-
公开(公告)号:US20240420975A1
公开(公告)日:2024-12-19
申请号:US18821843
申请日:2024-08-30
Applicant: APPLIED MATERIALS, INC.
Inventor: Varoujan Chakarian , Blake W Erickson
Abstract: The disclosure describes apparatus and method for detecting an endpoint in plasma-assisted wafer processing in a chamber. A fiber array comprising a plurality of fibers collects optical emission light from the chamber during the plasma-assisted wafer processing. The fiber array is split into two or more sub-arrays of fibers, each group carrying a portion of the light to a segment of a photodetector. Each segment of photodetector has a corresponding narrowband optical filter designed for a specific range of wavelengths. A computer processor analyzes detected signals from the plurality of segments of the photodetector, and determines, based on the analysis of the detected signals, an endpoint of the plasma-assisted wafer processing as indicated by the presence or the absence of the one or more chemical species in the chamber. The photodetector can be based on photomultiplier tubes (PMT), specifically multi-anode PMT.
-
公开(公告)号:US12080574B2
公开(公告)日:2024-09-03
申请号:US16932630
申请日:2020-07-17
Applicant: APPLIED MATERIALS, INC.
Inventor: Varoujan Chakarian , Blake W Erickson
CPC classification number: H01L21/67253 , G01J3/0218 , G01J3/32 , G01J3/36 , G01N33/0009 , H01J37/32963 , H01J37/32972 , H01J37/32981 , H01L22/26 , H01J2237/2445
Abstract: The disclosure describes apparatus and method for detecting an endpoint in plasma-assisted wafer processing in a chamber. A fiber array comprising a plurality of fibers collects optical emission light from the chamber during the plasma-assisted wafer processing. The fiber array is split into two or more groups of fibers, each group carrying a portion of the light to a segment of a photodetector. Each segment of photodetector has a corresponding narrowband optical filter designed for a specific range of wavelengths. A computer processor analyzes detected signals from the plurality of segments of the photodetector, and determines, based on the analysis of the detected signals, an endpoint of the plasma-assisted wafer processing as indicated by the presence or the absence of the one or more chemical species in the chamber. The photodetector can be based on photomultiplier tube (PMT) array or based on photodiodes (e.g., avalanche photodiodes (APDs)).
-