公开(公告)号：US20130210172A1

公开(公告)日：2013-08-15

申请号：US13371046

申请日：2012-02-10

Applicant: Yuan-Hsuan Chen ,  Kei-Wei CHEN ,  Ying-Lang WANG ,  Kuo-Hsiu WEI

Inventor： Yuan-Hsuan Chen ,  Kei-Wei CHEN ,  Ying-Lang WANG ,  Kuo-Hsiu WEI

IPC: H01L21/66 ,  B24B49/00 ,  H01L21/306

CPC classification number: H01L21/30625 ,  B24B37/005 ,  B24B37/04 ,  B24B49/00 ,  B24B49/04 ,  B24B49/05 ,  H01L21/304 ,  H01L22/12 ,  H01L22/20

Abstract: A wafer thinning apparatus includes a first metrology tool configured to measure an initial thickness of the wafer. The wafer thinning apparatus further includes a controller connected to the first metrology tool, and configured to determine a polishing time based on the initial thickness, a predetermined thickness and a material removal rate. The wafer thinning apparatus further includes a polishing tool connected to the controller configured to polish the wafer for a period of time equal to the polishing time. The wafer thinning apparatus includes a second metrology tool connected to the controller and the polishing tool, and configured to measure a polished thickness. The controller is configured to update the material removal rate based on the polished thickness, the predetermined thickness and the polishing time.

Abstract translation: 晶片减薄装置包括被配置为测量晶片的初始厚度的第一计量工具。 晶片减薄装置还包括连接到第一计量工具的控制器，并且被配置为基于初始厚度，预定厚度和材料移除速率来确定抛光时间。 晶片减薄装置还包括连接到控制器的抛光工具，该抛光工具被配置成在等于抛光时间的时间内抛光晶片。 晶片减薄装置包括连接到控制器和抛光工具的第二计量工具，并且被配置为测量抛光厚度。 控制器被配置为基于抛光厚度，预定厚度和抛光时间更新材料去除速率。