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    MOLYBDENUM IMIDE COMPOUND
    1.
    发明申请
    MOLYBDENUM IMIDE COMPOUND 审中-公开

    公开(公告)号：US20170253625A1

    公开(公告)日：2017-09-07

    申请号：US15598450

    申请日：2017-05-18

    Applicant: ADEKA CORPORATION

    Inventor： Hiroki SATO ,  Junji UEYAMA

    IPC: C07F17/00 ,  C23C16/40 ,  C07F11/00 ,  C23C16/44 ,  C23C16/18 ,  C23C16/455

    CPC classification number: C07F17/00 ,  C07F11/00 ,  C23C16/18 ,  C23C16/405 ,  C23C16/44 ,  C23C16/45525

    Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.)

    RAW MATERIAL FOR FORMING THIN FILM, AND METHOD FOR MANUFACTURING THIN FILM
    2.
    发明申请
    RAW MATERIAL FOR FORMING THIN FILM, AND METHOD FOR MANUFACTURING THIN FILM 审中-公开

    公开(公告)号：US20190292663A1

    公开(公告)日：2019-09-26

    申请号：US16302895

    申请日：2017-02-27

    Applicant: ADEKA CORPORATION

    Inventor： Hiroki SATO ,  Naoki YAMADA ,  Tsubasa SHIRATORI ,  Haruyoshi SATO

    IPC: C23C16/455 ,  C23C16/40

    Abstract: A raw material for forming a thin film that includes a compound represented by General Formula (1) below. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms; R2 to R5 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms; A represents an alkanediyl group having 1 to 4 carbon atoms; and M represents titanium, zirconium or hafnium. Provided that when M represents zirconium, A represents an alkanediyl group having 3 or 4 carbon atoms. When M represents titanium or hafnium, it is preferred that A represents an alkanediyl group having 2 or 3 carbon atoms. When M represents zirconium, it is preferred that A represent an alkanediyl group having 3 carbon atoms.

    METHOD FOR MANUFACTURING MOLYBDENUM OXIDE-CONTAINING THIN FILM
    4.
    发明申请
    METHOD FOR MANUFACTURING MOLYBDENUM OXIDE-CONTAINING THIN FILM 有权
    制造含氧化钼薄膜的方法

    公开(公告)号：US20150371859A1

    公开(公告)日：2015-12-24

    申请号：US14823293

    申请日：2015-08-11

    Applicant: ADEKA CORPORATION

    Inventor： Hiroki SATO ,  Junji UEYAMA

    IPC: H01L21/28 ,  H01L29/51 ,  H01L29/49 ,  H01L21/285 ,  H01L21/768

    CPC classification number: H01L21/28194 ,  C07F11/005 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/76841 ,  H01L29/4966 ,  H01L29/517 ,  Y02E10/541 ,  Y02P70/521

    Abstract: Disclosed is a method for manufacturing a molybdenum oxide-containing thin film, involving vaporizing a starting material for forming a thin film containing a compound represented by the following general formula (I) to give vapor containing a molybdenum amide compound, introducing the obtained vapor onto a substrate, and further introducing an oxidizing gas to cause decomposition and/or a chemical reaction to form a thin film on the substrate. In the formula, R1 and R2 each represents a straight or branched alkyl group having 1 to 4 carbon atom(s), R3 represents a t-butyl group or a t-amyl group, y represents 0 or 2, x is 4 when y is 0, or x is 2 when y is 2, wherein R1 and R2 that are plurally present may be the same or different.

    Abstract translation: 公开了一种含有氧化钼的薄膜的制造方法，其中，将含有下述通式（I）表示的化合物的薄膜形成原料汽化，得到含有钼酰胺化合物的蒸气，将得到的蒸气导入到 并且进一步引入氧化气体以引起分解和/或化学反应以在衬底上形成薄膜。 式中，R 1，R 2分别表示碳原子数为1〜4的直链或支链烷基，R 3表示叔丁基或叔戊基，y表示0或2，y表示y 当y为2时，x为2，或者多个存在的R 1和R 2可以相同或不同。

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