公开(公告)号：US20230236446A1

公开(公告)日：2023-07-27

申请号：US18295121

申请日：2023-04-03

Applicant: ST Microelectronics (Crolles 2) SAS

Inventor： Sébastien Cremer ,  Frédéric Boeuf ,  Stephane Monfray

IPC: G02F1/035 ,  G02B6/12 ,  G02F1/01

CPC classification number: G02F1/035 ,  G02B6/12004 ,  G02F1/0147 ,  G02F2201/063

Abstract: The present disclosure relates to a method including the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

公开(公告)号：US20170141541A1

公开(公告)日：2017-05-18

申请号：US15349515

申请日：2016-11-11

Applicant: Commissariat a l'energie atomique et aux energies alternatives ,  ST Microelectronics SA ,  ST Microelectronics (Crolles 2) SAS

Inventor： Thomas FERROTTI ,  Badhise BEN BAKIR ,  Alain CHANTRE ,  Sebastien CREMER ,  Helene DUPREZ

IPC: H01S5/20 ,  H01S5/323

CPC classification number: H01S5/2031 ,  H01S5/021 ,  H01S5/0654 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1206 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/2027 ,  H01S5/323

Abstract: A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.

公开(公告)号：US09899800B2

公开(公告)日：2018-02-20

申请号：US15349515

申请日：2016-11-11

Applicant: Commissariat a l'energie atomique et aux energies alternatives ,  ST Microelectronics SA ,  ST Microelectronics (Crolles 2) SAS

Inventor： Thomas Ferrotti ,  Badhise Ben Bakir ,  Alain Chantre ,  Sebastien Cremer ,  Helene Duprez

IPC: H01S5/20 ,  H01S5/323 ,  H01S5/02 ,  H01S5/10 ,  H01S5/12 ,  H01S5/125 ,  H01S5/065

CPC classification number: H01S5/2031 ,  H01S5/021 ,  H01S5/0654 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1206 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/2027 ,  H01S5/323

Abstract: A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.