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    MIS contact structure with metal oxide conductor
    1.
    发明授权
    MIS contact structure with metal oxide conductor 有权

    公开(公告)号：US10147798B2

    公开(公告)日：2018-12-04

    申请号：US15451164

    申请日：2017-03-06

    Applicant: Acorn Technologies, Inc.

    Inventor： Paul A. Clifton ,  Andreas Goebel

    IPC: H01L29/49 ,  H01L29/36 ,  H01L29/51 ,  H01L21/28 ,  H01L29/66 ,  H01L29/08

    Abstract: An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10−5-10−7 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×1019 cm−3 and less than approximately 10−8 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 1020 cm−3.

    MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
    3.
    发明申请
    MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR 审中-公开

    公开(公告)号：US20180083115A1

    公开(公告)日：2018-03-22

    申请号：US15451164

    申请日：2017-03-06

    Applicant: Acorn Technologies, Inc.

    Inventor： Paul A. Clifton ,  Andreas Goebel

    IPC: H01L29/49 ,  H01L21/28 ,  H01L29/36 ,  H01L29/51

    CPC classification number: H01L29/4966 ,  H01L21/28017 ,  H01L29/0895 ,  H01L29/36 ,  H01L29/517 ,  H01L29/66643

    Abstract: An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10−5-10−7 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×1019 cm−3 and less than approximately 10−8 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 1020 cm−3.

    MIS contact structure with metal oxide conductor
    7.
    发明授权
    MIS contact structure with metal oxide conductor 有权

    公开(公告)号：US10553695B2

    公开(公告)日：2020-02-04

    申请号：US16175637

    申请日：2018-10-30

    Applicant: Acorn Technologies, Inc.

    Inventor： Paul A. Clifton ,  Andreas Goebel

    IPC: H01L29/36 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/08 ,  H01L21/28

    Abstract: An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10−5-10−7 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×1019 cm−3 and less than approximately 10−8 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 1020 cm−3.

    Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
    9.
    发明授权
    Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers 有权
    通过插入界面原子单层与IV族半导体的金属接触

    公开(公告)号：US09362376B2

    公开(公告)日：2016-06-07

    申请号：US14360473

    申请日：2012-10-18

    Applicant: ACORN TECHNOLOGIES, INC.

    Inventor： Walter A Harrison ,  Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

    IPC: H01L29/45 ,  H01L21/285 ,  H01L29/04 ,  H01L21/283

    CPC classification number: H01L29/47 ,  H01L21/283 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/324 ,  H01L29/045 ,  H01L29/161 ,  H01L29/456

    Abstract: Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.

    Abstract translation: 通过在金属和半导体之间的界面处插入V族或III族原子的单层或者插入由每个单层单层制成的双层来降低金属 - 半导体（IV族）结的特定接触电阻的技术， 或插入多个这样的双层。 所得到的低比电阻金属组IV半导体结可用作包括电子器件（例如，晶体管，二极管等）和光电器件（例如，激光器，太阳能电池，光电检测器等）的半导体器件中的低电阻电极， 和/或作为场效应晶体管（FET）中的金属源极和/或漏极区域（或其一部分）。 III族和V族原子的单层主要是在IV族半导体的表面上形成的化学键合到IV族半导体的表面原子上的原子的有序层。

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