公开(公告)号：US06770504B2

公开(公告)日：2004-08-03

申请号：US10337011

申请日：2003-01-06

Applicant: Robert D. Horning ,  McDonald Robinson ,  Timothy Louis Scullard

Inventor： Robert D. Horning ,  McDonald Robinson ,  Timothy Louis Scullard

IPC: H01L2100

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  Y10T74/12

Abstract: A method for controlling bow in wafers which utilize doped layers is described. The method includes depositing a silicon-germanium layer onto a substrate, depositing an undoped buffer layer onto the silicon-germanium layer, and depositing a silicon-baron layer onto the undoped layer.

Abstract translation: 描述了一种利用掺杂层在晶片中控制弓形的方法。 该方法包括将硅 - 锗层沉积到衬底上，将未掺杂的缓冲层沉积到硅 - 锗层上，以及将硅 - 硅酮层沉积到未掺杂的层上。