High voltage high power multi-level drive structure
    3.
    发明授权
    High voltage high power multi-level drive structure 有权
    高压大功率多级驱动结构

    公开(公告)号:US09148069B2

    公开(公告)日:2015-09-29

    申请号:US13480919

    申请日:2012-05-25

    CPC classification number: H02M7/483 H02M7/487 H02M2001/007

    Abstract: A high voltage, high power multi-level drive structure includes a plurality of neutral-point-piloted (NPP) converter cells stacked together. At least one clamping diode is connected to one or many NPP converter cells to provide a neutral-point-pilot-clamped (NPPC) converter structure. Flying capacitors connected to the NPPC converter structure yield a neutral-point-clamped-flying-capacitor converter cell structure.

    Abstract translation: 高电压,高功率多电平驱动结构包括多个堆叠在一起的中性点导频(NPP)转换器单元。 至少一个钳位二极管连接到一个或多个NPP转换器单元,以提供中性点导频钳位(NPPC)转换器结构。 连接到NPPC转换器结构的飞溅电容器产生中性点钳位的跨电容转换器单元结构。

    HIGH VOLTAGE HIGH POWER MULTI-LEVEL DRIVE STRUCTURE
    4.
    发明申请
    HIGH VOLTAGE HIGH POWER MULTI-LEVEL DRIVE STRUCTURE 有权
    高电压多电平驱动结构

    公开(公告)号:US20130314957A1

    公开(公告)日:2013-11-28

    申请号:US13480919

    申请日:2012-05-25

    CPC classification number: H02M7/483 H02M7/487 H02M2001/007

    Abstract: A high voltage, high power multi-level drive structure includes a plurality of neutral-point-piloted (NPP) converter cells stacked together. At least one clamping diode is connected to one or many NPP converter cell to provide a neutral-point-pilot-clamped (NPPC) converter structure. Flying capacitors connected to the NPPC converter structure yield a neutral-point-clamped-flying-capacitor converter cell structure.

    Abstract translation: 高电压,高功率多电平驱动结构包括多个堆叠在一起的中性点导频(NPP)转换器单元。 至少一个钳位二极管连接到一个或多个NPP转换器单元,以提供中性点导频钳位(NPPC)转换器结构。 连接到NPPC转换器结构的飞溅电容器产生中性点钳位的跨电容转换器单元结构。

    Soft switching power electronic transformer
    5.
    发明授权
    Soft switching power electronic transformer 有权
    软开关电源电子变压器

    公开(公告)号:US08446743B2

    公开(公告)日:2013-05-21

    申请号:US12834437

    申请日:2010-07-12

    CPC classification number: H02M7/217 H02M5/297

    Abstract: This patent document discloses power electronic transformers having a high-frequency link. An example apparatus include a transformer having a primary winding and a secondary winding, the transformer is configured to receive a primary power signal having a first frequency, a primary converter configured to selectively oscillate polarity of the primary windings with respect to the secondary windings at a second frequency, the second frequency substantially substantially higher than the first frequency, a secondary converter coupled to the secondary winding, the secondary converter configured to provide a load power signal using a high frequency power signal generated using the secondary winding. The secondary converter can be configured to reduce current flow in the primary winding when the polarity of the primary winding is switched, the reduced current follow is configured to reduce disturbances resulting from leakage inductance of the transformer.

    Abstract translation: 该专利文献公开了具有高频链路的电力电子变压器。 示例性装置包括具有初级绕组和次级绕组的变压器,变压器被配置为接收具有第一频率的主要功率信号,初级转换器被配置为在一个第一绕组和第二绕组上选择性地振荡初级绕组相对于次级绕组的极性 第二频率,第二频率明显高于第一频率,次级转换器耦合到次级绕组,次级转换器被配置为使用使用次级绕组产生的高频功率信号来提供负载功率信号。 次级转换器可以被配置为当初级绕组的极性被切换时减小初级绕组中的电流,减小的电流跟随被配置为减少由变压器的漏电感引起的干扰。

    Method and system for storing excess data in a redundant array of independent disk level 6
    6.
    发明授权
    Method and system for storing excess data in a redundant array of independent disk level 6 有权
    用于将多余数据存储在独立磁盘级别6的冗余阵列中的方法和系统

    公开(公告)号:US08145840B2

    公开(公告)日:2012-03-27

    申请号:US12478771

    申请日:2009-06-05

    CPC classification number: G06F11/1076 G06F2211/1004 G06F2211/1057

    Abstract: A method and system for storing excess data in a redundant array of independent disks (RAID) level 6 are disclosed. In one embodiment, a method for storing excess data in a RAID 6 volume includes writing excess data to Q parity blocks of a first RAID 6 volume when a receipt of the excess data directed to the first RAID 6 volume is detected subsequent to a saturation of the first RAID 6 volume, where the first RAID 6 volume is converted to a pseudo-RAID 5 volume with P parity blocks. The method further includes re-computing the P parity blocks of the pseudo-RAID 5 volume based on data blocks of the pseudo-RAID 5 volume. In addition, the method includes constructing a second RAID 6 volume based on the pseudo-RAID 5 volume when at least one additional drive is inserted to the pseudo-RAID 5 volume.

    Abstract translation: 公开了一种用于将多余数据存储在独立磁盘(RAID)级别6的冗余阵列中的方法和系统。 在一个实施例中,用于将超量数据存储在RAID 6卷中的方法包括:在多个数据的饱和之后检测到指向第一RAID 6卷的多余数据的接收时,将多余的数据写入第一RAID 6卷的Q个奇偶校验块 第一个RAID 6卷,其中第一个RAID 6卷被转换为具有P个奇偶校验块的伪RAID 5卷。 该方法还包括基于伪RAID 5卷的数据块重新计算伪RAID 5卷的P个奇偶校验块。 此外,该方法包括当至少一个附加驱动器插入到伪RAID 5卷时,基于伪RAID 5卷构建第二RAID 6卷。

    Solid oxide fuel cell (SOFC) anode materials
    8.
    发明授权
    Solid oxide fuel cell (SOFC) anode materials 有权
    固体氧化物燃料电池(SOFC)阳极材料

    公开(公告)号:US07842200B2

    公开(公告)日:2010-11-30

    申请号:US11755014

    申请日:2007-05-30

    Abstract: The invention relates to compositions and composite particles that may be employed as anode materials for Solid Oxide Fuel Cells (SOFCs). The invention particularly relates to novel metallic SOFC anode materials, which preferably comprise metallic nickel (Ni), copper (Cu), especially if the Ni/Cu oxide has been stabilized with yttrium (Y) oxide (e.g., Y2O3) and/or zirconium (Zr) oxide (e.g., ZrO2) composition(s) (“YSZ”). Such compositions may additionally comprise a cerium (Ce) oxide (such as CeO2) (e.g., Ni/YSZ/CeO2). The invention particularly concerns such compositions and particles produced through the use of direct deposition or Flame Spray Pyrolysis so as to provide a controlled morphology and chemical composition.

    Abstract translation: 本发明涉及可用作固体氧化物燃料电池(SOFC)的阳极材料的组合物和复合颗粒。 本发明特别涉及新型金属SOFC阳极材料,其优选包括金属镍(Ni),铜(Cu),特别是如果Ni / Cu氧化物已用氧化钇(Y)(例如Y 2 O 3)和/或锆 (Zr)氧化物(例如,ZrO 2)组合物(“YSZ”)。 这样的组合物可另外包含氧化铈(Ce)(例如CeO 2)(例如Ni / YSZ / CeO 2)。 本发明特别涉及通过使用直接沉积或火焰喷雾热解制备的这种组合物和颗粒,以提供受控的形态和化学组成。

    Memory Systems and Accessing Methods
    9.
    发明申请
    Memory Systems and Accessing Methods 审中-公开
    内存系统和访问方法

    公开(公告)号:US20100122039A1

    公开(公告)日:2010-05-13

    申请号:US12268732

    申请日:2008-11-11

    CPC classification number: G06F12/023 G06F7/785 G06F2212/1044

    Abstract: Memory systems and accessing methods are disclosed. In one embodiment, a method of accessing a memory device includes accessing a first end of the memory device regarding a first data type, and accessing a second end of the memory device regarding a second data type.

    Abstract translation: 公开了存储器系统和访问方法。 在一个实施例中,访问存储器设备的方法包括:访问存储器件的第一端,关于第一数据类型,以及访问第二数据类型的存储器件的第二端。

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