：1986-12-30

申请号：US618431

申请日：1984-06-08

Applicant: James A. Benjamin ,  Robert W. Lade ,  Herman P. Schutten

Inventor： James A. Benjamin ,  Robert W. Lade ,  Herman P. Schutten

IPC: H01L21/337 ,  H01L29/08 ,  H01L29/10 ,  H01L29/808 ,  H01L29/80

CPC classification number: H01L29/1058 ,  H01L29/0843 ,  H01L29/808

Abstract: A power JFET (2) has a common drift region (4) between a pair of spaced first and second stacks (6, 8) of alternating conductivity type layers (10-14 and 15-19) forming a plurality of channels (11, 13, 16 and 18). The JFET has an ON state conducting bidirectional current horizontally through the common drift region and the channels. The channels are stacked vertically, and the JFET has an OFF state blocking current flow through the channels due to vertical depletion pinch-off. Field shaping and high blocking voltage capability are provided. Particular main terminal and gate structure is disclosed.

Abstract translation: 功率JFET（2）在交替导电类型层（10-14和15-19）的一对隔开的第一和第二堆叠（6,8）之间具有共同的漂移区域（4），形成多个通道（11， 13，16和18）。 JFET具有通过公共漂移区域和通道水平地导通双向电流的导通状态。 通道垂直堆叠，并且由于垂直耗尽夹断，JFET具有截止通过通道的截止电流的截止状态。 提供了现场整形和高阻断电压能力。 公开了特定的主终端和门结构。

公开(公告)号：US4571606A

公开(公告)日：1986-02-18

申请号：US390484

申请日：1982-06-21

Applicant: James A. Benjamin ,  Robert W. Lade ,  Herman P. Schutten ,  Stanley V. Jaskolski

Inventor： James A. Benjamin ,  Robert W. Lade ,  Herman P. Schutten ,  Stanley V. Jaskolski

IPC: H01L27/102 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/0653 ,  H01L27/1024 ,  H01L29/7801 ,  H01L29/7809 ,  H01L29/7816

Abstract: Lateral FET structure is disclosed with an insulative region such as porous silicon filled with oxide formed in the drift region to divert the drift region current path and increase the length thereof to afford higher OFF state blocking voltage without increasing lateral dimensions. Combinations involving bidirectional power switching structures are also disclosed, as well as a multicell matrix array.

Abstract translation: 公开了一种绝缘区域，例如填充有在漂移区域中形成的氧化物的多孔硅的绝缘区域，以使漂移区域电流路径转移并增加其长度以提供更高的截止状态阻挡电压而不增加横向尺寸。 还公开了涉及双向功率开关结构的组合，以及多单元矩阵阵列。

公开(公告)号：US4553151A

公开(公告)日：1985-11-12

申请号：US421931

申请日：1982-09-23

Applicant: Herman P. Schutten ,  Robert W. Lade ,  James A. Benjamin

Inventor： Herman P. Schutten ,  Robert W. Lade ,  James A. Benjamin

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78 ,  H01L29/10 ,  H01L27/02

CPC classification number: H01L29/407 ,  H01L29/0653 ,  H01L29/41741 ,  H01L29/7809 ,  H01L29/7831

Abstract: Lateral FET structure is disclosed for bidirectional power switching, including AC application. Voltage blocking capability is enhanced by field shaping in the drift region. In the OFF state, depletion from a channel region junction and from a field shaping region junction spread toward each other through the drift region to straighten out field lines and prevent curvature crowding of field lines at edges of notch means extending into the drift region and separating a pair of source regions and a pair of channel regions.

Abstract translation: 公开了用于双向功率切换的横向FET结构，包括AC应用。 通过漂移区域中的场整形来增强电压阻塞能力。 在OFF状态下，从沟道区域结和从场成形区域结的耗尽通过漂移区向彼此扩展，以使场线平直，并且防止在延伸到漂移区域的陷波装置的边缘处的场线的曲率拥挤，并且分离 一对源极区和一对沟道区。

公开(公告)号：US4541001A

公开(公告)日：1985-09-10

申请号：US421933

申请日：1982-09-23

Applicant: Herman P. Schutten ,  James A. Benjamin ,  Robert W. Lade

Inventor： Herman P. Schutten ,  James A. Benjamin ,  Robert W. Lade

IPC: H01L21/761 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L29/41741 ,  H01L21/761 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/7809 ,  H01L29/7831

Abstract: Bidirectional power FET structure is disclosed with high OFF state voltage blocking capability. A shielding electrode is insulated between first and second gate electrodes in a notch between laterally spaced source regions and channel regions joined by a common drift region around the bottom of the notch. The shielding electrode is ohmically connected to the substrate containing the common drift region to be at the same potential level thereof and within a single junction drop of a respective main electrode across the junction between the respective channel containing region and drift region. The steering diode function for referencing the shielding electrode is performed by junctions already present in the integrated structure, eliminating the need for discrete dedicated steering diodes. The shielding electrode prevents the electric field gradient toward the gate electrode on one side of the notch from inducing depletion in the drift region along the opposite side of the notch. This prevents unwanted inducement of conduction channels in the drift region during the OFF state of the FET.

Abstract translation: 公开了具有高OFF状态电压阻断能力的双向功率FET结构。 屏蔽电极在横向间隔开的源极区域之间的凹口中的第一和第二栅电极之间绝缘，并且通过围绕凹口底部的公共漂移区域连接的沟道区域之间被隔离。 屏蔽电极欧姆连接到包含公共漂移区的衬底处于相同的电位水平，并且在相应的主电极的跨越相应通道容纳区域和漂移区域之间的结点的单个结滴内。 用于参考屏蔽电极的转向二极管功能是通过已经存在于集成结构中的结来实现的，从而不再需要离散的专用转向二极管。 屏蔽电极防止在凹口一侧的栅电极的电场梯度导致沿着凹口的相对侧的漂移区域的耗尽。 这防止了在FET的OFF状态期间在漂移区域中导电通道的不期望的诱导。

公开(公告)号：US06503320B1

公开(公告)日：2003-01-07

申请号：US09942285

申请日：2001-08-27

Applicant: Janet Newman ,  Jon A. Christopher ,  Brian L. Ganz ,  James A. Benjamin

Inventor： Janet Newman ,  Jon A. Christopher ,  Brian L. Ganz ,  James A. Benjamin

IPC: C30B3118

CPC classification number: C30B33/00 ,  C30B29/58 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: A blocking device for remote, selective blocking of a cold stream used in a protein crystal annealing process during X-ray protein crystallography includes a blocking member adapted to be selectively moved between at least a blocking position where the blocking member blocks the cold stream and a non-blocking position where the blocking member does not block the cold stream, and an actuation mechanism adapted to impart movement to the blocking member to cause the blocking member to be selectively moved between at least the blocking position and the non-blocking position.

Abstract translation: 用于在X射线蛋白质晶体学中用于蛋白质晶体退火过程中用于远程，选择性阻断冷流的阻断装置包括阻挡构件，其适于选择性地在至少阻塞构件阻挡冷流的阻挡位置和 非阻塞位置，其中阻挡构件不阻挡冷流;以及致动机构，其适于向所述阻挡构件施加移动以使所述阻挡构件在至少所述阻挡位置和所述非阻挡位置之间选择性地移动。

公开(公告)号：US5999139A

公开(公告)日：1999-12-07

申请号：US924418

申请日：1997-08-27

Applicant: James A. Benjamin ,  David A. Haessig, Jr. ,  Peter Lindsay

Inventor： James A. Benjamin ,  David A. Haessig, Jr. ,  Peter Lindsay

IPC: H01Q1/12 ,  H01Q3/00

CPC classification number: H01Q1/125 ,  H01Q1/1257

Abstract: A two-axis satellite antenna mounting and tracking assembly including a universal joint for mounting the antenna to support structure. A pair of linear actuators offset at 90.degree. to each other about the universal joint are operated in full-on/full-off fashion to control the azimuth and elevation orientations of the antenna. Satellite tracking is effected by maximizing received signal strength.

Abstract translation: 一个双轴卫星天线安装和跟踪组件，包括用于将天线安装到支撑结构的万向节。 一对围绕万向接头彼此以90°偏移的线性致动器以全开/全关方式工作，以控制天线的方位角和仰角。 通过最大化接收信号强度来实现卫星跟踪。

公开(公告)号：US4612465A

公开(公告)日：1986-09-16

申请号：US734031

申请日：1985-05-13

Applicant: Herman P. Schutten ,  Robert W. Lade ,  James A. Benjamin

Inventor： Herman P. Schutten ,  Robert W. Lade ,  James A. Benjamin

IPC: H01L21/306 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H03K17/687

CPC classification number: H01L29/4236 ,  H01L21/306 ,  H01L29/0642 ,  H01L29/7825

Abstract: Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Split gate electrodes in the notch proximate the channels control bidirectional conduction, and are at non-common potentials in the OFF state to increase breakdown voltage. Self-shielding of the gates is also disclosed to further increase OFF state breakdown voltage.

Abstract translation: 公开了用于双向功率切换的横向FET结构，包括AC应用。 凹口从顶部主表面向下延伸以分离左和右源极区域以及左右沟道区域，并且引导位于凹口底部周围的通道之间的漂移区域电流路径。 在通道附近的切口中的分离栅极电极控制双向导通，并且处于断开状态的非公共电位以增加击穿电压。 还公开了栅极的自屏蔽以进一步增加OFF状态击穿电压。