公开(公告)号：US07135406B2

公开(公告)日：2006-11-14

申请号：US10983681

申请日：2004-11-09

Applicant: Jian-Hong Lin ,  Ying-Jen Kao ,  Jye-Yen Cheng

Inventor： Jian-Hong Lin ,  Ying-Jen Kao ,  Jye-Yen Cheng

IPC: H01L21/44 ,  H01L21/4763

CPC classification number: H01L21/76808

Abstract: Methods for forming openings in damascene structures, such as dual damascene structures are provided, using plug materials having varied etching rates. In one embodiment, a semiconductor substrate is provided with a low-k material layer formed thereabove, the low-k material layer having an upper surface and at least one via opening formed therethrough. A first plug material layer is formed over the low-k material layer and filled in the via opening, the first plug material layer having a first etching rate. The first plug material layer is etched back to form a first plug partially filling the via opening. A second plug material layer is formed over the low-k material layer and the first plug. The second plug material layer is etched back to form a second plug partially below the upper surface of the low-k material layer, the second plug material layer having a second etching rate higher than the first etching rate.

Abstract translation: 提供了在镶嵌结构中形成开口的方法，例如双镶嵌结构，使用具有不同蚀刻速率的塞子材料。 在一个实施例中，半导体衬底设置有形成在其上的低k材料层，低k材料层具有上表面和至少一个通孔形成。 第一插塞材料层形成在低k材料层上并填充在通孔中，第一插塞材料层具有第一蚀刻速率。 将第一插塞材料层回蚀刻以形成部分填充通孔开口的第一插头。 在低k材料层和第一插塞上形成第二插塞材料层。 第二插塞材料层被回蚀刻以在低k材料层的上表面部分下方形成第二插头，第二插塞材料层具有高于第一蚀刻速率的第二蚀刻速率。

公开(公告)号：US5958087A

公开(公告)日：1999-09-28

申请号：US248349

申请日：1999-02-08

Applicant: Wen-Yih Liao ,  Chien-Liang Huang ,  Der-Ray Huang ,  Don-Yau Chiang ,  Andrew Teh Hu ,  Hong-Ji Lee ,  Shi-Jae Ye ,  Ying-Jen Kao

Inventor： Wen-Yih Liao ,  Chien-Liang Huang ,  Der-Ray Huang ,  Don-Yau Chiang ,  Andrew Teh Hu ,  Hong-Ji Lee ,  Shi-Jae Ye ,  Ying-Jen Kao

IPC: C09B67/22 ,  C09B67/32 ,  C09B67/34

CPC classification number: C09B67/0034

Abstract: A cyanine dye for using in high density optical disc recording medium, having the following structure: ##STR1## wherein R represents 4-methoxycarbonyl benzyl group, X.sup.- represents an acid anion, and n represents an integer of 1 or 2. This cyanine dye is suitable for use as a .lambda.=450 nm.about.650 nm visible light-absorbing organic dye useful as a high density optical disc recording medium.

Abstract translation: 一种用于高密度光盘记录介质的花青染料，具有以下结构：其中R表示4-甲氧羰基苄基，X-表示酸阴离子，n表示1或2的整数。该花青染料适用于 用作可用作高密度光盘记录介质的λ= 450nm DIFFERENCE 650nm可见光吸收有机染料。

公开(公告)号：US20060099787A1

公开(公告)日：2006-05-11

申请号：US10983681

申请日：2004-11-09

Applicant: Jian-Hong Lin ,  Ying-Jen Kao ,  Jye-Yen Cheng

Inventor： Jian-Hong Lin ,  Ying-Jen Kao ,  Jye-Yen Cheng

IPC: H01L21/44

CPC classification number: H01L21/76808

Abstract: Methods for forming openings in damascene structures, such as dual damascene structures are provided, using plug materials having varied etching rates. In one embodiment, a semiconductor substrate is provided with a low-k material layer formed thereabove, the low-k material layer having an upper surface and at least one via opening formed therethrough. A first plug material layer is formed over the low-k material layer and filled in the via opening, the first plug material layer having a first etching rate. The first plug material layer is etched back to form a first plug partially filling the via opening. A second plug material layer is formed over the low-k material layer and the first plug. The second plug material layer is etched back to form a second plug partially below the upper surface of the low-k material layer, the second plug material layer having a second etching rate higher than the first etching rate.