公开(公告)号：US09159574B2

公开(公告)日：2015-10-13

申请号：US13973541

申请日：2013-08-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Keven Yu ,  Ajay Kumar

IPC: H01L21/3065 ,  H01L21/311 ,  B81C1/00 ,  H01L21/768

CPC classification number: H01L21/3065 ,  B81C1/00619 ,  H01L21/30655 ,  H01L21/31138 ,  H01L21/76898

Abstract: Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of the trench, the trench having a protective layer formed by plasma generated by a second process gas such as oxygen or a polymerization gas. In another embodiment, a method involves etching a semiconductor wafer to generate a trench having a smooth sidewall. The method includes plasma etching the semiconductor wafer with one or more first process gases including a fluorine gas, simultaneously performing deposition and plasma etching the semiconductor wafer with one or more second process gases including a fluorine gas and a polymerization gas mix, and performing deposition with one or more third process gases including a polymerization gas.

Abstract translation: 描述了用于沟槽侧壁平滑化的硅蚀刻方法。 在一个实施例中，一种方法包括通过等离子体蚀刻来平滑在半导体晶片中形成的沟槽的侧壁。 该方法包括使用氟气产生的等离子体对半导体晶片进行定向蚀刻，以平滑沟槽的侧壁，该沟槽具有由诸如氧气或聚合气体的第二工艺气体产生的等离子体形成的保护层。 在另一个实施例中，一种方法包括蚀刻半导体晶片以产生具有平滑侧壁的沟槽。 该方法包括使用一种或多种包括氟气的第一工艺气体对半导体晶片进行等离子体蚀刻，同时用包含氟气和聚合气体混合物的一种或多种第二工艺气体进行沉积和等离子体蚀刻半导体晶片，并且 一种或多种第三工艺气体，包括聚合气体。