公开(公告)号：US07540899B1

公开(公告)日：2009-06-02

申请号：US11420157

申请日：2006-05-24

Applicant: A David Johnson

Inventor： A David Johnson

IPC: C22B9/16 ,  C22B9/22

CPC classification number: C30B1/023 ,  A61L27/04 ,  A61L27/50 ,  A61L31/022 ,  A61L31/14 ,  A61L2400/16 ,  C21D2201/01 ,  C22B9/223 ,  C22C1/002 ,  C22C14/00 ,  C22C19/03 ,  C23C14/165 ,  C23C14/34 ,  C23C14/5806 ,  C30B29/52

Abstract: A method of forming a single crystal in a thin film by progressively rapidly heating (and cooling) a narrow band of amorphous material. The amorphous thin film may be of shape memory alloy such as TiNi or CuAlNi. Heating may be accomplished by a line-focused laser beam. The thin film may be formed by sputter deposition on a substrate such as silicon. The thin film crystal that is formed has non-isotropic stress/strain characteristics, and very large recoverable strain in a preferred direction. The single crystal SMA exhibits greater strain recovery; Constant force deflection; Wider transition temperature range; Very narrow loading hysteresis; and Recovery that is repeatable & complete. Single Crystal SMA is manufactured by pulling a single crystal from melt, a method similar to that used by the semiconductor industry to fabricate silicon boules. This process enables manufacture of materials that approach theoretical limits.

Abstract translation: 通过逐渐加热（和冷却）非晶材料的窄带来在薄膜中形成单晶的方法。 非晶态薄膜可以是诸如TiNi或CuAlNi的形状记忆合金。 加热可以通过线聚焦激光束实现。 薄膜可以通过溅射沉积在诸如硅的衬底上形成。 形成的薄膜晶体具有非各向同性的应力/应变特性，并且在优选方向上具有非常大的可恢复应变。 单晶SMA显示更大的应变恢复率; 恒力偏转; 更宽的转变温度范围; 非常窄的载荷滞后; 和恢复是可重复和完整的。 单晶SMA是通过从熔体中拉出单晶制造的，其类似于半导体工业用于制造硅晶粒的方法。 该过程可以制造接近理论极限的材料。