公开(公告)号：US10700233B2

公开(公告)日：2020-06-30

申请号：US16150921

申请日：2018-10-03

Applicant: THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITY ,  VALORBEC, L.P.

Inventor： Monireh Moayedi Pour Fard ,  Christopher Williams ,  Glenn Cowan ,  Odile Liboiron-Ladouceur

IPC: H01L31/103 ,  H01L27/144 ,  G01J1/16

Abstract: There is described a photodetector for detecting incoming infrared light. The photodetector generally has a substrate; an i-type semiconductor region extending along the substrate, the i-type semiconductor region being sandwiched between a p-type semiconductor region and an n-type semiconductor region; a grating coupler being optically connected to one of two ends of the i-type semiconductor region, the grating coupler redirecting incoming infrared light into and along the i-type semiconductor region via the one of the two ends of the i-type semiconductor region for propagation of infrared light along the i-type semiconductor region; and a photocurrent detection circuit electrically connected to the p-type semiconductor region and to the n-type semiconductor region for detecting a photocurrent resulting from said propagation.

公开(公告)号：US20190103503A1

公开(公告)日：2019-04-04

申请号：US16150921

申请日：2018-10-03

Applicant: THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING / MCGILL UNIVERSITY ,  VALORBEC, L.P.

Inventor： Monireh MOAYEDI POUR FARD ,  Christopher WILLIAMS ,  Glenn COWAN ,  Odile LIBOIRON-LADOUCEUR

IPC: H01L31/103 ,  G01J1/16 ,  H01L27/144

CPC classification number: H01L31/103 ,  G01J1/16 ,  H01L27/144

Abstract: There is described a photodetector for detecting incoming infrared light. The photodetector generally has a substrate; an i-type semiconductor region extending along the substrate, the i-type semiconductor region being sandwiched between a p-type semiconductor region and an n-type semiconductor region; a grating coupler being optically connected to one of two ends of the i-type semiconductor region, the grating coupler redirecting incoming infrared light into and along the i-type semiconductor region via the one of the two ends of the i-type semiconductor region for propagation of infrared light along the i-type semiconductor region; and a photocurrent detection circuit electrically connected to the p-type semiconductor region and to the n-type semiconductor region for detecting a photocurrent resulting from said propagation.