公开(公告)号：US20140299232A1

公开(公告)日：2014-10-09

申请号：US14118565

申请日：2012-05-21

Applicant: ADAPTIVE MATERIALS TECHNOLOGY - ADAPTAMATOY

Inventor： Yossef Ezer ,  Oleksii Sozinov ,  Ladislav Straka ,  Aleksandr Soroka ,  Nataliya Lanska

IPC: H01F1/03 ,  C22C30/00 ,  H01F41/02

CPC classification number: H01F1/03 ,  B32B15/01 ,  C21D2201/01 ,  C21D2201/05 ,  C21D2211/001 ,  C21D2211/008 ,  C22C1/00 ,  C22C19/03 ,  C22C30/00 ,  C22F1/006 ,  C22F1/10 ,  H01F1/0308 ,  H01F41/02

Abstract: The present technology relates to a Ni—Mn—Ga magnetic shape memory (MSM) alloy including twin boundaries type 2, which are deviated approximately +/−2-4 degrees from (101) or equivalent crystallographic plane by rotation about [−101] or equivalent crystallographic direction. This technology relates also to an actuator, sensor and harvester including MSM element of this technology.

Abstract translation: 本技术涉及包括双边界2型的Ni-Mn-Ga磁形状记忆（MSM）合金，其从（101）或相当的晶面垂直偏离大约+/- 2-4度，旋转约[-101] 或等效晶体方向。 该技术还涉及包括该技术的MSM元件的致动器，传感器和收割机。