公开(公告)号：US06171693B2

公开(公告)日：2001-01-09

申请号：US09179095

申请日：1998-10-27

Applicant: Peter Lubitz ,  Konrad Bussmann ,  Shu-Fan Cheng

Inventor： Peter Lubitz ,  Konrad Bussmann ,  Shu-Fan Cheng

IPC: G11B566

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996 ,  H01F10/324 ,  Y10S428/90 ,  Y10T428/1129 ,  Y10T428/26 ,  Y10T428/265

Abstract: A GMR stack has at least two ferromagnetic layers (e.g.,CoFe) spaced from each other by a nonferromagnetic layer (e.g., Cu). A layer of a phase-breaking material (such as Ta or a Ta-base alloy) between the nonferromagnetic layer and at least one of the two ferromagnetic layers prevents the undesirable growth of large-grained structures in the ferromagnetic layers.

Abstract translation: GMR堆叠具有由非铁磁层（例如Cu）彼此间隔开的至少两个铁磁层（例如CoFe）。 在非铁磁层和两个铁磁层中的至少一个之间的相断层材料（例如Ta或Ta基合金）层防止了铁磁层中大颗粒结构的不期望的生长。

公开(公告)号：US6066028A

公开(公告)日：2000-05-23

申请号：US210710

申请日：1998-12-14

Applicant: Shu-Fan Cheng ,  Darrell King

Inventor： Shu-Fan Cheng ,  Darrell King

IPC: B24B37/04 ,  C23F3/00 ,  H01L21/321 ,  B24B1/00

CPC classification number: B24B37/042 ,  C09G1/02 ,  C23F3/00 ,  H01L21/3212

Abstract: A composition for chemical mechanical polishing of copper that includes 05% by volume of an etchant such as nitric acid, ammonium hydroxide, hydrogen peroxide, acetic acid, or ammonium chloride; 0.1-1% by weight of an azole selected from benzotriazole and derivations thereof that function similarly to bezotriazole in the composition; 0.1-2% by volume of a biodegradable detergent; and deionized water or a lower alkanol to make 100% by volume of the composition. The polishing method includes the step of polishing the bottom copper surface of a magnetic electronic device with the polishing composition of this invention for 5-30 minutes to obtain rms roughness of the copper surface of less than about 6 .ANG..

Abstract translation: 一种用于铜的化学机械抛光的组合物，其包含0.5-5体积％的诸如硝酸，氢氧化铵，过氧化氢，乙酸或氯化铵的蚀刻剂; 0.1-1重量％的选自苯并三唑的唑类及其衍生物，其在组合物中的作用与异唑唑类似; 0.1-2体积％的可生物降解洗涤剂; 和去离子水或低级链烷醇制成100体积％的组合物。 抛光方法包括用本发明的抛光组合物研磨磁性电子器件的底部铜表面5-30分钟的步骤，以获得铜表面的均匀粗糙度小于约6安培。