公开(公告)号：US08585872B2

公开(公告)日：2013-11-19

申请号：US12010585

申请日：2008-01-28

Applicant: Satoru Takasawa ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi

Inventor： Satoru Takasawa ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi

IPC: C23C14/35

CPC classification number: C23C14/352 ,  C23C14/086 ,  C23C14/568 ,  H01J37/3266 ,  H01J37/32752 ,  H01J37/34 ,  H01J37/3408 ,  H01J37/347

Abstract: A sputtering apparatus for ensuring high target utilization efficiency is provided. The sputtering apparatus 1 of the present invention comprises a moving means 28a, 28b so that first and second magnet members 23a, 23b can be moved by the moving means 28a, 28b in planes parallel to the surfaces of first and second targets 21a, 21b. When the first and second magnet members 23a, 23b move, magnetic field lines as well as deeply eroded regions on the surfaces of the first and second targets 21a, 21b also move, whereby large areas on the surfaces of the first and second targets 21a, 21b are sputtered.

Abstract translation: 提供了一种用于确保高目标利用效率的溅射装置。 本发明的溅射装置1包括移动装置28a，28b，使得第一和第二磁体构件23a，23b可以通过移动装置28a，28b在平行于第一和第二目标21a，21b的表面的平面中移动。 当第一和第二磁体构件23a，23b移动时，第一和第二目标21a，21b的表面上的磁场线以及深蚀的区域也移动，从而第一和第二目标21a， 21b被溅射。

公开(公告)号：US20120206685A1

公开(公告)日：2012-08-16

申请号：US13402120

申请日：2012-02-22

Applicant: Satoru TAKASAWA ,  Masanori SHIRAI ,  Satoru ISHIBASHI

Inventor： Satoru TAKASAWA ,  Masanori SHIRAI ,  Satoru ISHIBASHI

IPC: G02F1/1343 ,  H01L21/441 ,  H01L29/786

CPC classification number: H01L23/53238 ,  G02F1/1368 ,  G02F2201/501 ,  G02F2202/28 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electrode film which does not exfoliate from, or diffuse into, an oxide semiconductor or an oxide thin film. An electrode layer comprises a highly adhesive barrier film being a Cu—Mg—Al thin film and a copper thin film; and an oxide semiconductor and an oxide thin film contact with the highly adhesive barrier film. With the highly adhesive barrier film having magnesium in a range of at least 0.5 at % but at most 5 at % and aluminum at least 5 at % but at most 15 at % when the total number of atoms of copper, magnesium, and aluminum is 100 at %, the highly adhesive barrier film has both adhesion and barrier properties. The electrode layer is suitable because a source electrode layer and a drain electrode layer contact the oxide semiconductor layer. A stopper layer having an oxide may be provided on a layer under the electrode layer.

Abstract translation: 公开了不会从氧化物半导体或氧化物薄膜剥离或扩散到其中的电极膜。 电极层包括Cu-Mg-Al薄膜和铜薄膜的高粘合阻挡膜; 并且氧化物半导体和氧化物薄膜与高度粘合的阻挡膜接触。 当具有至少0.5原子％但至多5原子％的镁的高度粘合的阻挡膜和当铜，镁和铝的原子总数为至少5原子％，但至多为15原子％时， 100原子％时，高粘合阻障膜具有粘合性和阻隔性。 电极层是合适的，因为源电极层和漏电极层接触氧化物半导体层。 可以在电极层下面的层上设置具有氧化物的阻挡层。

公开(公告)号：US20110298738A1

公开(公告)日：2011-12-08

申请号：US13137212

申请日：2011-07-28

Applicant: Hirohisa Takahashi ,  Satoru Ishibashi ,  Noriaki Tani ,  Sadayuki Ukishima ,  Satoru Takasawa ,  Kyuzo Nakamura ,  Haruhiko Yamamoto

Inventor： Hirohisa Takahashi ,  Satoru Ishibashi ,  Noriaki Tani ,  Sadayuki Ukishima ,  Satoru Takasawa ,  Kyuzo Nakamura ,  Haruhiko Yamamoto

IPC: G06F3/041

CPC classification number: G06F3/045

Abstract: A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken.

Abstract translation: 提供了具有高耐久性的触摸面板。 显示装置和柔性面板中的任一个或两者具有形成在电极层（上电极层，下电极层）的表面上的岛状保护体，并且在保护体之间露出透明导电膜。 由于保护体从透明导电膜的表面突出高度突出，当按压柔性面板并使上部电极和下部电极层接触时，通过保护性 使透明导电膜不破裂。

公开(公告)号：US20110068338A1

公开(公告)日：2011-03-24

申请号：US12881652

申请日：2010-09-14

Applicant: Satoru TAKASAWA ,  Satoru Ishibashi ,  Tadashi Masuda

Inventor： Satoru TAKASAWA ,  Satoru Ishibashi ,  Tadashi Masuda

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L23/53238 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.

Abstract translation: 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜由其中添加有Al的粘合层和设置在粘合层上并由纯铜制成的金属低电阻层构成。 当包含Al和氧的铜合金包括在粘合层中并且由其形成源电极和漏电极时，即使当暴露于氢等离子体时，铜也不会在粘附层和硅层之间的界面处析出 ，其防止粘附层和硅层之间的剥离的发生。 如果Al的量增加，由于粘合层和金属低电阻层的宽度在蚀刻之后大大不同，所以允许进行蚀刻的最大添加量是上限。

公开(公告)号：US20100295811A1

公开(公告)日：2010-11-25

申请号：US12814039

申请日：2010-06-11

Applicant: Hirohisa TAKAHASHI ,  Satoru Ishibashi ,  Noriaki Tani ,  Sadayuki Ukishima ,  Satoru Takasawa ,  Kyuzo Nakamura ,  Haruhiko Yamamoto

Inventor： Hirohisa TAKAHASHI ,  Satoru Ishibashi ,  Noriaki Tani ,  Sadayuki Ukishima ,  Satoru Takasawa ,  Kyuzo Nakamura ,  Haruhiko Yamamoto

IPC: G06F3/041

CPC classification number: G06F3/045

Abstract: A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken.

Abstract translation: 提供了具有高耐久性的触摸面板。 显示装置和柔性面板中的任一个或两者具有形成在电极层（上电极层，下电极层）的表面上的岛状保护体，并且在保护体之间露出透明导电膜。 由于保护体从透明导电膜的表面突出高度突出，当按压柔性面板并使上部电极和下部电极层接触时，通过保护性 使透明导电膜不破裂。

公开(公告)号：US20090236603A1

公开(公告)日：2009-09-24

申请号：US12480150

申请日：2009-06-08

Applicant: Satoru Takasawa ,  Masaki Takei ,  Hirohisa Takahashi ,  Hiroaki Katagiri ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi ,  Tadashi Masuda

Inventor： Satoru Takasawa ,  Masaki Takei ,  Hirohisa Takahashi ,  Hiroaki Katagiri ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi ,  Tadashi Masuda

IPC: H01L27/06 ,  H01L21/768 ,  H01L29/786 ,  H01L29/772 ,  H01L33/00 ,  C23C14/00

CPC classification number: H01L23/53238 ,  H01L21/2855 ,  H01L27/124 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/16 ,  H05K3/388 ,  H01L2924/00

Abstract: A wiring film having excellent adhesion and a low resistance is formed. A barrier film having copper as a main component and containing oxygen is formed on an object to form a film thereon by introducing an oxygen gas into a vacuum chamber in which the object to form a film thereon and sputtering a pure copper target. Then, after the introduction of the oxygen gas is stopped, a low-resistance film made of pure copper is formed by sputtering the pure copper target. Since the barrier film and the low-resistance film have copper as the main component, they can be patterned at a time. Since the low-resistance film has a resistance lower than that of the barrier film, the resistance of the entire wiring film is reduced. Since the barrier layer has high adhesion to glass and silicon, the entire wiring film has high adhesion.

Abstract translation: 形成具有优异的粘附性和低电阻的布线膜。 在物体上形成具有铜作为主要成分并含有氧的阻挡膜，以通过将氧气引入到其中形成膜的物体的真空室中并溅射纯铜靶来形成膜。 然后，在停止引入氧气之后，通过溅射纯铜靶而形成由纯铜制成的低电阻膜。 由于阻挡膜和低电阻膜具有铜作为主要成分，因此可以一次形成图案。 由于低电阻膜的阻抗低于阻挡膜的电阻，因此整个布线膜的电阻降低。 由于阻挡层对玻璃和硅具有高粘附性，因此整个布线膜具有高粘附性。

公开(公告)号：US20090184322A1

公开(公告)日：2009-07-23

申请号：US12391607

申请日：2009-02-24

Applicant: Satoru TAKASAWA ,  Masaki Takei ,  Hirohisa Takahashi ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi

Inventor： Satoru TAKASAWA ,  Masaki Takei ,  Hirohisa Takahashi ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi

IPC: H01L29/786 ,  C23C14/34 ,  H01L29/78

CPC classification number: H01L29/4908 ,  C23C14/0036 ,  C23C14/185 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/76843 ,  H01L23/53238 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: An electroconductive film having high adhesion and a low resistivity is formed. An electroconductive film composed mainly of copper and containing an addition metal such as Ti is formed by sputtering a target composed mainly of copper in a vacuum atmosphere into which a nitriding gas is introduced. Such an electroconductive film has high adhesion to a silicon layer and a substrate, and is hardly peeled from the substrate. Further, since the electroconductive film has a low resistivity and a low contact resistance to a transparent electroconductive film, the electric characteristics do not degrade even when it is used as an electrode film. The electroconductive film formed by the present invention is suitable particularly as a barrier film for an electrode of a TFT or a semiconductor element.

Abstract translation: 形成具有高粘附性和低电阻率的导电膜。 主要由铜构成并含有添加金属如Ti的导电膜通过溅射在其中引入氮化气体的真空气氛中主要由铜组成的靶而形成。 这样的导电膜对硅层和基板具有高粘合性，并且几乎不从基板上剥离。 此外，由于导电膜对透明导电膜具有低电阻率和低接触电阻，所以即使将其用作电极膜也不会降低电特性。 由本发明形成的导电膜特别适用于TFT或半导体元件的电极的阻挡膜。

公开(公告)号：US20120194757A1

公开(公告)日：2012-08-02

申请号：US13403145

申请日：2012-02-23

Applicant: Satoru TAKASAWA ,  Masanori SHIRAI ,  Satoru ISHIBASHI

Inventor： Satoru TAKASAWA ,  Masanori SHIRAI ,  Satoru ISHIBASHI

IPC: G02F1/136 ,  H05K1/03 ,  G02F1/1345 ,  H01L29/786

CPC classification number: H01L27/124 ,  C22C9/00 ,  C22C9/01 ,  H01L21/32051 ,  H01L23/53238 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is an electrode layer and a wiring layer, which are free from peeling from a glass substrate. A wiring layer and a gate electrode layer are constituted by an adhering film which is a thin film made of Cu—Mg—Al formed on a surface of a glass substrate, and a copper film formed on the adhering film. When the adhering film includes Mg in a range of at least 0.5 atom % and at most 5 atom %, and aluminum in a range of at least 5 atom % and at most 15 atom %, assuming that the total number of atoms of copper, magnesium and aluminum is taken as 100 atom % , adhesion of the adhering film to the glass substrate becomes high, and the copper thin film is not peeled from the glass substrate. The wiring layer is electrically connected to a pixel electrode of a liquid crystal display device.

Abstract translation: 设置有不从玻璃基板剥离的电极层和布线层。 布线层和栅极电极层由在玻璃基板的表面上形成的由Cu-Mg-Al构成的薄膜和形成在粘合膜上的铜膜的粘合膜构成。 当粘合膜包含至少0.5原子％至多5原子％范围内的Mg，至少5原子％至多15原子％的铝时，假设铜的原子总数， 镁和铝为100原子％，粘合膜对玻璃基板的粘附性变高，铜薄膜不会从玻璃基板剥离。 布线层与液晶显示装置的像素电极电连接。

公开(公告)号：US08218122B2

公开(公告)日：2012-07-10

申请号：US12475907

申请日：2009-06-01

Applicant: Satoru Takasawa ,  Masaki Takei ,  Hirohisa Takahashi ,  Hiroaki Katagiri ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi ,  Tadashi Masuda

Inventor： Satoru Takasawa ,  Masaki Takei ,  Hirohisa Takahashi ,  Hiroaki Katagiri ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi ,  Tadashi Masuda

IPC: G02F1/13

CPC classification number: H01L23/53238 ,  H01L21/2855 ,  H01L23/53233 ,  H01L27/124 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/16 ,  H05K3/388 ,  H01L2924/00

Abstract: A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.

Abstract translation: 形成具有优异的粘附性和阻隔性和低电阻值的布线膜。 将氧气引入其中设置有被成膜物体的真空室中; 溅射靶在含有氧的真空环境中溅射; 并且在待成膜物体的表面上形成第一金属膜。 第一溅射靶包括铜作为主要成分，以及选自由Mg，Al，Si，Be，Ca，Sr，Ba，Ra，Sc，Y，La，Ce组成的添加元素组中的至少一种添加元素， Pr，Nd，Pm，Sm，Eu，Gd，Tb和Dy。 此后，在将氧气引入真空环境的状态下，通过溅射溅射靶溅射溅射靶，在第一金属膜的表面上形成第二金属膜，然后通过蚀刻第一金属膜形成布线膜 和第二金属膜。

公开(公告)号：US20110233550A1

公开(公告)日：2011-09-29

申请号：US13064858

申请日：2011-04-21

Applicant: Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

Inventor： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66765 ,  C23C14/0036 ,  C23C14/185 ,  C23C14/5826 ,  H01L21/2855 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer.

Abstract translation: 提供即使暴露于氢等离子体也不会剥离的金属配线膜。 金属布线膜由包含铜，Ca和氧的粘合层和具有比粘合层低的电阻的低电阻金属层（铜合金或纯铜的一层）构成。 当粘合层由含有Ca和氧的铜合金构成，并且附着在欧姆接触层上的源电极膜和漏电极膜由粘合层构成时，即使粘附层暴露于氢 等离子体，在粘合层和欧姆接触层之间的界面处形成的含Cu氧化物不会降低，使得粘附层和硅层之间不会发生剥离。