公开(公告)号：US10731973B2

公开(公告)日：2020-08-04

申请号：US16319322

申请日：2014-08-19

Applicant: AK OPTICS TECHNOLOGY CO., LTD.

Inventor： Jianpeng Liu ,  Tang Zhang ,  Chengmin Li

IPC: G01B11/245 ,  G01N21/956 ,  G01B11/255 ,  H01L21/66 ,  G01N21/95 ,  H01L33/00 ,  H01L33/20

Abstract: A device for detecting a two-dimensional morphology of a wafer substrate in real time. The device comprises: a first calculation module, a second calculation module and an analysis module, wherein the first calculation module calculates the curvature CX between any two points of incidence on the wafer substrate in an X direction of a substrate to be detected according to position signals of N light spots; the second calculation module calculates the curvature CY at any one point of incidence on the wafer substrate in a moving direction, i.e. a Y direction, of the substrate to be detected according to the position signals of N light spots. The device can be adapted to a sapphire substrate on a graphite disc which rotates at a high speed.

公开(公告)号：US10957564B2

公开(公告)日：2021-03-23

申请号：US16319323

申请日：2014-08-19

Applicant: AK OPTICS TECHNOLOGY CO., LTD.

Inventor： Chengmin Li ,  Dong Yan ,  Linzi Wang ,  Jianpeng Liu ,  Hongda Jiao ,  Tang Zhang ,  Xiaochao Ma

IPC: C30B25/10 ,  H01L21/67 ,  G01J5/08 ,  G01J5/00 ,  G01J5/60

Abstract: A self-calibration apparatus and method for a real-time temperature measurement system of a MOCVD device belong to the technical field of semiconductor manufacturing. The apparatus comprises a MOCVD reactor chamber (1) and an optical detector (6). The MOCVD reactor chamber (1) comprises an epitaxial wafer (4). A detection window (5) is provided on the top of the MOCVD reactor chamber (1). The optical detector (6) emits detection light beams whose wavelengths are respectively λ1 and λ2 toward the epitaxial wafer (4) through the detection window (5). The detection light beams are reflected by the epitaxial wafer (4) to form reflected light beams which are detected by the optical detector (6). In the method, points corresponding to the actual thermal radiation ratios are depicted on the theoretical thermal radiation ratio-temperature curve according to actual thermal radiation ratios, and values of the temperatures T corresponding to the points are substituted into formulas to obtain m1 and m2 respectively. With the method and apparatus, self-calibration of the real-time temperature measurement system of a MOCVD device is realized, thus ensuring consistent and accurate measurements of a growth temperature of the epitaxial wafer.

公开(公告)号：US10908024B2

公开(公告)日：2021-02-02

申请号：US16317024

申请日：2014-08-19

Applicant: AK OPTICS TECHNOLOGY CO., LTD.

Inventor： Dong Yan ,  Chengmin Li ,  Linzi Wang ,  Jianpeng Liu ,  Longmao Ye

IPC: G01J5/00 ,  G01J5/08 ,  G01J5/52 ,  G01J5/58

Abstract: An apparatus and a method for online and real-time detection of a temperature of an epitaxial wafer (4) belong to the technical field of semiconductor detection. The apparatus comprises a MOCVD reaction chamber (1), a light source (6), a beam splitter (7), a reference light detector (8), a reflected light detector (9) and a data acquisition unit (10). The method, on the basis of the apparatus, can obtain a thermal radiation attenuation factor caused by a coating of a reactor chamber window and a reflectance attenuation factor caused by the coating of the reactor chamber window for the epitaxial wafer (4). The apparatus and method can eliminate influence of the coating of the reactor chamber window on an online and real-time temperature detection value, thereby improving the accuracy of the online and real-time temperature detection value.