公开(公告)号：US20220059765A1

公开(公告)日：2022-02-24

申请号：US16999441

申请日：2020-08-21

Applicant: Tokyo Electron Limited ,  SUNY Polytechnic Institute, College of Nanoscience and Engineering

Inventor： Sergey Voronin ,  Qi Wang ,  Shyam Sridhar ,  Karsten Beckmann ,  Martin Rodgers ,  Nathaniel Cady

IPC: H01L45/00

Abstract: The performance of a ReRAM structure may be stabilized by utilizing a dry chemical gas removal (or cleaning) process to remove sidewall residue and/or etch by-products after etching the ReRAM stack layers. The dry chemical gas removal process decreases undesirable changes in the ReRAM forming voltage that may result from such sidewall residue and/or etch by-products. Specifically, the dry chemical gas removal process may reduce the ReRAM forming voltage that may otherwise result in a ReRAM structure that has the sidewall residue and/or etch by-products. In one embodiment, the dry chemical gas removal process may comprise utilizing a combination of HF and NH3 gases. The dry chemical gas removal process utilizing HF and NH3 gases may be particularly suited for removing halogen containing sidewall residue and/or etch by-products.

公开(公告)号：US11637242B2

公开(公告)日：2023-04-25

申请号：US16999441

申请日：2020-08-21

Applicant: Tokyo Electron Limited ,  SUNY Polytechnic Institute, College of Nanoscience and Engineering

Inventor： Sergey Voronin ,  Qi Wang ,  Shyam Sridhar ,  Karsten Beckmann ,  Martin Rodgers ,  Nathaniel Cady

IPC: H01L45/00 ,  G11C11/15

Abstract: The performance of a ReRAM structure may be stabilized by utilizing a dry chemical gas removal (or cleaning) process to remove sidewall residue and/or etch by-products after etching the ReRAM stack layers. The dry chemical gas removal process decreases undesirable changes in the ReRAM forming voltage that may result from such sidewall residue and/or etch by-products. Specifically, the dry chemical gas removal process may reduce the ReRAM forming voltage that may otherwise result in a ReRAM structure that has the sidewall residue and/or etch by-products. In one embodiment, the dry chemical gas removal process may comprise utilizing a combination of HF and NH3 gases. The dry chemical gas removal process utilizing HF and NH3 gases may be particularly suited for removing halogen containing sidewall residue and/or etch by-products.