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    SUBSTRATE POLISHING APPARATUS
    1.
    发明申请
    SUBSTRATE POLISHING APPARATUS 有权
    基板抛光装置

    公开(公告)号：US20140051249A1

    公开(公告)日：2014-02-20

    申请号：US13968623

    申请日：2013-08-16

    Applicant: Toho Engineering Co., Ltd.

    Inventor： Tatsutoshi SUZUKI ,  Eisuke SUZUKI ,  Daisuke SUZUKI

    IPC: H01L21/306

    CPC classification number: H01L21/30625 ,  B24B37/30 ,  B24B57/02

    Abstract: A substrate polishing apparatus includes a retainer for holding a substrate and substrate rotating device that spins the retainer around a first rotational axis perpendicular to a to-be-polished surface of the substrate. A platen includes an abrasive pad disposed opposite of the to-be-polished surface of the substrate. A platen rotating device spins the platen around a second rotational axis perpendicular to the abrasive pad. A liquid storage chamber includes a wall portion surrounding the outer periphery of the substrate. One end of the wall portion is positionable in a liquid-tight manner with the abrasive pad to define a liquid storage space for retaining a polishing liquid around the outer periphery of the substrate.

    Abstract translation: 基板研磨装置具有保持基板和基板旋转装置，基板旋转装置围绕与基板的被抛光面垂直的第一旋转轴线旋转保持器。 压板包括与衬底的待抛光表面相对设置的磨料垫。 压板旋转装置围绕垂直于研磨垫的第二旋转轴旋转压板。 储液室包括围绕基板的外周的壁部。 壁部分的一端可以以液密的方式与研磨垫定位以限定用于将抛光液体保持在基底的外周边周围的液体储存空间。

    METHOD FOR PROCESSING WIDE-BANDGAP SEMICONDUCTOR SUBSTRATE AND APPARATUS THEREFOR
    4.
    发明申请
    METHOD FOR PROCESSING WIDE-BANDGAP SEMICONDUCTOR SUBSTRATE AND APPARATUS THEREFOR 审中-公开
    用于处理宽带半导体衬底的方法及其装置

    公开(公告)号：US20170069506A1

    公开(公告)日：2017-03-09

    申请号：US15125308

    申请日：2015-03-11

    Applicant: OSAKA UNIVERSITY ,  TOHO Engineering Co., Ltd.

    Inventor： Kazuto YAMAUCHI ,  Ai ISOHASHI ,  Yasuhisa SANO

    IPC: H01L21/306 ,  H01L21/04

    CPC classification number: H01L21/30612 ,  H01L21/02019 ,  H01L21/0445 ,  H01L21/0475 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/32134 ,  H01L21/67086 ,  H01L29/1608

    Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.

    Abstract translation: 提供了一种用于宽带隙半导体衬底的处理方法及其不使用研磨剂或不含磨粒的设备，或者根本没有使用具有大的环境负担的溶液可以处理单晶，SiC，GaN，AlGaN 或AlN以各种加工速度，可以获得比通过CMP完成的表面的质量更高质量的表面，并且还具有与洁净室良好的相容性。 使用具有促进工件（5）的直接水解或促进工件表面上的氧化膜的水解的功能的催化物质作为加工基准面（3）。 在水（1）的存在下，工件在预定压力下与处理参考平面接触或非常接近。

    Planarization processing device
    5.
    发明授权
    Planarization processing device 有权

    公开(公告)号：US10770301B2

    公开(公告)日：2020-09-08

    申请号：US15751699

    申请日：2017-03-10

    Applicant: TOHO ENGINEERING CO., LTD.

    Inventor： Tatsutoshi Suzuki ,  Eisuke Suzuki ,  Daisuke Suzuki

    IPC: H01L21/306 ,  H01L21/321 ,  B24B37/07 ,  B24B1/04 ,  B24B37/34 ,  B24B1/00 ,  B24B41/00

    Abstract: A planarization processing device for polishing a substrate, e.g., a semiconductor wafer, includes two planarization processing sections (SP1, SP2) that each include a holder (62) for holding a workpiece (W), a drive motor (71) that rotates the holder (62), a support plate (4) holds a pad (5), a linear guide (3) that guides reciprocal movement of the support plate (4) in a direction parallel to the surface of the pad (5), and a drive cylinder (72) that advances the holder (62) or the support plate (4) in a direction that intersects the surface of the workpiece W or the pad (5) to cause the opposing surfaces of the workpiece and the pad (5) to be at least proximal to each other. A primary driver (PD) causes the support plates (4) of the planarization processing sections (SP1, SP2) to reciprocate along the same straight line in opposite phases.

    Substrate polishing apparatus
    7.
    发明授权
    Substrate polishing apparatus 有权
    基材抛光装置

    公开(公告)号：US09082715B2

    公开(公告)日：2015-07-14

    申请号：US13968623

    申请日：2013-08-16

    Applicant: Toho Engineering Co., Ltd.

    Inventor： Tatsutoshi Suzuki ,  Eisuke Suzuki ,  Daisuke Suzuki

    IPC: H01L21/306 ,  B24B37/30 ,  B24B57/02

    CPC classification number: H01L21/30625 ,  B24B37/30 ,  B24B57/02

    Abstract: A substrate polishing apparatus includes a retainer for holding a substrate and substrate rotating device that spins the retainer around a first rotational axis perpendicular to a to-be-polished surface of the substrate. A platen includes an abrasive pad disposed opposite of the to-be-polished surface of the substrate. A platen rotating device spins the platen around a second rotational axis perpendicular to the abrasive pad. A liquid storage chamber includes a wall portion surrounding the outer periphery of the substrate. One end of the wall portion is positionable in a liquid-tight manner with the abrasive pad to define a liquid storage space for retaining a polishing liquid around the outer periphery of the substrate.

    Abstract translation: 基板研磨装置具有保持基板和基板旋转装置，基板旋转装置围绕与基板的被抛光面垂直的第一旋转轴线旋转保持器。 压板包括与衬底的待抛光表面相对设置的磨料垫。 压板旋转装置围绕垂直于研磨垫的第二旋转轴旋转压板。 储液室包括围绕基板的外周的壁部。 壁部分的一端可以以液密的方式与研磨垫定位以限定用于将抛光液体保持在基底的外周边周围的液体储存空间。

    Method for processing wide-bandgap semiconductor substrate and apparatus therefor
    8.
    发明授权
    Method for processing wide-bandgap semiconductor substrate and apparatus therefor 有权

    公开(公告)号：US10163645B2

    公开(公告)日：2018-12-25

    申请号：US15125308

    申请日：2015-03-11

    Applicant: OSAKA UNIVERSITY ,  TOHO Engineering Co., Ltd.

    Inventor： Kazuto Yamauchi ,  Ai Isohashi ,  Yasuhisa Sano

    IPC: H01L21/306 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/302 ,  H01L21/04 ,  H01L21/67 ,  H01L29/16

    Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.

    PLANARIZATION PROCESSING DEVICE
    9.
    发明申请
    PLANARIZATION PROCESSING DEVICE 审中-公开

    公开(公告)号：US20180277380A1

    公开(公告)日：2018-09-27

    申请号：US15751699

    申请日：2017-03-10

    Applicant: TOHO ENGINEERING CO., LTD.

    Inventor： Tatsutoshi SUZUKI ,  Eisuke SUZUKI ,  Daisuke SUZUKI

    IPC: H01L21/306 ,  B24B37/07 ,  B24B1/04 ,  B24B37/34 ,  H01L21/321

    CPC classification number: H01L21/30625 ,  B24B1/00 ,  B24B1/04 ,  B24B37/07 ,  B24B37/34 ,  B24B41/007 ,  H01L21/306 ,  H01L21/32115

    Abstract: A planarization processing device for polishing a substrate, e.g., a semiconductor wafer, includes two planarization processing sections (SP1, SP2) that each include a holder (62) for holding a workpiece (W), a drive motor (71) that rotates the holder (62), a support plate (4) holds a pad (5), a linear guide (3) that guides reciprocal movement of the support plate (4) in a direction parallel to the surface of the pad (5), and a drive cylinder (72) that advances the holder (62) or the support plate (4) in a direction that intersects the surface of the workpiece W or the pad (5) to cause the opposing surfaces of the workpiece and the pad (5) to be at least proximal to each other. A primary driver (PD) causes the support plates (4) of the planarization processing sections (SP1, SP2) to reciprocate along the same straight line in opposite phases.

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