公开(公告)号：US20050271817A1

公开(公告)日：2005-12-08

申请号：US10523374

申请日：2003-07-29

Applicant: Yunsoo Kim ,  Ki-Seok An ,  Sun-Sook Lee ,  Taek-Mo Chung ,  Wontae Cho ,  Kiwhan Sung

Inventor： Yunsoo Kim ,  Ki-Seok An ,  Sun-Sook Lee ,  Taek-Mo Chung ,  Wontae Cho ,  Kiwhan Sung

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC classification number: C23C16/45553 ,  C23C16/403

Abstract: An aluminum oxide film is formed on a substrate by a process comprising A) bringing the vapor of a dialkylaluminum alkoxide into contact with the substrate mounted in a deposition reactor so that an aluminum-containing adsorption layer is formed on the substrate; B) removing the unreacted aluminum compound and by-products from the reactor; C) introducing an oxygen source into the reactor so that the oxygen source reacts with the aluminum-containing adsorption layer to form an aluminum oxide layer, and D) removing the unreacted oxygen source and by-products from the reactor.

Abstract translation: 通过包括以下方法在基材上形成氧化铝膜：A）使二烷基铝醇盐的蒸气与安装在沉积反应器中的基板接触，使得在基板上形成含铝吸附层; B）从反应器中除去未反应的铝化合物和副产物; C）将氧源引入反应器，使得氧源与含铝吸附层反应形成氧化铝层，以及D）从反应器中除去未反应的氧源和副产物。