公开(公告)号：US20040212308A1

公开(公告)日：2004-10-28

申请号：US10464559

申请日：2003-06-19

Applicant: LG. Philips LCD., Ltd. ,  SangNong Enterprise Co., Ltd. ,  Young-Jong LEE

Inventor： Hong Bae Park

IPC: H01J061/30 ,  H01J017/16

CPC classification number: H01J61/305 ,  H01J9/02 ,  H01J65/00

Abstract: A flat luminescent lamp and a method for manufacturing the same are disclosed in the present invention. More specifically, a flat luminescent lamp includes first and second substrates each having a plurality of grooves in sides which the first and second substrates face into each other, first and second electrodes in the grooves, first and second phosphor layers in the first and second substrates including the first and second electrodes, respectively, and a frame for sealing the first and second substrates.

Abstract translation: 扁平发光灯及其制造方法在本发明中公开。 更具体地，平板发光灯包括第一和第二基板，每个基板具有第一和第二基板彼此面对的多个槽，第一和第二基板中的第一和第二电极， 分别包括第一和第二电极以及用于密封第一和第二基板的框架。

公开(公告)号：US20040021141A1

公开(公告)日：2004-02-05

申请号：US10631331

申请日：2003-07-31

Applicant: LG. Philips LCD., LTD.

Inventor： Chae Gee Sung

IPC: H01L029/76 ,  H01L031/036 ,  H01L031/112

CPC classification number: H01L29/4908

Abstract: The invention intends to provide a TFT having a gate insulating film which has a high dielectric withstand voltage and can ensure a desired carrier mobility in an adjacent semiconductor active film. A gate electrode and a semiconductor active film are formed on a transparent substrate with a gate insulating film, which is formed of two layered insulating films, held between them. The gate insulating film is made up of a first gate insulating film which improves a withstand voltage between the gate electrode and the semiconductor active film, and a second gate insulating film which improves an interface characteristic between the gate insulating film and the semiconductor active film. The first and second gate insulating films are each formed of a SiNx film. The optical band gap of the first gate insulating film has a value in the range of 3.0 to 4.5 eV, and the optical band gap of the second gate insulating film has a value in the range of 5.0 to 5.3 eV.

Abstract translation: 本发明意图提供一种具有栅极绝缘膜的TFT，该栅极绝缘膜具有高的介电耐受电压并且可以确保相邻的半导体有源膜中所需的载流子迁移率。 在具有栅极绝缘膜的透明基板上形成栅电极和半导体有源膜，该绝缘膜由保持在它们之间的两层绝缘膜形成。 栅极绝缘膜由提高栅电极和半导体有源膜之间的耐受电压的第一栅极绝缘膜和改善栅极绝缘膜和半导体活性膜之间的界面特性的第二栅极绝缘膜构成。 第一和第二栅极绝缘膜各自由SiNx膜形成。 第一栅极绝缘膜的光学带隙的值在3.0〜4.5eV的范围内，第二栅极绝缘膜的光学带隙的值在5.0〜5.3eV的范围内。