公开(公告)号：US06201401B1

公开(公告)日：2001-03-13

申请号：US09197611

申请日：1998-11-23

Applicant: Louis C. Hellemans ,  Thomas Trenkler ,  Peter De Wolf ,  Wilfried Vandervorst

Inventor： Louis C. Hellemans ,  Thomas Trenkler ,  Peter De Wolf ,  Wilfried Vandervorst

IPC: G01R3126

CPC classification number: G01R31/2648 ,  G01Q60/30 ,  G01R29/12 ,  G01R31/2831 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/014 ,  Y10S977/854 ,  H01L2924/00

Abstract: Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing at least one conductor in contact with the semi-conductor element using a scanning proximity microscope while injecting a substantially zero current in the semiconductor element with the conductor, measuring an electrical potential in the conductor while injecting a substantially zero current in the semiconductor element with the conductor, changing the position of the conductor, and repeating the measuring and changing steps.

Abstract translation: 通过在半导体元件上施加一个或多个电压来测量半导体元件中的电位，使用扫描接近显微镜将至少一个导体与半导体元件接触，同时在半导体元件中注入基本零电流的导体 测量导体中的电位，同时在半导体元件中与导体注入大致零电流，改变导体的位置，并重复测量和改变步骤。

公开(公告)号：US6091248A

公开(公告)日：2000-07-18

申请号：US32906

申请日：1998-03-02

Applicant: Louis C. Hellemans ,  Thomas Trenkler ,  Peter De Wolf ,  Wilfried Vandervorst

Inventor： Louis C. Hellemans ,  Thomas Trenkler ,  Peter De Wolf ,  Wilfried Vandervorst

IPC: G01Q70/14 ,  G01R1/067 ,  G01R31/26 ,  G01R31/28 ,  H01L21/66 ,  G01K31/26 ,  H01J37/26

CPC classification number: G01R31/2648 ,  G01Q60/30 ,  G01R1/06711 ,  G01R31/2831 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/014 ,  Y10S977/854

Abstract: Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing at least one conductor in contact with the semi-conductor element using a scanning proximity microscope while injecting a substantially zero current in the semiconductor element with the conductor, measuring an electrical potential in the conductor while injecting a substantially zero current in the semiconductor element with the conductor, changing the position of the conductor, and repeating the measuring and changing steps.

Abstract translation: 通过在半导体元件上施加一个或多个电压来测量半导体元件中的电位，使用扫描接近显微镜将至少一个导体与半导体元件接触，同时在半导体元件中注入基本零电流的导体 测量导体中的电位，同时在半导体元件中与导体注入大致零电流，改变导体的位置，并重复测量和改变步骤。

公开(公告)号：US06933829B2

公开(公告)日：2005-08-23

申请号：US10450593

申请日：2001-12-13

Applicant: Harald Schöpf ,  Thomas Trenkler ,  Chong Wang

Inventor： Harald Schöpf ,  Thomas Trenkler ,  Chong Wang

IPC: H01C7/02 ,  H01C1/02 ,  H01C1/028 ,  H01C7/10

CPC classification number: H01C1/028 ,  H01C1/02

Abstract: An electrical component includes a base, connector elements connected to the base, an intermediate layer on a surface of the base, and a protective layer on the intermediate layer. The intermediate layer and the protective layer are produced from a same material. The material contains a solvent. The solvent has a negative affect on electrical properties of the component. The intermediate layer has a lower content of solvent than the protective layer.

Abstract translation: 电气部件包括基座，连接到基座的连接器元件，基座表面上的中间层以及中间层上的保护层。 中间层和保护层由相同的材料制成。 该材料含有溶剂。 溶剂对组分的电性能有负面影响。 中间层的溶剂含量低于保护层。

公开(公告)号：US5723981A

公开(公告)日：1998-03-03

申请号：US673616

申请日：1996-06-25

Applicant: Louis C. Hellemans ,  Thomas Trenkler ,  Peter De Wolf ,  Wilfried Vandervorst

Inventor： Louis C. Hellemans ,  Thomas Trenkler ,  Peter De Wolf ,  Wilfried Vandervorst

IPC: G01Q60/40 ,  G01Q10/00 ,  G01Q60/24 ,  G01Q60/30 ,  H01L21/66 ,  G01R31/26 ,  H01J37/26

CPC classification number: G01Q60/30 ,  B82Y35/00 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/014 ,  Y10S977/854

Abstract: Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing one or more conductors in contact with the semi-conductor element using a scanning proximity microscope, calibrating the contact force between the conductors and the semiconductor element and measuring an electrical potential in the semi-conductor element with at least one of the conductors while injecting a substantially zero current in the semiconductor element. To measure the electrical potential distribution within the semiconductor, the position of at least one of the conductors is changed and the electric potential re-measured.

Abstract translation: 通过在半导体元件上施加一个或多个电压来测量半导体元件中的电位，使用扫描接近度显微镜将一个或多个导体与半导体元件接触，校准导体和半导体元件之间的接触力，以及 在所述半导体元件中注入基本为零的电流的同时，用至少一个所述导体测量所述半导体元件中的电位。 为了测量半导体内的电位分布，至少一个导体的位置被改变并且电位被重新测量。