Abstract:
Devices for switching or tuning of an electrical circuit comprise a liquid metal (LM) drop confined inside a sealed cavity. The cavity is formed at least partially inside a microelectronics layered structure which includes metal, dielectric and semiconductor layers. The microelectronics layered structure may be prepared using a VLSI/CMOS technology. Some of the VLSI/CMOS metal layers or metalized vias may be used for conduction lines contacted by the LM drop or as RF transmission lines opened or closed by the LM drop.