公开(公告)号：US20060276008A1

公开(公告)日：2006-12-07

申请号：US11143191

申请日：2005-06-02

Applicant: Vesa-Pekka Lempinen ,  Jari Makinen ,  Markku Tilli

Inventor： Vesa-Pekka Lempinen ,  Jari Makinen ,  Markku Tilli

IPC: H01L29/84 ,  H01L21/30

CPC classification number: B81C1/00626 ,  B81B2203/0127 ,  B81C2201/0104 ,  Y10T428/24479

Abstract: A method for thinning a wafer layer to a predetermined thickness comprises two phases of thinning. A first thinning phase and a second thinning phase, wherein the first thinning phase is a preparatory thinning phase and the second thinning phase is a final thinning phase, so performed that the structure comprising silicon meets as thinned the final thickness as predetermined. Such thinned layer in a wafer for instance, can be used in a sensor to be used in normal sized, micromechanical or even nano-sized devices for the device specific sensing applications in electromechanical devices.

Abstract translation: 将晶片薄层化为预定厚度的方法包括两个稀化阶段。 第一稀化相和第二稀化相，其中所述第一稀化相是预备性稀化相，并且所述第二稀化相是最后的稀化相，因此进行所述包含硅的结构使预定的最终厚度变薄。 例如，晶片中的这种薄化层可以用于传感器中，以用于在机电装置中用于器件特定感测应用的正常尺寸，微机械或甚至纳米尺寸的装置中。

公开(公告)号：US20110250733A1

公开(公告)日：2011-10-13

申请号：US13168375

申请日：2011-06-24

Applicant: Vesa-Pekka Lempinen ,  Jari Mäkinen ,  Markku Tilli

Inventor： Vesa-Pekka Lempinen ,  Jari Mäkinen ,  Markku Tilli

IPC: H01L21/304 ,  B32B3/00 ,  H01L21/306

CPC classification number: B81C1/00626 ,  B81B2203/0127 ,  B81C2201/0104 ,  Y10T428/24479

Abstract: A method for thinning a wafer layer to a predetermined thickness comprises two phases of thinning. A first thinning phase and a second thinning phase, wherein the first thinning phase is a preparatory thinning phase and the second thinning phase is a final thinning phase, so performed that the structure comprising silicon meets as thinned the final thickness as predetermined. Such thinned layer in a wafer for instance, can be used in a sensor to be used in normal sized, micromechanical or even nano-sized devices for the device specific sensing applications in electromechanical devices.

Abstract translation: 将晶片薄层化为预定厚度的方法包括两个稀化阶段。 第一稀化相和第二稀化相，其中所述第一稀化相是预备性稀化相，并且所述第二稀化相是最终稀化相，因此执行包括硅的结构使预定的最终厚度变薄。 例如，晶片中的这种薄化层可以用于传感器中，以用于在机电装置中用于器件特定感测应用的正常尺寸，微机械或甚至纳米尺寸的装置中。