公开(公告)号：US08519444B2

公开(公告)日：2013-08-27

申请号：US12879447

申请日：2010-09-10

Applicant: Annie Lum ,  Derek C. Tao ,  Cheng Hung Lee ,  Chung-Ji Lu ,  Hong-Chen Cheng ,  Vineet Kumar Agrawal ,  Keun-Young Kim ,  Pyong Yun Cho

Inventor： Annie Lum ,  Derek C. Tao ,  Cheng Hung Lee ,  Chung-Ji Lu ,  Hong-Chen Cheng ,  Vineet Kumar Agrawal ,  Keun-Young Kim ,  Pyong Yun Cho

IPC: H01L27/118

CPC classification number: G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  H01L27/0207 ,  H01L27/088 ,  Y02P90/265

Abstract: The layouts, device structures, and methods described above utilize dummy devices to extend the diffusion regions of edge structures and/or non-allowed structures to the dummy device. Such extension of diffusion regions resolves or reduces LOD and edge effect issues. In addition, treating the gate structure of a dummy device next to an edge device also allows only one dummy structure to be added next to the dummy device and saves the real estate on the semiconductor chip. The dummy devices are deactivated and their performance is not important. Therefore, utilizing dummy devices to extend the diffusion regions of edge structures and/or non-allowed structures according to design rules allows the resolution or reduction or LOD and edge effect issues without the penalty of yield reduction or increase in layout areas.

Abstract translation: 上述布局，装置结构和方法利用虚设装置将边缘结构和/或非允许结构的扩散区域扩展到虚设装置。 这种扩散区域的扩展可解决或减少LOD和边缘效应问题。 此外，在边缘装置旁边处理伪装置的栅极结构也仅允许在虚设装置旁边添加一个虚拟结构，并将该不动产保存在半导体芯片上。 虚拟设备被禁用，其性能不重要。 因此，利用虚设装置根据设计规则扩展边缘结构和/或非允许结构的扩散区域允许分辨率或降低或LOD和边缘效应发生，而不会降低成品率或增加布局面积。

公开(公告)号：US20120061764A1

公开(公告)日：2012-03-15

申请号：US12879447

申请日：2010-09-10

Applicant: Annie LUM ,  Derek C. TAO ,  Cheng Hung LEE ,  Chung-Ji LU ,  Hong-Chen CHENG ,  Vineet Kumar AGRAWAL ,  Keun-Young KIM ,  Pyong Yun CHO

Inventor： Annie LUM ,  Derek C. TAO ,  Cheng Hung LEE ,  Chung-Ji LU ,  Hong-Chen CHENG ,  Vineet Kumar AGRAWAL ,  Keun-Young KIM ,  Pyong Yun CHO

IPC: H01L27/088 ,  G06F17/50

CPC classification number: G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  H01L27/0207 ,  H01L27/088 ,  Y02P90/265

Abstract: The layouts, device structures, and methods described above utilize dummy devices to extend the diffusion regions of edge structures and/or non-allowed structures to the dummy device. Such extension of diffusion regions resolves or reduces LOD and edge effect issues. In addition, treating the gate structure of a dummy device next to an edge device also allows only one dummy structure to be added next to the dummy device and saves the real estate on the semiconductor chip. The dummy devices are deactivated and their performance is not important. Therefore, utilizing dummy devices to extend the diffusion regions of edge structures and/or non-allowed structures according to design rules allows the resolution or reduction or LOD and edge effect issues without the penalty of yield reduction or increase in layout areas.

Abstract translation: 上述布局，装置结构和方法利用虚设装置将边缘结构和/或非允许结构的扩散区域扩展到虚设装置。 这种扩散区域的扩展可解决或减少LOD和边缘效应问题。 此外，在边缘装置旁边处理伪装置的栅极结构也仅允许在虚设装置旁边添加一个虚拟结构，并将该不动产保存在半导体芯片上。 虚拟设备被禁用，其性能不重要。 因此，利用虚设装置根据设计规则扩展边缘结构和/或非允许结构的扩散区域允许分辨率或降低或LOD和边缘效应发生，而不会降低成品率或增加布局面积。