公开(公告)号：US06602112B2

公开(公告)日：2003-08-05

申请号：US09764817

申请日：2001-01-18

Applicant: Tony Quan Tran ,  Vikas Sachan ,  David Gettman ,  Terence M. Thomas ,  Craig D. Lack ,  Peter A. Burke

Inventor： Tony Quan Tran ,  Vikas Sachan ,  David Gettman ,  Terence M. Thomas ,  Craig D. Lack ,  Peter A. Burke

IPC: B24B100

CPC classification number: B24B37/013 ,  B24B31/16 ,  B24B37/042 ,  B24B49/04 ,  B24B49/12

Abstract: A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.

Abstract translation: 一种通过使用抛光垫和过氧化氢在半导体衬底上抛光金属表面的方法，并且通过抛光从半导体衬底去除金属颗粒，并将该颗粒溶解在过氧化氢中。