ETCHING METHOD
    1.
    发明公开
    ETCHING METHOD 审中-公开

    公开(公告)号:US20240030037A1

    公开(公告)日:2024-01-25

    申请号:US18023158

    申请日:2021-08-23

    CPC classification number: H01L21/31122

    Abstract: Provided is a method of etching a metal oxide film in a laminate including a substrate and the metal oxide film formed on a surface thereof by an atomic layer etching method, the method including: a first step of introducing, into a treatment atmosphere storing the laminate, at least one oxidizable compound selected from the group consisting of: an alcohol compound; an aldehyde compound; and an ester compound; and a second step of introducing an oxidizing gas into the treatment atmosphere after the first step.

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