RESIN PATTERN, METHOD FOR PRODUCING THE PATTERN, METHOD FOR PRODUCING MEMS STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING PLATED PATTERN
    1.
    发明申请
    RESIN PATTERN, METHOD FOR PRODUCING THE PATTERN, METHOD FOR PRODUCING MEMS STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING PLATED PATTERN 有权
    树脂图案,用于生产图案的方法,用于制造MEMS结构的方法,制造半导体器件的方法以及用于生产电镀图案的方法

    公开(公告)号:US20120231396A1

    公开(公告)日:2012-09-13

    申请号:US13416870

    申请日:2012-03-09

    CPC classification number: G03F7/40

    Abstract: There is provided that a method for producing a resin pattern, and the method includes at least the steps (1) to (7) in this order; (1) a coating step of coating a photosensitive resin composition on a substrate; (2) a solvent removal step of removing the solvent from the applied photosensitive resin composition; (3) an exposure step of patternwise exposing the photosensitive resin composition from which the solvent has been removed, to an active radiation; (4) a development step of developing the exposed photosensitive resin composition using an aqueous developer liquid; (5) an overcoating step of providing an overcoat layer on the developed photosensitive resin composition; (6) a heat-treating step of heat-treating the photosensitive resin composition on which the overcoat layer has been provided; and (7) a removal step of removing the overcoat layer.

    Abstract translation: 提供树脂图案的制造方法,该方法至少包括步骤(1)至(7); (1)将感光性树脂组合物涂布在基材上的涂布工序; (2)从涂布的感光性树脂组合物中除去溶剂的溶剂除去工序; (3)将从其中除去溶剂的感光性树脂组合物图案化地曝光到活性辐射的曝光步骤; (4)使用含水显影液显影曝光的感光性树脂组合物的显影步骤; (5)在显影的感光性树脂组合物上设置外涂层的外涂层工序; (6)对其上设置有外涂层的感光性树脂组合物进行热处理的热处理工序; 和(7)去除外涂层的去除步骤。

    Positive resist composition
    2.
    发明授权
    Positive resist composition 有权
    正抗蚀剂组成

    公开(公告)号:US07255971B2

    公开(公告)日:2007-08-14

    申请号:US10244070

    申请日:2002-09-16

    Abstract: A positive resist composition comprising the components of: (A) a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation; (B) a resin that is insoluble or slightly soluble in alkalis, but becomes alkali-soluble under an action of an acid; (C) a basic compound; and (D) a compound comprising at least three hydroxyl groups or at least three substituted hydroxyl groups, and comprising at least one cyclic structure.

    Abstract translation: 一种正型抗蚀剂组合物,其包含以下成分:(A)在用光化射线和辐射之一照射时能够产生酸的化合物; (B)不溶于或微溶于碱的树脂,但在酸的作用下变为碱溶性的树脂; (C)碱性化合物; 和(D)包含至少三个羟基或至少三个取代的羟基并且包含至少一个环状结构的化合物。

    Positive photosensitive resin composition
    3.
    发明授权
    Positive photosensitive resin composition 有权
    正型感光性树脂组合物

    公开(公告)号:US06806022B1

    公开(公告)日:2004-10-19

    申请号:US09295329

    申请日:1999-04-21

    Abstract: Provided is a positive photosensitive resin composition comprising (A) a polymer which has alicyclic hydrocarbon skeletons and composes under the action of an acid to be rendered soluble in alkali, (B) a compound which generates an acid upon irradiation with actinic rays, (C) a nitrogen-containing basic compound, (D) at least one of a fluorine-containing surfactant and a silicon-containing surfactant and (E) a solvent. The composition can exhibit better characteristics when the solvent (E) is a combination of specified solvents.

    Abstract translation: 本发明提供一种正型感光性树脂组合物,其包含(A)具有脂环族烃骨架并在酸性作用下组成的聚合物,使其易溶于碱,(B)在光化射线照射时产生酸的化合物,(C )含氮碱性化合物,(D)含氟表面活性剂和含硅表面活性剂中的至少一种和(E)溶剂。 当溶剂(E)是特定溶剂的组合时,组合物可以表现出更好的特性。

    Positive photoresist composition
    4.
    发明授权
    Positive photoresist composition 有权
    正光致抗蚀剂组合物

    公开(公告)号:US06743562B2

    公开(公告)日:2004-06-01

    申请号:US10097983

    申请日:2002-03-15

    CPC classification number: G03F7/0045 G03F7/0392 G03F7/0397 Y10S430/106

    Abstract: A positive photoresist composition comprising the components of: (a) a resin which decomposes by the action of an acid, thereby having an increased solubility in an alkali developer; and (b) a compound which is represented by the formula (1) and generates an acid by exposure to active rays or radiation, and a compound which is represented by the formula (2) and generates an acid by exposure to active rays or radiation.

    Abstract translation: 一种正性光致抗蚀剂组合物,其包含以下组分:(a)通过酸的作用分解的树脂,从而在碱性显影剂中具有增加的溶解度; 和(b)由式(1)表示并通过暴露于活性射线或辐射产生酸的化合物和由式(2)表示的化合物并通过暴露于活性射线或辐射产生酸 。

    Positive resist composition
    5.
    发明授权
    Positive resist composition 失效
    正抗蚀剂组成

    公开(公告)号:US06692897B2

    公开(公告)日:2004-02-17

    申请号:US09902793

    申请日:2001-07-12

    Abstract: A positive resist composition comprises: (A) a resin having an aliphatic cyclic hydrocarbon group and increasing the solubility to an alkali developer by the action of an acid; (B) a compound generating an acid upon irradiation with an actinic ray or radiation; and (C) a nitrogen-containing compound having in the molecule at least one partial structure represented by following formula (I).

    Abstract translation: 正型抗蚀剂组合物包括:(A)具有脂族环状烃基并通过酸作用增加对碱性显影剂的溶解度的树脂; (B)在用光化射线或辐射照射时产生酸的化合物; 和(C)在分子中具有由下式(I)表示的至少一种部分结构的含氮化合物。

    Positive-working photoresist composition
    6.
    发明授权
    Positive-working photoresist composition 有权
    正光刻胶组合物

    公开(公告)号:US06596458B1

    公开(公告)日:2003-07-22

    申请号:US09563436

    申请日:2000-05-03

    CPC classification number: G03F7/0397 G03F7/0045 Y10S430/111

    Abstract: Disclosed is a positive-working photoresist composition having reduced development defects, and excellent in resist pattern profiles and in the resolving power of contact holes, which comprises (i) a compound generating an acid by irradiation of active light or radiation, and (ii) a resin containing repeating units of at least one kind selected from the group consisting of (a) repeating units having alkali-soluble groups each protected with at least one group selected from the group consisting of groups containing alicyclic hydrocarbon structures represented by specific general formulas (pI) to (pVI), (b) repeating units represented by specific general formula (II) and (c) repeating units represented by specific general formulas (III-a) to (III-d), and decomposed by the action of an acid to increase the solubility of the resin into an alkali.

    Abstract translation: 公开了具有减少的显影缺陷,抗蚀剂图案轮廓和接触孔分辨能力优异的正性光致抗蚀剂组合物,其包括(i)通过活性光或辐射的照射产生酸的化合物,和(ii) 含有重复单元的树脂,所述重复单元选自(a)具有碱溶性基团的重复单元,各自被至少一个选自由特定通式表示的脂环族烃结构的基团所选择的基团保护的基团 pI)至(pVI),(b)由特定通式(II)表示的重复单元和(c)由特定通式(III-a)至(III-d)表示的重复单元,并通过 酸以增加树脂在碱中的溶解度。

    Positive working photoresist composition
    7.
    发明授权
    Positive working photoresist composition 失效
    正工作光致抗蚀剂组成

    公开(公告)号:US5709977A

    公开(公告)日:1998-01-20

    申请号:US677143

    申请日:1996-07-09

    CPC classification number: G03F7/0236

    Abstract: Provided is a positive working photoresist composition which comprises a 1,2-quinonediazide compound and an alkali-soluble resin obtained by condensing a specified phenol compound, formaldehyde and a specified aromatic aldehyde having at least one alkoxy substituent and at least one hydroxy substituent.

    Abstract translation: 提供一种正性光致抗蚀剂组合物,其包含1,2-醌二叠氮化合物和通过使特定的酚化合物,甲醛和具有至少一个烷氧基取代基的特定芳香醛和至少一个羟基取代基缩合而获得的碱溶性树脂。

    Positive photoresist composition
    8.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5629128A

    公开(公告)日:1997-05-13

    申请号:US531081

    申请日:1995-09-20

    CPC classification number: G03F7/022

    Abstract: A positive photoresist composition is described, which comprises an alkali-soluble resin and 1,2-naphthoquinone-diazido-5-(and/or -4-)sulfonate of a polyhydroxy compound represented by the following formula (I): ##STR1## wherein R.sub.1 to R.sub.11 are the same or different and each represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an alkoxyl group, an acyl group or a cycloalkyl group, provided that at least one of R.sub.1 to R.sub.11 is a cycloalkyl group; A represents -CH(R.sub.12)-, in which R.sub.12 represents a hydrogen atom or an alkyl group; and m represents 2 or 3.

    Abstract translation: 描述了一种正型光致抗蚀剂组合物,其包含由下式(I)表示的多羟基化合物的碱溶性树脂和1,2-萘醌 - 二叠氮基-5-(和/或-4-)磺酸盐: (I)其中R 1至R 11相同或不同,并且各自表示氢原子,卤素原子,烷基,芳基,烷氧基,酰基或环烷基,条件是R 1至R 11中的至少一个 R11为环烷基; A表示-CH(R 12) - ,其中R 12表示氢原子或烷基; m表示2或3。

    Positive-working photoresist composition
    9.
    发明授权
    Positive-working photoresist composition 失效
    正光刻胶组合物

    公开(公告)号:US5609982A

    公开(公告)日:1997-03-11

    申请号:US357748

    申请日:1994-12-16

    CPC classification number: G03F7/022

    Abstract: The present invention provides a positive-working photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a specific water-insoluble alkali-soluble low molecular compound, wherein the high-performance liquid chromatography of the ester with an ultraviolet ray at 254 nm shows that the patterns corresponding to the diester components and complete ester component of the ester each fall within the specific range and a positive-working photoresist composition comprising a water-insoluble alkali-soluble resin, a water-insoluble alkali-soluble low molecular compound, and an ionization-sensitive radioactive compound which comprises a mixture of a naphthoquinone-diazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having three phenolic hydroxyl groups as an ionization-sensitive radioactive compound (A) and a naphthoquinonediazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having four phenolic hydroxyl groups as an ionization-sensitive radioactive compound (B) in an amount of 30% or more by weight based on the total amount of the ionization-sensitive radioactive compound.

    Abstract translation: 本发明提供一种正性光致抗蚀剂组合物,其包含碱溶性树脂和特定的水不溶性碱溶性低分子化合物的1,2-萘醌二叠氮化物-5-(和/或-4-)磺酸酯,其中 使用254nm紫外线的酯的高效液相色谱显示对应于酯的二酯组分和完全酯组分的图案分别落在特定范围内,并且包含非水溶性的正性光致抗蚀剂组合物 碱溶性树脂,水不溶性碱溶性低分子化合物和电离敏感性放射性化合物,其包含具有三个酚羟基的水不溶性碱溶性低分子化合物的萘醌二叠氮烷磺酸二酯的混合物作为 电离敏感的放射性化合物(A)和不溶于水的碱溶性低分子化合物的萘醌二叠氮化物二酯 具有基于电离敏感性放射性化合物的总量为30重量%以上的量的四个酚羟基作为电离敏感性放射性化合物(B)的量。

    Positive working photoresist composition
    10.
    发明授权
    Positive working photoresist composition 失效
    正工作光致抗蚀剂组成

    公开(公告)号:US5554481A

    公开(公告)日:1996-09-10

    申请号:US361697

    申请日:1994-12-22

    CPC classification number: C08G8/20 G03F7/022 G03F7/023

    Abstract: A positive working photoresist composition sensitive to radiation, having high resolving power, high sensitivity, and excellent storage stability, and further forming a pattern capable of accurately reproducing a mask size in a wide range of photomask line width. The present invention has been obtained by a composition containing at least one of a 1,2-napthoquinonediazido-5-sulfonic acid ester of a polyhydroxy compound and a 1,2-napthoquinonediazido-4-sulfonic acid ester of a polyhydroxy compound in combination with at least one alkali-soluble resin.

    Abstract translation: 对辐射敏感的正性光致抗蚀剂组合物,具有高分辨能力,高灵敏度和优异的储存稳定性,并进一步形成能够在宽范围的光掩模线宽度下精确地再现掩模尺寸的图案。 本发明是通过含有多羟基化合物的1,2-萘醌二叠氮基-5-磺酸酯和多羟基化合物的1,2-萘醌二叠氮基-4-磺酸酯中的至少一种的组合物而得到的, 至少一种碱溶性树脂。

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