公开(公告)号：US20110266594A1

公开(公告)日：2011-11-03

申请号：US13097686

申请日：2011-04-29

Applicant: Marc Aid ,  Emmanuel Defay ,  Aude Lefevre ,  Guy-Michel Parat

Inventor： Marc Aid ,  Emmanuel Defay ,  Aude Lefevre ,  Guy-Michel Parat

IPC: H01L29/12 ,  H01L21/20

CPC classification number: H01L21/31122 ,  H01L21/31105 ,  H01L41/316 ,  H01L41/332

Abstract: A method is disclosed, for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, comprising: the formation of an AlN growth layer on a substrate, the deposition of the AlN layer, on at least said growth layer, the formation of a mask layer over the AlN layer, at least one edge of which is aligned with at least one edge or side of the growth layer, in a plane which is substantially perpendicular to a surface of the substrate or a surface of the growth layer, the etching of the AlN layer.

Abstract translation: 公开了一种用于生产具有相对于衬底表面具有大致垂直侧面的AlN层的方法，包括：在衬底上形成AlN生长层，在至少所述生长层上沉积AlN层， 在AlN层上形成掩模层，该掩模层的至少一个边缘与生长层的至少一个边缘或一侧对准，该平面基本上垂直于基底的表面或生长的表面 层，蚀刻AlN层。

公开(公告)号：US08460987B2

公开(公告)日：2013-06-11

申请号：US13097686

申请日：2011-04-29

Applicant: Marc Aid ,  Emmanuel Defay ,  Aude Lefevre ,  Guy-Michel Parat

Inventor： Marc Aid ,  Emmanuel Defay ,  Aude Lefevre ,  Guy-Michel Parat

IPC: H01L21/20

CPC classification number: H01L21/31122 ,  H01L21/31105 ,  H01L41/316 ,  H01L41/332

Abstract: A method for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, including: the formation of an AlN growth layer on a substrate, the deposition of the AlN layer, on at least said growth layer, the formation of a mask layer over the AlN layer, at least one edge of which is aligned with at least one edge or side of the growth layer, in a plane which is substantially perpendicular to a surface of the substrate or a surface of the growth layer, and the etching of the AlN layer.

Abstract translation: 一种制造具有相对于衬底表面具有大致垂直侧面的AlN层的方法，包括：在衬底上形成AlN生长层，在至少所述生长层上沉积AlN层，形成 在AlN层上的掩模层，其至少一个边缘与生长层的至少一个边缘或一侧对准，该平面基本垂直于基底的表面或生长层的表面，以及 蚀刻AlN层。

公开(公告)号：US08667845B2

公开(公告)日：2014-03-11

申请号：US12937856

申请日：2009-04-14

Applicant: Emmanuel Defay ,  Marc Aid ,  Pierre-Patrick Lassagne ,  Nicolas Sarrut-Rio

Inventor： Emmanuel Defay ,  Marc Aid ,  Pierre-Patrick Lassagne ,  Nicolas Sarrut-Rio

IPC: G01N29/036

CPC classification number: G01N29/022 ,  G01N2291/014 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0427

Abstract: A device for detecting elements in a fluid environment includes at least one acoustic resonator having a surface designed for fixing of elements. The resonator is configured for generating and measuring Lamb waves fostering generation of symmetrical Lamb waves. The device analyzes the resonance frequency of the resonator to determine the variation of the resonance frequency of the symmetrical Lamb waves representative of the presence of the elements.

Abstract translation: 用于检测流体环境中的元件的装置包括至少一个具有设计用于固定元件的表面的声谐振器。 谐振器被配置用于产生和测量促进产生对称兰姆波的兰姆波。 器件分析谐振器的谐振频率，以确定代表元件存在的对称兰姆波的谐振频率的变化。

公开(公告)号：US20110072901A1

公开(公告)日：2011-03-31

申请号：US12937856

申请日：2009-04-14

Applicant: Emmanuel Defay ,  Marc Aid ,  Pierre-Patrick Lassagne ,  Nicolas Sarrut-Rio

Inventor： Emmanuel Defay ,  Marc Aid ,  Pierre-Patrick Lassagne ,  Nicolas Sarrut-Rio

IPC: G01N29/036

CPC classification number: G01N29/022 ,  G01N2291/014 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0427

Abstract: The device for detecting elements in a fluidic medium comprises at least one acoustic resonator having a surface intended for fixing the elements. The resonator includes means for generating and measuring Lamb waves, favouring the generation of symmetrical Lamb waves. The device analyses the resonant frequency of the resonator in order to determine the variation in the resonant frequency of the symmetrical Lamb waves representative of the presence of the elements.

Abstract translation: 用于检测流体介质中的元件的装置包括至少一个具有用于固定元件的表面的声谐振器。 谐振器包括用于产生和测量兰姆波的装置，有利于产生对称的兰姆波。 器件分析谐振器的谐振频率，以便确定代表元件存在的对称兰姆波的谐振频率的变化。

公开(公告)号：US06388846B1

公开(公告)日：2002-05-14

申请号：US09402248

申请日：2000-03-14

Applicant: Jean-Baptise Albertini ,  Marc Aid

Inventor： Jean-Baptise Albertini ,  Marc Aid

IPC: G11B5127

CPC classification number: G11B5/3912 ,  G01R33/09

Abstract: According to the invention, the magnetoresistance (25) is coupled to a secondary air gap (15) formed by two hollowed out magnetic parts (12-1, 12-2). Applicable to the measurement of magnetic fields.

Abstract translation: 根据本发明，磁阻（25）耦合到由两个中空的磁性部件（12-1,12-2）形成的二次气隙（​​15）。 适用于测量磁场。