公开(公告)号：US10008827B2

公开(公告)日：2018-06-26

申请号：US15000975

申请日：2016-04-04

Applicant: Acorn Technologies, Inc.

Inventor： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC: H01S5/00 ,  H01S5/187 ,  H01L31/0352 ,  H01S5/22 ,  H01S5/32 ,  H01L33/34 ,  B82Y20/00 ,  H01L31/028 ,  H01L31/18 ,  H01S5/125 ,  H01S5/34 ,  H01L27/146 ,  H01S5/227

CPC classification number: H01S5/3201 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/187 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

公开(公告)号：US09270083B2

公开(公告)日：2016-02-23

申请号：US14698759

申请日：2015-04-28

Applicant: Acorn Technologies, Inc.

Inventor： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC: H01S5/00 ,  H01S5/187 ,  H01L31/0352 ,  H01S5/22 ,  H01S5/32 ,  H01L33/34 ,  B82Y20/00 ,  H01L31/028 ,  H01L31/18 ,  H01S5/125 ,  H01S5/34 ,  H01S5/227

CPC classification number: H01S5/187 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3201 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

公开(公告)号：US20150249320A1

公开(公告)日：2015-09-03

申请号：US14698759

申请日：2015-04-28

Applicant: Acorn Technologies, Inc.

Inventor： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC: H01S5/187 ,  H01S5/34 ,  H01S5/125 ,  H01S5/32 ,  H01S5/22

CPC classification number: H01S5/187 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3201 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract translation: 提供拉伸应变锗，其可以被充分应变以提供几乎直接的带隙材料或直接带隙材料。 与锗区接触的压应力或拉应力应力源材料在锗区域引起单轴或双轴拉伸应变。 应力材料可以包括氮化硅或硅锗。 所得到的应变锗结构可用于发射或检测光子，包括例如在谐振腔内产生光子以提供激光。

公开(公告)号：US20180062352A1

公开(公告)日：2018-03-01

申请号：US15800450

申请日：2017-11-01

Applicant: Acorn Technologies, Inc.

Inventor： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC: H01S5/187 ,  H01S5/34 ,  H01L27/146 ,  B82Y20/00 ,  H01S5/32 ,  H01S5/22 ,  H01S5/125 ,  H01L33/34 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/028 ,  H01S5/227

CPC classification number: H01S5/3201 ,  B82Y20/00 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1808 ,  H01L33/34 ,  H01S5/125 ,  H01S5/187 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/3223 ,  H01S5/3224 ,  H01S5/3427 ,  Y02E10/547

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

公开(公告)号：US20170250283A1

公开(公告)日：2017-08-31

申请号：US15594436

申请日：2017-05-12

Applicant: Acorn Technologies, Inc.

Inventor： Paul A. Clifton ,  R. Stockton Gaines

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L21/762

CPC classification number: H01L29/7849 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/7624 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76283 ,  H01L21/823412 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66477 ,  H01L29/66568 ,  H01L29/66742 ,  H01L29/7838 ,  H01L29/7846 ,  H01L29/78603

Abstract: An SOI wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (BOX) may be formed on a host wafer by forming silicon oxide, silicon nitride and silicon oxide layers so that the silicon nitride layer is compressively stressed. Wafer bonding provides the surface silicon layer over the stressed insulator layer. Preferred implementations of the invention form MOS transistors by etching isolation trenches into a preferred SOI substrate having a stressed BOX structure to define transistor active areas on the surface of the SOI substrate. Most preferably the trenches are formed deep enough to penetrate through the stressed BOX structure and some distance into the underlying silicon portion of the substrate. The overlying silicon active regions will have tensile stress induced due to elastic edge relaxation.

公开(公告)号：US20160163813A1

公开(公告)日：2016-06-09

申请号：US15043035

申请日：2016-02-12

Applicant: Acorn Technologies, Inc.

Inventor： Walter A. Harrison ,  Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC: H01L29/47

CPC classification number: H01L29/47 ,  H01L21/283 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/324 ,  H01L29/045 ,  H01L29/161 ,  H01L29/456

Abstract: Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal—group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.

Abstract translation: 通过在金属和半导体之间的界面处插入V族或III族原子的单层或者插入由每个单层的单层构成的双层来降低金属 - 半导体（IV族）结的特定接触电阻的技术， 或插入多个这样的双层。 所得到的低比电阻金属组IV半导体结可用作包括电子器件（例如，晶体管，二极管等）和光电器件（例如，激光器，太阳能电池，光电检测器等）的半导体器件中的低电阻电极， 和/或作为场效应晶体管（FET）中的金属源极和/或漏极区域（或其一部分）。 III族和V族原子的单层主要是在IV族半导体的表面上形成的化学键合到IV族半导体的表面原子上的原子的有序层。

公开(公告)号：US10727647B2

公开(公告)日：2020-07-28

申请号：US16213876

申请日：2018-12-07

Applicant: Acorn Technologies, Inc.

Inventor： Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/22 ,  H01S5/125 ,  H01S5/187 ,  H01S5/34 ,  H01S5/227

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

公开(公告)号：US20190006518A1

公开(公告)日：2019-01-03

申请号：US16105277

申请日：2018-08-20

Applicant: Acorn Technologies, Inc.

Inventor： Paul A. Clifton ,  R. Stockton Gaines

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/786 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/7849 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/7624 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76283 ,  H01L21/823412 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66477 ,  H01L29/66568 ,  H01L29/66742 ,  H01L29/7838 ,  H01L29/7846 ,  H01L29/78603

Abstract: An SOI wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (BOX) may be formed on a host wafer by forming silicon oxide, silicon nitride and silicon oxide layers so that the silicon nitride layer is compressively stressed. Wafer bonding provides the surface silicon layer over the stressed insulator layer. Preferred implementations of the invention form MOS transistors by etching isolation trenches into a preferred SOI substrate having a stressed BOX structure to define transistor active areas on the surface of the SOI substrate. Most preferably the trenches are formed deep enough to penetrate through the stressed BOX structure and some distance into the underlying silicon portion of the substrate. The overlying silicon active regions will have tensile stress induced due to elastic edge relaxation.

公开(公告)号：US10084091B2

公开(公告)日：2018-09-25

申请号：US15594436

申请日：2017-05-12

Applicant: Acorn Technologies, Inc.

Inventor： Paul A. Clifton ,  R. Stockton Gaines

IPC: H01L31/117 ,  H01L29/78 ,  H01L21/762 ,  H01L29/786 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/7849 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/7624 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76283 ,  H01L21/823412 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66477 ,  H01L29/66568 ,  H01L29/66742 ,  H01L29/7838 ,  H01L29/7846 ,  H01L29/78603

Abstract: An SOI wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (BOX) may be formed on a host wafer by forming silicon oxide, silicon nitride and silicon oxide layers so that the silicon nitride layer is compressively stressed. Wafer bonding provides the surface silicon layer over the stressed insulator layer. Preferred implementations of the invention form MOS transistors by etching isolation trenches into a preferred SOI substrate having a stressed BOX structure to define transistor active areas on the surface of the SOI substrate. Most preferably the trenches are formed deep enough to penetrate through the stressed BOX structure and some distance into the underlying silicon portion of the substrate. The overlying silicon active regions will have tensile stress induced due to elastic edge relaxation.

公开(公告)号：US20170373164A1

公开(公告)日：2017-12-28

申请号：US15684707

申请日：2017-08-23

Applicant: Acorn Technologies, Inc.

Inventor： Walter A. Harrison ,  Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC: H01L29/47 ,  H01L29/161 ,  H01L21/324 ,  H01L21/283 ,  H01L21/285 ,  H01L29/45 ,  H01L29/04

CPC classification number: H01L29/47 ,  H01L21/283 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/324 ,  H01L29/045 ,  H01L29/161 ,  H01L29/456

Abstract: Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.