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    Apparatus for mounting stylus pen in an information device
    1.
    发明授权
    Apparatus for mounting stylus pen in an information device 有权
    用于将触针笔安装在信息装置中的装置

    公开(公告)号：US09152181B2

    公开(公告)日：2015-10-06

    申请号：US13561166

    申请日：2012-07-30

    Applicant: Sung-Young Lee ,  Ki-Deuk Kim ,  Jung-Woong Hyun

    Inventor： Sung-Young Lee ,  Ki-Deuk Kim ,  Jung-Woong Hyun

    IPC: G06F1/16 ,  H04M1/02

    CPC classification number: G06F1/1656 ,  G06F2200/1632 ,  H04M1/026

    Abstract: An apparatus for mounting in a secure manner a stylus pen in an information device, in which there are a casing and the stylus pen. A guide unit having an inlet and an outlet is configured to have an opened top at the inlet and a closed bottom at the outlet, extended along a length direction of the casing, for accommodating the stylus pen.

    Abstract translation: 一种用于将信号笔安全地安装在信息装置中的装置，其中存在壳体和触控笔。 具有入口和出口的引导单元被配置为在入口处具有敞开的顶部，并且在出口处具有沿壳体的长度方向延伸的封闭底部，用于容纳触针笔。

    APPARATUS AND METHOD FOR MATCHING LARGE-SCALE BIOMEDICAL ONTOLOGIES
    2.
    发明申请
    APPARATUS AND METHOD FOR MATCHING LARGE-SCALE BIOMEDICAL ONTOLOGIES 有权
    用于匹配大规模生物医学本体的装置和方法

    公开(公告)号：US20150149191A1

    公开(公告)日：2015-05-28

    申请号：US14091689

    申请日：2013-11-27

    Applicant: Sung-Young LEE ,  Muhammad Bilal Amin

    Inventor： Sung-Young LEE ,  Muhammad Bilal Amin

    IPC: G06Q10/06 ,  G06Q50/22

    CPC classification number: G06Q10/063 ,  G06F17/2785 ,  G06F19/00 ,  G06F19/10 ,  G06F19/28 ,  G06Q50/22 ,  G16H15/00 ,  G16H70/00

    Abstract: An ontology matching apparatus for large-scale biomedical ontologies according to the present invention is provided, and the ontology matching apparatus includes a preprocessing unit configured to classify received candidate ontologies into one or more ontology subsets to generate ontology subsets, a distribution processing unit configured to divide the generated ontology subsets by virtue of a distribution algorithm, apply a matching algorithm to the divided ontology subsets to generate matching threads, and deliver the generated matching threads to individual cores of participating nodes, and an aggregating unit configured to collect and sum matching results generated by the individual cores performing matching operations based on the matching threads to generate an ontology mapping.

    Abstract translation: 本发明提供了一种用于大规模生物医学本体的本体匹配装置，本体匹配装置包括：预处理单元，被配置为将接收到的候选本体分类成一个或多个本体子集以产生本体子集;分配处理单元， 通过分布算法对生成的本体子集进行划分，对分割的本体子集应用匹配算法以生成匹配线程，并将生成的匹配线程传递给参与节点的各个核心;以及聚合单元，用于收集和求和匹配结果 由各个核心基于匹配线程执行匹配操作生成本体映射。

    Image display apparatus and method of compensating for white balance
    4.
    发明授权
    Image display apparatus and method of compensating for white balance 有权
    图像显示装置和补偿白平衡的方法

    公开(公告)号：US08334930B2

    公开(公告)日：2012-12-18

    申请号：US12681169

    申请日：2008-10-02

    Applicant: Kang Soo Kim ,  Sung Young Lee

    Inventor： Kang Soo Kim ,  Sung Young Lee

    IPC: H04N9/73

    CPC classification number: H04N9/73 ,  G09G5/02 ,  G09G2320/0666 ,  G09G2360/144

    Abstract: An image display apparatus and a method of compensating for white balance are disclosed. The method of compensating for white balance of an image display apparatus includes reading a picture status mode (PSM) set in the image display apparatus, measuring the light amounts of RGB color signals from an external light source of the image display apparatus and detecting a color temperature of the external light source, calculating a difference between the detected color temperature of the external light source and a color temperature of the white balance of the set PSM, performing white balance gain compensation for correcting the color temperature of an input image according to the PSM using the calculated difference between the color temperatures, and displaying an image of which the white balance gain is compensated for. Accordingly, it is possible to correct a difference between color temperatures according to a PSM of an input image and an external light source in TV viewing conditions of various environments and maintain sharp white balance of an output image.

    Abstract translation: 公开了一种图像显示装置和补偿白平衡的方法。 补偿图像显示装置的白平衡的方法包括读取在图像显示装置中设置的图像状态模式（PSM），测量来自图像显示装置的外部光源的RGB颜色信号的光量并检测颜色 计算外部光源的检测色温与设定的PSM的白平衡的色温之差，进行白平衡增益补偿，以校正输入图像的色温 PSM使用计算出的色温之差，并显示补偿白平衡增益的图像。 因此，可以根据各种环境的TV观看条件下的输入图像和外部光源的PSM来校正色温之间的差异，并且保持输出图像的清晰的白平衡。

    Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts
    5.
    发明授权
    Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts 有权
    形成半导体绝缘（SOI）场效应晶体管与体接触的方法

    公开(公告)号：US08263444B2

    公开(公告)日：2012-09-11

    申请号：US13229050

    申请日：2011-09-09

    Applicant: Sung-young Lee ,  Dong-suk Shin

    Inventor： Sung-young Lee ,  Dong-suk Shin

    IPC: H01L21/84

    CPC classification number: H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

    Abstract: Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

    Abstract translation: 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

    Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts
    6.
    发明授权
    Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts 有权
    形成半导体绝缘（SOI）场效应晶体管与体接触的方法

    公开(公告)号：US08017461B2

    公开(公告)日：2011-09-13

    申请号：US12721944

    申请日：2010-03-11

    Applicant: Sung-young Lee ,  Dong-suk Shin

    Inventor： Sung-young Lee ,  Dong-suk Shin

    IPC: H01L21/84

    CPC classification number: H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

    Abstract: Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

    Abstract translation: 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

    Semiconductor device and method of manufacturing same
    7.
    发明授权
    Semiconductor device and method of manufacturing same 有权
    半导体装置及其制造方法

    公开(公告)号：US07989296B2

    公开(公告)日：2011-08-02

    申请号：US12015646

    申请日：2008-01-17

    Applicant: Sung-young Lee ,  Dong-suk Shin

    Inventor： Sung-young Lee ,  Dong-suk Shin

    IPC: H01L21/336

    CPC classification number: H01L29/78639 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78654 ,  H01L29/78687

    Abstract: A semiconductor device and related method of manufacture are disclosed. The semiconductor device comprises a gate electrode formed on a semiconductor substrate, an active region containing spaces formed below the gate electrode, a channel region formed between the gate electrode and the spaces, and source and drain regions formed on opposite sides of the gate electrode within the active region. The spaces are formed by etching a semiconductor layer formed below the gate electrode in the active region.

    Abstract translation: 公开了一种半导体器件及其制造方法。 半导体器件包括形成在半导体衬底上的栅电极，形成在栅电极下方的空间的有源区，形成在栅电极和空间之间的沟道区，以及形成在栅电极的相对侧上的源极和漏极区 活跃区域。 通过在活性区域中蚀刻形成在栅电极下方的半导体层来形成空间。

    Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) Including Recessed Channel Regions
    8.
    发明申请
    Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) Including Recessed Channel Regions 审中-公开
    金属氧化物半导体场效应晶体管（MOSFET）包括嵌入式通道区域

    公开(公告)号：US20110079831A1

    公开(公告)日：2011-04-07

    申请号：US12966362

    申请日：2010-12-13

    Applicant: Chang-Woo Oh ,  Dong-Gun Park ,  Sung-Young Lee ,  Chang-Sub Lee ,  Jeong-Dong Choe

    Inventor： Chang-Woo Oh ,  Dong-Gun Park ,  Sung-Young Lee ,  Chang-Sub Lee ,  Jeong-Dong Choe

    IPC: H01L29/772

    CPC classification number: H01L29/66583 ,  H01L29/1037 ,  H01L29/66651

    Abstract: Unit cells of metal oxide semiconductor (MOS) transistors are provided having an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor includes a source region, a drain region and a gate. The gate is between the source region and the drain region. A channel region is provided between the source and drain regions. The channel region has a recessed region that is lower than bottom surfaces of the source and drain regions. Related methods of fabricating transistors are also provided.

    Abstract translation: 金属氧化物半导体（MOS）晶体管的单位电池在集成电路基板上具有集成电路基板和MOS晶体管。 MOS晶体管包括源极区，漏极区和栅极。 栅极在源极区域和漏极区域之间。 在源区和漏区之间提供沟道区。 沟道区具有比源区和漏区的底表面低的凹陷区域。 还提供了制造晶体管的相关方法。

    Method for controlling user access in sensor networks
    9.
    发明申请
    Method for controlling user access in sensor networks 审中-公开
    控制传感器网络中用户访问的方法

    公开(公告)号：US20110055553A1

    公开(公告)日：2011-03-03

    申请号：US12547689

    申请日：2009-08-26

    Applicant: Sung-Young Lee ,  Young-Koo Lee ,  Xuan Hung Le

    Inventor： Sung-Young Lee ,  Young-Koo Lee ,  Xuan Hung Le

    IPC: H04L29/06 ,  G06F21/00

    CPC classification number: H04L9/083 ,  H04L9/3242 ,  H04L63/061 ,  H04L63/0823 ,  H04L67/12 ,  H04L2209/805

    Abstract: A method for implement an energy-efficient user access control to wireless sensor networks is disclosed. A user creates a secret key and sending it to a sensor. The sensor builds a first MAC value by the secret key and sends it to the Key Distribution Center which builds a second MAC value and sending it to the sensor. The sensor decrypts the second MAC value to get a random number, and builds a third MAC value by the random number. The third MAC value is used by the user to authenticate the sensor.

    Abstract translation: 公开了一种用于实现对无线传感器网络的节能用户访问控制的方法。 用户创建密钥并将其发送到传感器。 传感器通过密钥构建第一个MAC值，并将其发送到密钥分发中心，该中心构建第二个MAC值并将其发送到传感器。 传感器解密第二MAC值以获得随机数，并通过随机数建立第三MAC值。 用户使用第三个MAC值来认证传感器。

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