PROTECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

    公开(公告)号:US20230361109A1

    公开(公告)日:2023-11-09

    申请号:US18356661

    申请日:2023-07-21

    CPC classification number: H01L27/027 H01L27/0288 H01L27/0629

    Abstract: A first gate drive outputs a first drive voltage to turn a first transistor on upon occurrence of a condition in which a voltage at a supply terminal is higher than a voltage at a ground terminal, the output first drive voltage being higher than the voltage at the ground terminal. A second gate drive outputs a second drive voltage to turn a second transistor on, upon occurrence of a condition in which the voltage at the supply terminal is lower than the voltage at the ground terminal, the output second drive voltage being higher than the voltage at the supply terminal.

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