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1.发明授权Ferroelectrics and ferromagnetics for noise isolation in integrated circuits, packaging, and system architectures 有权用于集成电路，封装和系统架构中的噪声隔离的铁电和铁磁体公开(公告)号：US07977758B2
公开(公告)日：2011-07-12
申请号：US12214696
申请日：2008-06-20
Applicant: Markondeya Raj Pulugurtha , Madhaven Swaminathan , Mahadevan Krishna Iyer , Rao Tummala , Isaac Robin Abothu , Jin Hyun Hwang
Inventor： Markondeya Raj Pulugurtha , Madhaven Swaminathan , Mahadevan Krishna Iyer , Rao Tummala , Isaac Robin Abothu , Jin Hyun Hwang
IPC: H01L29/82
CPC classification number: H05K9/0083
Abstract: Disclosed are ferroelectric and ferromagnetic noise isolation structures that reduce electromagnetic interference and noise in integrated circuit devices and system architectures. Representative structures comprise two or more devices that are vertically disposed relative to one another, and a thin ferroelectric or ferromagnetic film layer disposed between the respective devices that isolates electromagnetic energy coupling from one device to another.
Abstract translation: 公开了在集成电路器件和系统架构中降低电磁干扰和噪声的铁电和铁磁噪声隔离结构。 代表性结构包括相对于彼此垂直设置的两个或更多个器件，以及设置在各个器件之间的薄铁电或铁磁膜层，其将电磁能量耦合从一个器件隔离到另一个器件。
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2.发明授权Passive electrical devices and methods of fabricating passive electrical devices 有权无源电器件和无源电器件的制造方法公开(公告)号：US08866018B2
公开(公告)日：2014-10-21
申请号：US12352411
申请日：2009-01-12
Applicant: Pranabes K. Pramanik , Yuji Kageyama , Fujio Kuwako , Jin Hyun Hwang
Inventor： Pranabes K. Pramanik , Yuji Kageyama , Fujio Kuwako , Jin Hyun Hwang
CPC classification number: H01G4/18 , H01G4/203 , H01G4/33 , H05K1/162 , H05K2201/0166 , H05K2201/0195 , H05K2201/0355 , H05K2201/09309 , Y10T156/10
Abstract: A thin laminate passive electrical device, such as, a capacitor, and a method of fabricating a thin laminate passive electrical device are provided. The passive electrical device includes two conductors, for example, copper foil conductors, separated by a dielectric having a first layer of a first material having a softening point temperature greater than a first temperature and a first layer of a second material having a softening point temperature less than the first temperature. The first temperature may be at least 150 degrees C. or higher. By providing a first layer having a higher softening point material, shorting across the conductors, that can be promoted by the fabrication process, is prevented. Methods of fabricating passive electrical devices are also disclosed.
Abstract translation: 提供了一种诸如电容器的薄层压无源电器件以及制造薄层压无源电器件的方法。 无源电器件包括两个导体，例如铜箔导体，由具有软化点温度大于第一温度的第一材料的第一层和第一材料的电介质隔开，第一层的第一材料具有软化点温度 小于第一温度。 第一温度可以为至少150摄氏度或更高。 通过提供具有较高软化点材料的第一层，可以防止通过制造工艺促进导体的短路。 还公开了制造无源电器件的方法。
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3.发明申请PASSIVE ELECTRICAL DEVICES AND METHODS OF FABRICATING PASSIVE ELECTRICAL DEVICES 有权被动电气设备和制造被动电气设备的方法公开(公告)号：US20100175914A1
公开(公告)日：2010-07-15
申请号：US12352411
申请日：2009-01-12
Applicant: Pranabes K. PRAMANIK , Yuji KAGEYAMA , Fujio KUWAKO , Jin Hyun HWANG
Inventor： Pranabes K. PRAMANIK , Yuji KAGEYAMA , Fujio KUWAKO , Jin Hyun HWANG
CPC classification number: H01G4/18 , H01G4/203 , H01G4/33 , H05K1/162 , H05K2201/0166 , H05K2201/0195 , H05K2201/0355 , H05K2201/09309 , Y10T156/10
Abstract: A thin laminate passive electrical device, such as, a capacitor, and a method of fabricating a thin laminate passive electrical device are provided. The passive electrical device includes two conductors, for example, copper foil conductors, separated by a dielectric having a first layer of a first material having a softening point temperature greater than a first temperature and a first layer of a second material having a softening point temperature less than the first temperature. The first temperature may be at least 150 degrees C. or higher. By providing a first layer having a higher softening point material, shorting across the conductors, that can be promoted by the fabrication process, is prevented. Methods of fabricating passive electrical devices are also disclosed.
Abstract translation: 提供了一种诸如电容器的薄层压无源电器件以及制造薄层压无源电器件的方法。 无源电器件包括两个导体，例如铜箔导体，由具有软化点温度大于第一温度的第一材料的第一层和第一材料的电介质隔开，第一层的第一材料具有软化点温度 小于第一温度。 第一温度可以为至少150摄氏度或更高。 通过提供具有较高软化点材料的第一层，可以防止通过制造工艺促进导体的短路。 还公开了制造无源电器件的方法。
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4.发明申请Ferroelectrics and ferromagnetics for noise isolation in integrated circuits, packaging, and system architectures 有权用于集成电路，封装和系统架构中的噪声隔离的铁电和铁磁体公开(公告)号：US20100103639A1
公开(公告)日：2010-04-29
申请号：US12214696
申请日：2008-06-20
Applicant: Markondeya Raj Pulugurtha , Jin Hyun Hwang , Isaac Robin Abothu , Mahadevan Krishna Iyer , Rao Tummala , Madhavan Swaminathan
Inventor： Markondeya Raj Pulugurtha , Jin Hyun Hwang , Isaac Robin Abothu , Mahadevan Krishna Iyer , Rao Tummala , Madhavan Swaminathan
IPC: H05K9/00
CPC classification number: H05K9/0083
Abstract: Disclosed are ferroelectric and ferromagnetic noise isolation structures that reduce electromagnetic interference and noise in integrated circuit devices and system architectures. Representative structures comprise two or more devices that are vertically disposed relative to one another, and a thin ferroelectric or ferromagnetic film layer disposed between the respective devices that isolates electromagnetic energy coupling from one device to another.
Abstract translation: 公开了在集成电路器件和系统架构中降低电磁干扰和噪声的铁电和铁磁噪声隔离结构。 代表性结构包括相对于彼此垂直设置的两个或更多个器件，以及设置在各个器件之间的薄铁电或铁磁膜层，其将电磁能量耦合从一个器件隔离到另一个器件。
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