ETCHING LIQUID COMPOSITION AND ETCHING METHOD

    公开(公告)号:US20200010762A1

    公开(公告)日:2020-01-09

    申请号:US16572842

    申请日:2019-09-17

    Abstract: An etching method that includes using the etching liquid composition containing (A) 0.1 to 15 mass % of hydrogen peroxide, (B) 0.01 to 1 mass % of a fluoride ion source, (C) 2-hydroxyethane sulfonic acid or a salt thereof in an amount of 0.1 to 20 mass % in terms of organic sulfonic acid, (D) 0.01 to 5 mass % of at least one compound selected from the group consisting of azole-based compounds and compounds having a structure that has a 6-membered heterocycle including at least one nitrogen atom and three double bonds, and (E) water, is provided.

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