公开(公告)号：US06936821B2

公开(公告)日：2005-08-30

申请号：US10307085

申请日：2002-11-29

Applicant: Steven L. Williamson ,  James V. Rudd ,  David Zimdars ,  Matthew Warmuth ,  Artur Chernovsky

Inventor： Steven L. Williamson ,  James V. Rudd ,  David Zimdars ,  Matthew Warmuth ,  Artur Chernovsky

IPC: G01J5/20 ,  H01L31/062 ,  H01L31/112 ,  H01L31/113 ,  H01Q23/00

CPC classification number: H01S1/02 ,  H01L31/09 ,  H01Q23/00 ,  H03F3/087 ,  H03F3/45475 ,  H03F17/00 ,  H03F2203/45138

Abstract: The present invention includes a semiconductor epitaxial structure optimized for photoconductive free space terahertz generation and detection; and amplifier circuits for photoconductively sampled terahertz detection which may employ the optimized epitaxial structures.

Abstract translation: 本发明包括为光电自由空间太赫兹生成和检测而优化的半导体外延结构; 以及用于光电采样太赫兹检测的放大器电路，其可以采用优化的外延结构。