公开(公告)号：US20060205195A1

公开(公告)日：2006-09-14

申请号：US11159264

申请日：2005-06-23

Applicant: Rajesh Malhan ,  Yuichi Takeuchi ,  Irina Nikitina ,  Konstantin Vassilevski ,  Nicholas Wright ,  Alton Horsfall

Inventor： Rajesh Malhan ,  Yuichi Takeuchi ,  Irina Nikitina ,  Konstantin Vassilevski ,  Nicholas Wright ,  Alton Horsfall

IPC: H01L21/28

CPC classification number: H01L29/7802 ,  H01L21/0485 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7395

Abstract: A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction between the substrate and the deposited metal that forms a modified layer in the substrate having modified properties different than the substrate, and by-products composed of a silicide and a nanocrystalline graphite layer; selectively etching the substrate to remove one or more of the by-products of the solid state chemical reaction from a surface of the substrate; and depositing a metal film composed of a transition group metal over the modified layer on the substrate to form the ohmic contact. The modified layer permits formation of the ohmic contact without high temperature annealing after depositing the metal film.

Abstract translation: 在由宽带隙半导体材料构成的衬底上形成欧姆接触的方法包括：在衬底上沉积过渡金属组金属; 在高温下使基板退火，从而在基板和沉积金属之间产生固态化学反应，所述金属在衬底中形成改性的特性，其具有不同于衬底的改性，以及由硅化物和纳米晶体石墨层组成的副产物 ; 选择性地蚀刻所述基板以从所述基板的表面去除所述固态化学反应的一种或多种副产物; 以及在所述基板上在所述改性层上沉积由过渡金属组成的金属膜以形成欧姆接触。 在沉积金属膜之后，改性层允许形成欧姆接触而不进行高温退火。

公开(公告)号：US20060273323A1

公开(公告)日：2006-12-07

申请号：US11448138

申请日：2006-06-07

Applicant: Takeo Yamamoto ,  Malhan Kumar ,  Yuuichi Takeuchi ,  Konstantin Vassilevski ,  Nicholas Wright

Inventor： Takeo Yamamoto ,  Malhan Kumar ,  Yuuichi Takeuchi ,  Konstantin Vassilevski ,  Nicholas Wright

IPC: H01L31/0312

CPC classification number: H01L21/0485 ,  H01L29/1608

Abstract: A semiconductor device includes: a SiC substrate; a silicide layer disposed on the SiC substrate; and a carbide layer disposed on the silicide layer. The silicide layer includes a first metal, and the carbide layer includes a second metal. The first metal is Ni or Ni alloy, and the second metal is Ti, Ta or W. The device provides excellent ohmic contact and high quality surface metallization construction.

Abstract translation: 半导体器件包括：SiC衬底; 设置在所述SiC衬底上的硅化物层; 以及设置在硅化物层上的碳化物层。 硅化物层包括第一金属，并且碳化物层包括第二金属。 第一种金属是Ni或Ni合金，第二种金属是Ti，Ta或W.该器件提供了优异的欧姆接触和高品质的表面金属化结构。

公开(公告)号：US07141498B2

公开(公告)日：2006-11-28

申请号：US11159264

申请日：2005-06-23

Applicant: Rajesh Kumar Malhan ,  Yuichi Takeuchi ,  Irina Nikitina ,  Konstantin Vassilevski ,  Nicholas Wright ,  Alton Horsfall

Inventor： Rajesh Kumar Malhan ,  Yuichi Takeuchi ,  Irina Nikitina ,  Konstantin Vassilevski ,  Nicholas Wright ,  Alton Horsfall

IPC: H01L21/44

CPC classification number: H01L29/7802 ,  H01L21/0485 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7395

Abstract: A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction between the substrate and the deposited metal that forms a modified layer in the substrate having modified properties different than the substrate, and by-products composed of a silicide and a nanocrystalline graphite layer; selectively etching the substrate to remove one or more of the by-products of the solid state chemical reaction from a surface of the substrate; and depositing a metal film composed of a transition group metal over the modified layer on the substrate to form the ohmic contact. The modified layer permits formation of the ohmic contact without high temperature annealing after depositing the metal film.