System and process for measuring strain in materials at high spatial resolution
    1.
    发明授权
    System and process for measuring strain in materials at high spatial resolution 有权
    用于在高空间分辨率下测量材料应变的系统和过程

    公开(公告)号:US09274070B2

    公开(公告)日:2016-03-01

    申请号:US14383713

    申请日:2013-03-08

    Applicant: APPFIVE, LLC

    Abstract: A process for measuring strain is provided that includes placing a sample of a material into a TEM as a sample. The TEM is energized to create a small electron beam with an incident angle to the sample. Electrical signals are generated that control multiple beam deflection coils and image deflection coils of the TEM. The beam deflection control signals cause the angle of the incident beam to change in a cyclic time-dependent manner. A first diffraction pattern from the sample material that shows dynamical diffraction effects is observed and then one or more of the beam deflection coil control signals are adjusted to reduce the dynamical diffraction effects. One or more of the image deflection coil control signals are then adjusted to remove any motion of the diffraction pattern. A diffraction pattern is then collected from a strained area of the material after the adjusting step, and the strain is then determined from a numerical analysis of the strained diffraction pattern compared to a reference diffraction pattern from an unstained area of the material.

    Abstract translation: 提供了一种测量应变的方法,包括将材料样品放置在TEM中作为样品。 TEM被激励以产生具有与样品的入射角的小电子束。 产生控制TEM的多个光束偏转线圈和图像偏转线圈的电信号。 光束偏转控制信号使入射光束的角度以循环时间依赖的方式变化。 观察到来自示出动态衍射效应的样品材料的第一衍射图案,然后调整一个或多个光束偏转线圈控制信号以减少动态衍射效应。 然后调整一个或多个图像偏转线圈控制信号以去除衍射图案的任何运动。 然后在调整步骤之后从材料的应变区域收集衍射图案,然后根据与材料的未染色区域的参考衍射图案的应变衍射图案的数值分析来确定应变。

    SYSTEM AND PROCESS FOR MEASURING STRAIN IN MATERIALS AT HIGH SPATIAL RESOLUTION
    2.
    发明申请
    SYSTEM AND PROCESS FOR MEASURING STRAIN IN MATERIALS AT HIGH SPATIAL RESOLUTION 有权
    用于在高空间分辨率下测量材料中的应变的系统和方法

    公开(公告)号:US20150076346A1

    公开(公告)日:2015-03-19

    申请号:US14383713

    申请日:2013-03-08

    Applicant: APPFIVE, LLC

    Abstract: A process for measuring strain is provided that includes placing a sample of a material into a TEM as a sample. The TEM is energized to create a small electron beam with an incident angle to the sample. Electrical signals are generated that control multiple beam deflection coils and image deflection coils of the TEM. The beam deflection control signals cause the angle of the incident beam to change in a cyclic time-dependent manner. A first diffraction pattern from the sample material that shows dynamical diffraction effects is observed and then one or more of the beam deflection coil control signals are adjusted to reduce the dynamical diffraction effects. One or more of the image deflection coil control signals are then adjusted to remove any motion of the diffraction pattern. A diffraction pattern is then collected from a strained area of the material after the adjusting step, and the strain is then determined from a numerical analysis of the strained diffraction pattern compared to a reference diffraction pattern from an unstained area of the material.

    Abstract translation: 提供了一种测量应变的方法,包括将材料样品放置在TEM中作为样品。 TEM被激励以产生具有与样品的入射角的小电子束。 产生控制TEM的多个光束偏转线圈和图像偏转线圈的电信号。 光束偏转控制信号使入射光束的角度以循环时间依赖的方式变化。 观察到来自示出动态衍射效应的样品材料的第一衍射图案,然后调整一个或多个光束偏转线圈控制信号以减少动态衍射效应。 然后调整一个或多个图像偏转线圈控制信号以去除衍射图案的任何运动。 然后在调整步骤之后从材料的应变区域收集衍射图案,然后根据与材料的未染色区域的参考衍射图案的应变衍射图案的数值分析来确定应变。

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