公开(公告)号：US06547124B2

公开(公告)日：2003-04-15

申请号：US09881251

申请日：2001-06-14

Applicant: Tushar T. Shah ,  Andrew TS Pomerene ,  Keith K. Sturcken ,  Steven J. Wright

Inventor： Tushar T. Shah ,  Andrew TS Pomerene ,  Keith K. Sturcken ,  Steven J. Wright

IPC: B23K3512

CPC classification number: H01L24/12 ,  B23K35/0222 ,  B23K2101/40 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15787 ,  H05K3/3436 ,  H05K3/3473 ,  H05K2201/10992 ,  H05K2203/0415 ,  Y02P70/613 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A method of forming a plurality of micro column interconnection structures on a semiconductor includes providing a semiconductor layer. A photoresist layer is formed on the semiconductor layer. A plurality of cavities are etched in the photoresist layer. The plurality of cavities extend through the photoresist layer to the semiconductor layer. Solder is deposited in the plurality of cavities, thereby forming a plurality of micro columns of solder.

公开(公告)号：US20230212833A1

公开(公告)日：2023-07-06

申请号：US17568741

申请日：2022-01-05

Applicant: Steven J. Wright ,  Krista J. Wright

Inventor： Steven J. Wright ,  Krista J. Wright

IPC: E01H8/10 ,  B08B15/02

CPC classification number: E01H8/105 ,  B08B15/02

Abstract: Presented is a rail track cleaner vehicle configured for cleaning rail area. The rail track cleaner vehicle includes a wheel assembly, a main frame, a liquid sprayer assembly, an air blower assembly, a vacuum assembly and an electric motor assembly. The rail track cleaner vehicle comprises a plurality of optical camera to capture real time image of the rail area. The rail track cleaner vehicle efficiently and effectively clean the rail area and enables a remote personnel to inspect the cleaning process. The rail track cleaner vehicle substantially reduces manual labor and effort to clean the rail area.

公开(公告)号：US20230200841A1

公开(公告)日：2023-06-29

申请号：US17561810

申请日：2021-12-24

Applicant: Steven J. Wright ,  Krista J. Wright

Inventor： Steven J. Wright ,  Krista J. Wright

IPC: A61B17/3205 ,  A61F5/443 ,  A61F5/445 ,  B26F1/38 ,  B26F1/44

CPC classification number: A61B17/32053 ,  A61F5/443 ,  A61F5/445 ,  B26F1/44 ,  B26F1/3846 ,  B26F2001/4472

Abstract: Provided is an ostomy wafer cutter for enlarging a hole of an ostomy wafer. The ostomy wafer cutter includes an upper element having a locking means to removably lock a blade element. An upper arm is connected to the upper element. A lower element comprises a platform and a central pin for insertion in the hole of the ostomy wafer. A lower arm is connected to the lower element. A handle portion positioned on at least one of: upper arm and/or lower arm, the handle portion graspable and moveable by a user in a cutting position to bring the upper element in close contact with the lower element causing the cutting edge to cut the ostomy wafer enlarging the hole of the ostomy wafer. The proposed wafer cutter efficiently enlarges the opening of the ostomy wafer and is useful for patients having limited dexterity and/or for elderly people.

公开(公告)号：US5358879A

公开(公告)日：1994-10-25

申请号：US54994

申请日：1993-04-30

Applicant: Frederick T. Brady ,  Charles P. Breiten ,  Nadium F. Haddad ,  William G. Houston ,  Oliver S. Spencer ,  Steven J. Wright

Inventor： Frederick T. Brady ,  Charles P. Breiten ,  Nadium F. Haddad ,  William G. Houston ,  Oliver S. Spencer ,  Steven J. Wright

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L21/266

CPC classification number: H01L29/6659 ,  H01L21/28247 ,  H01L29/4983 ,  H01L29/6656 ,  H01L29/7836 ,  Y10S148/114

Abstract: A process to form poly sidegate LDD structures on buried channel MOSFETs is described. A polysilicon spacer is formed on the gate after source/drain processing. The spacer is later shorted to the main gate by implantation of neutral impurities. The process is particularly suited for SOI technology.

Abstract translation: 描述了在掩埋沟道MOSFET上形成多边栅极LDD结构的工艺。 在源/漏处理之后，在栅极上形成多晶硅间隔物。 间隔物随后通过植入中性杂质而短路到主栅极。 该工艺特别适用于SOI技术。

公开(公告)号：US09288976B1

公开(公告)日：2016-03-22

申请号：US13973500

申请日：2013-08-22

Applicant: Steven J. Wright

Inventor： Steven J. Wright

IPC: A63H33/40 ,  A01M31/00

CPC classification number: A01M31/004

Abstract: A housing forms an enclosed chamber. A container essentially fills the chamber is fabricated of a crinkle paper or like material adapted to produce a crackling and rustling sound when touched and manipulated by a user. A plurality of objects within the container are fabricated of a rigid material adapted to provide a three dimensional shape to the container and the housing for facilitating the movement of the crinkle paper or like material when manipulated by the user for creating a sound which will attract game during use.

Abstract translation: 外壳形成封闭的腔室。 基本上填充室的容器由皱纹纸或类似材料制成，适于在用户触摸和操纵时产生裂纹和沙沙声。 容器内的多个物体由适于向容器和壳体提供三维形状的刚性材料制成，用于当由用户操纵时促进皱纹纸或类似材料的移动，以产生将吸引游戏的声音 在使用过程中。