公开(公告)号：US20080156789A1

公开(公告)日：2008-07-03

申请号：US12029777

申请日：2008-02-12

Applicant: Andrew Devey ,  James D. Parsons

Inventor： Andrew Devey ,  James D. Parsons

IPC: H05B3/06 ,  H05B3/68

CPC classification number: B23K1/018 ,  B23K2101/40 ,  H01L24/75 ,  H01L2924/14 ,  H01L2924/00

Abstract: The present platen enables a component such as a surface-mount device to be held in close proximity to a contact heating source via vacuum suction. The platen comprises top and bottom thermally conductive surfaces with the top surface held in close proximity to the contact heating source, a through-hole which extends between the surfaces, and at least one groove recessed into the top surface which runs from a portion of the top surface that extends beyond the contact heating source to the through-hole, such that an applied vacuum is conveyed to the bottom surface via the grooves and through-hole. The bottom surface may include a rim around its perimeter; vacuum suction conveyed via the grooves and through-hole can hold a component to be heated against the rim, or within the recessed portion. The platen can be tailored for use with various component types, including PBGA and QFP SMDs.

Abstract translation: 本压板使得诸如表面安装装置的部件能够通过真空吸附保持紧靠接触加热源。 压板包括顶部和底部导热表面，顶表面保持紧邻接触加热源，在表面之间延伸的通孔和凹入到顶表面中的至少一个凹槽，该凹槽从一部分 顶表面延伸超过接触加热源到通孔，使得施加的真空经由凹槽和通孔传送到底表面。 底表面可以包括围绕其周边的边缘; 通过凹槽和通孔输送的真空吸力可以将待加热的部件保持在边缘上，或者在凹部内。 压板可以定制用于各种组件类型，包括PBGA和QFP SMD。

公开(公告)号：US07021136B2

公开(公告)日：2006-04-04

申请号：US10975644

申请日：2004-10-27

Applicant: Craig A. Vincze ,  James Gibson ,  James D. Parsons ,  Thomas E. Fehlman

Inventor： Craig A. Vincze ,  James Gibson ,  James D. Parsons ,  Thomas E. Fehlman

IPC: G01F1/68

CPC classification number: G01F1/692 ,  G01F1/6845 ,  G01F1/6847 ,  G01F5/00

Abstract: A mass flow meter employs discrete chip-type temperature sensors to sense a fluid flow rate. The sensor can be a semiconductor chip such as SiC or silicon, or thin film tungsten on an AlN substrate. The sensors can be distributed symmetrically with respect to the conduit through which the fluid flows, and can be connected in a four-sensor bridge circuit for accurate flow rate monitoring. An output from the mass flow meter can be used to control the fluid flow.

Abstract translation: 质量流量计采用分立的片式温度传感器来感测流体流速。 该传感器可以是诸如SiC或硅的半导体芯片，或AlN衬底上的薄膜钨。 传感器可以相对于流体流过的管道对称地分布，并且可以连接在四传感器桥接电路中以进行精确的流量监测。 可以使用质量流量计的输出来控制流体流量。

公开(公告)号：US06649994B2

公开(公告)日：2003-11-18

申请号：US10175940

申请日：2002-06-20

Applicant: James D. Parsons

Inventor： James D. Parsons

IPC: H01L31058

CPC classification number: G01K7/16 ,  H01C7/022 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1−xN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.

Abstract translation: 高温混合电路结构包括温度敏感器件，其包括通过电极连接到物理地结合到AlN管芯的导电安装层的SiC，AlN和/或Al x Ga 1-x N（x> 0.69）。 模具，温度敏感装置和安装层（可以是W，WC或W2C）的温度系数彼此在1.06以内。 安装层可以完全由W，WC或W2C粘合剂层组成，或具有覆盖金属化层的粘合剂层，其热膨胀系数不大于粘合层的约3.5倍。 该装置可以用反应的硼硅酸盐混合物包封，具有或不具有上模具，其有助于保持引线并增加结构完整性。 应用包括温度传感器，压力传感器，化学传感器，以及高温和高功率电子电路。

公开(公告)号：US6150246A

公开(公告)日：2000-11-21

申请号：US251897

申请日：1999-02-19

Applicant: James D. Parsons

Inventor： James D. Parsons

IPC: H01L29/73 ,  H01L21/04 ,  H01L21/28 ,  H01L21/331 ,  H01L21/338 ,  H01L21/822 ,  H01L23/49 ,  H01L27/04 ,  H01L29/45 ,  H01L29/47 ,  H01L29/74 ,  H01L29/749 ,  H01L29/78 ,  H01L29/812 ,  H01L29/861 ,  H01L29/872 ,  H01L21/44

CPC classification number: H01L24/01 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01059 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/3025

Abstract: Metallic osmium on SiC (either .beta. or .alpha.) forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction having essentially unchanged operating characteristics to at least 1050.degree. C. and Schottky diodes that remain operable to 1175.degree. C. and a barrier height over 1.5 ev. On p-type SiC, Os forms an ohmic contact with specific contact resistance of

Abstract translation: SiC（β或α）上的金属锇形成一个保持牢固地附着在SiC表面上的接触，并形成有效的屏障，防止导电金属的扩散。 在n型SiC上，Os形成突变的肖特基整流结，具有基本上不变的操作特性至少为1050℃，肖特基二极管保持可操作至1175℃，势垒高度超过1.5ev。 在p型SiC上，Os形成具有<10-4 ohm-cm2的特定接触电阻的欧姆接触。 通过在TiC层上沉积WC层，随后是金属W层，形成与SiC衬底上的TiC层的欧姆和整流接触。 这样的触点在至少1150℃是稳定的。电极直接或通过诸如Pt或PtAu合金之类的保护结合层连接到触点。

公开(公告)号：US4215788A

公开(公告)日：1980-08-05

申请号：US932818

申请日：1978-08-10

Applicant: James D. Parsons

Inventor： James D. Parsons

IPC: B60P3/24 ,  B65D88/62 ,  B65D25/06

CPC classification number: B65D90/004 ,  B60P3/246 ,  B65D88/62 ,  B65D90/046

Abstract: A flexible diaphragm can be moved to line opposite surfaces of a vehicle so that incompatible fluids alternately can be transported in the vehicle without the need for cleaning it. The edge of the diaphragm may be held against the inside surface of the vehicle container by a series of aligned clamps that are independently movable. The terminal edge of the diaphragm is enclosed in a transient pressure absorbing chamber defined in part by the under surface of the clamps which enables the clamps to exert increased sealing pressure on the diaphragm during the transient pressure surges caused by movement of the liquid when the vehicle changes speed or direction suddenly.

Abstract translation: 柔性隔膜可以移动到车辆的相对表面，使得不相容的流体交替地可以在车辆中运输而不需要清洁它。 隔膜的边缘可以通过可独立移动的一系列对准的夹具来抵靠车辆容器的内表面。 隔膜的末端边缘封闭在暂时的压力吸收室中，部分由夹具的下表面限定，这使得夹具能够在车辆运动时引起的瞬态压力波动期间对隔膜施加增加的密封压力 突然改变速度或方向。

公开(公告)号：US20100219341A1

公开(公告)日：2010-09-02

申请号：US12546080

申请日：2009-08-24

Applicant: JAMES D. PARSONS ,  Andrew D. Devey

Inventor： JAMES D. PARSONS ,  Andrew D. Devey

IPC: G01J5/00 ,  H01L31/024 ,  G01K13/00

CPC classification number: G01R21/04 ,  G01J1/04 ,  G01J1/0474 ,  G01J1/4257

Abstract: A power and energy (PE) meter includes a sensor head comprising a sensor which absorbs EM radiation that impinges on it, and a heat sink with which the sensor is in thermal contact. The heat sink includes a through-hole behind the sensor which allows at least some of the EM radiation which is not absorbed by the sensor to pass through the heat sink without being absorbed. A means of applying mechanical pressure is preferably employed to hold the sensor in thermal contact with the heat sink. A capture head and shroud may be mounted behind and physically separate from the sensor head, and arranged to absorb at least some of the radiation which is not absorbed by the sensor head.

Abstract translation: 功率和能量（PE）仪表包括传感器头，传感器头包括吸收EM辐射的传感器，以及与传感器热接触的散热器。 散热器包括传感器后面的通孔，其允许不被传感器吸收的至少一些EM辐射通过散热器而不被吸收。 优选采用施加机械压力的手段来保持传感器与散热器的热接触。 捕获头和护罩可以安装在传感器头后面并物理上与传感器头分离，并且布置成吸收至少一些不被传感器头吸收的辐射。

公开(公告)号：US20080265444A1

公开(公告)日：2008-10-30

申请号：US12107181

申请日：2008-04-22

Applicant: James D. Parsons ,  Gregg B. Kruaval

Inventor： James D. Parsons ,  Gregg B. Kruaval

IPC: H01L23/29 ,  H05K3/00 ,  H01L21/56

CPC classification number: H01L23/291 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An aluminum nitride (AlN) thin-film is applied over thin-film metallic circuitry such as an environmental sensor, on the side edges of electrode pads, and/or over some or all of the surface area of a substrate. The thin-film acts to protect the encapsulated structures from exposure to oxidation and from reducing and vacuum environments, electrically insulates the encapsulated structures from other structures, and helps to securely adhere the structures to the substrate surface. The AlN thin-film can also enable multiple IC layers to be stacked on top of each other, with AlN thin-film interlayers employed between IC layers such that each IC layer is separated and electrically insulated from adjacent layers.

Abstract translation: 在诸如环境传感器的薄膜金属电路上，在电极焊盘的侧边缘上和/或在衬底的一些或全部表面区域上施加氮化铝（AlN）薄膜。 薄膜起到保护封装结构免受暴露于氧化和减少和真空环境的作用，使封装的结构与其他结构电绝缘，并有助于将结构牢固地粘附到衬底表面。 AlN薄膜还可以使多个IC层彼此层叠，使用在IC层之间的AlN薄膜夹层，使得每个IC层被分离并与相邻层电绝缘。

公开(公告)号：US07224256B2

公开(公告)日：2007-05-29

申请号：US11288490

申请日：2005-11-28

Applicant: James D. Parsons

Inventor： James D. Parsons

IPC: H01C3/04 ,  H01C7/02

CPC classification number: G01F1/692 ,  G01F23/248 ,  G01K7/18 ,  G01K7/183 ,  H01C3/04 ,  H01C3/12 ,  H01C7/006 ,  H01C17/075 ,  H01C17/12 ,  H05B3/265 ,  H05B2203/003

Abstract: A sensor system has an AlN substrate, a W layer on the substrate, a signal source adapted to apply an electrical actuating signal to the W layer, and a sensor adapted to sense the response of the W layer. The W layer can comprise a thin film, with various types of optional protective layers over the film. Applications include sensing temperature, fluid flow rates, fluid levels, pressure and chemical environments. For a planar heater, the W layer comprises a plurality of conductive strands distributed on the substrate, with the strands generally parallel and serpentine shaped for a rectangular substrate, and extending along respective lines of longitude that merge at opposite poles of the substrate for a circular substrate.

Abstract translation: 传感器系统具有AlN衬底，衬底上的W层，适于向W层施加电致动信号的信号源以及适于感测W层的响应的传感器。 W层可以包括薄膜，在膜上具有各种类型的可选保护层。 应用包括感测温度，流体流速，流体水平，压力和化学环境。 对于平面加热器，W层包括分布在基板上的多个导电股线，其中股线基本上平行于蛇形形状，用于矩形基板，并且沿着经线的相应线延伸，在基板的相对极处合并为圆形 基质。

公开(公告)号：US06989574B2

公开(公告)日：2006-01-24

申请号：US10753476

申请日：2004-01-07

Applicant: James D. Parsons

Inventor： James D. Parsons

IPC: H01L29/82

CPC classification number: G01K7/16 ,  H01C7/022

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1-xN(x>0.69) connected via electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer, which can be a thin film of W, WC or W2C less than 10 micrometers thick, have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. Applications include temperature sensors, pressure sensors, chemical sensors and high temperature and high power electronic circuits. Without the mounting layer, a thin film piezoelectric layer of SiC, AlN and/or AlxGa1-xN(x>0.69), less than 10 micrometers thick, can be secured to the die.

Abstract translation: 高温混合电路结构包括温度敏感器件，其包括通过电极连接的SiC，AlN和/或Al x Ga 1-x N（x> 0.69） 物理地结合到AlN管芯上的导电安装层。 可以是小于10微米厚的W，WC或W 2 C薄膜的管芯，温度敏感器件和安装层的温度系数彼此在1.06以内。 安装层可以完全由W，WC或W 2 C粘合剂层组成，或具有覆盖金属化的粘合剂层，其具有不大于粘合层的约3.5倍的热膨胀系数 。 应用包括温度传感器，压力传感器，化学传感器和高温高功率电子电路。 没有安装层，小于10微米厚的SiC，AlN和/或Al x Ga 1-x N（x> 0.69）的薄膜压电层， 可以固定在模具上。

公开(公告)号：US06911714B2

公开(公告)日：2005-06-28

申请号：US10016578

申请日：2001-11-01

Applicant: James D. Parsons ,  B. Leo Kwak

Inventor： James D. Parsons ,  B. Leo Kwak

IPC: H01L21/04 ,  H01L21/58 ,  H01L23/29 ,  H01L29/15 ,  H01L31/58

CPC classification number: H01L21/0485 ,  H01L21/0495 ,  H01L23/291 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/2919 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/351 ,  Y10S438/931 ,  H01L2924/00 ,  H01L2924/3512

Abstract: A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protective layer above the operating temperature (over 1000° C., preferably >1200° C.). The glass is preferably 30-50% B2O3/70-50% SiO2, formed by reacting a mixed powder, slurry or paste of the components at 460°-1000° C. preferably about 700° C. The die can be mounted on the ceramic substrate using the BSG as an adhesive. Metal conductors on the ceramic substrate are also protected by the BSG. The preferred ceramic substrate is AlN but SiC/AlN or Al2O3 can be used.

Abstract translation: 具有Os和/或W / WC / TiC触点和金属导体的SiC模具使用在远低于器件工作温度以下的温度下形成的硼硅酸盐（BSG）玻璃单独或陶瓷衬底上封装，但用作 稳定的保护层高于工作温度（超过1000℃，优选> 1200℃）。 玻璃优选为30-50％的B 2 O 3 / 70-50％SiO 2，通过使混合的粉末，浆料或 组分的糊料在460℃-1000℃，优选约700℃。可以使用BSG作为粘合剂将模具安装在陶瓷基板上。 陶瓷基板上的金属导体也受到BSG的保护。 优选的陶瓷衬底是AlN，但可以使用SiC / AlN或Al 2 O 3 3。